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CAT25640VI-G

ESD Suppressors / TVS Diodes SOT-23 7V 600W Low Capacitance

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厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

器件标准:

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
ON Semiconductor(安森美)
零件包装代码
SOIC
包装说明
0.150 INCH, GREEN, MS-012, SOIC-8
针数
8
制造商包装代码
751BD
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
20 weeks
最大时钟频率 (fCLK)
10 MHz
数据保留时间-最小值
100
耐久性
1000000 Write/Erase Cycles
JESD-30 代码
R-PDSO-G8
JESD-609代码
e4
长度
4.9 mm
内存密度
65536 bit
内存集成电路类型
EEPROM
内存宽度
8
湿度敏感等级
1
功能数量
1
端子数量
8
字数
8192 words
字数代码
8000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
8KX8
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
并行/串行
SERIAL
峰值回流温度(摄氏度)
260
电源
2/5 V
认证状态
Not Qualified
座面最大高度
1.75 mm
串行总线类型
SPI
最大待机电流
0.000001 A
最大压摆率
0.003 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
1.8 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
宽度
3.9 mm
最长写入周期时间 (tWC)
5 ms
写保护
HARDWARE/SOFTWARE
参考设计
展开全部 ↓
文档预览
CAT25640
64-Kb SPI Serial CMOS
EEPROM
Description
The CAT25640 is a 64−Kb Serial CMOS EEPROM device
internally organized as 8Kx8 bits. This features a 64−byte page write
buffer and supports the Serial Peripheral Interface (SPI) protocol. The
device is enabled through a Chip Select (CS) input. In addition, the
required bus signals are clock input (SCK), data input (SI) and data
output (SO) lines. The HOLD input may be used to pause any serial
communication with the CAT25640 device. The device features
software and hardware write protection, including partial as well as
full array protection.
Features
http://onsemi.com
SOIC−8
V SUFFIX
CASE 751BD
UDFN−8*
HU3 SUFFIX
CASE 517AX
TDFN−8*
VP2 SUFFIX
CASE 511AK
20 MHz (5 V) SPI Compatible
1.8 V to 5.5 V Supply Voltage Range
SPI Modes (0,0) & (1,1)
64−byte Page Write Buffer
Self−timed Write Cycle
Hardware and Software Protection
Block Write Protection
Protect
1
/
4
,
1
/
2
or Entire EEPROM Array
Low Power CMOS Technology
1,000,000 Program/Erase Cycles
100 Year Data Retention
Industrial and Extended Temperature Range
PDIP, SOIC, TSSOP 8−lead, TDFN and UDFN 8−pad Packages
This Device is Pb−Free, Halogen Free/BFR Free, and RoHS
Compliant
V
CC
PDIP−8
L SUFFIX
CASE 646AA
UDFN−8
HU4 SUFFIX
CASE 517AZ
TSSOP−8
Y SUFFIX
CASE 948AL
PIN CONFIGURATION
CS
SO
WP
V
SS
1
V
CC
HOLD
SCK
SI
PDIP (L), SOIC (V), TSSOP (Y),
TDFN* (VP2), UDFN* (HU3), UDFN (HU4)
* Not recommended for new designs
PIN FUNCTION
SI
CS
WP
HOLD
SCK
V
SS
CAT25640
SO
Pin Name
CS
SO
WP
V
SS
SI
SCK
HOLD
V
CC
Function
Chip Select
Serial Data Output
Write Protect
Ground
Serial Data Input
Serial Clock
Hold Transmission Input
Power Supply
Figure 1. Functional Symbol
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 19 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
May, 2012
Rev. 10
1
Publication Order Number:
CAT25640/D
CAT25640
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Operating Temperature
Storage Temperature
Voltage on any Pin with Respect to Ground (Note 1)
Ratings
−45
to +130
−65
to +150
−0.5
to +6.5
Units
°C
°C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than
−0.5
V or higher than V
CC
+ 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than
−1.5
V or overshoot to no more than V
CC
+ 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS
(Note 2)
Symbol
N
END
(Note 3)
T
DR
Endurance
Data Retention
Parameter
Min
1,000,000
100
Units
Program / Erase Cycles
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, V
CC
= 5 V, 25°C.
Table 3. D.C. OPERATING CHARACTERISTICS
Symbol
I
CCR
I
CCW
I
SB1
I
SB2
I
L
I
LO
V
IL
V
IH
V
OL1
V
OH1
V
OL2
V
OH2
Parameter
Supply Current
(Read Mode)
Supply Current
(Write Mode)
Standby Current
(
V
CC
= 1.8 V to 5.5 V, T
A
=
−40°C
to +85°C and V
CC
= 2.5 V to 5.5 V, T
A
=
−40°C
to +125°C, unless otherwise specified.)
Test Conditions
Read, V
CC
= 5.5 V,
SO open
Write, V
CC
= 5.5 V,
SO open
V
IN
= GND or V
CC
, CS = V
CC
,
WP = V
CC
, V
CC
= 5.5 V
V
IN
= GND or V
CC
, CS = V
CC
,
WP = GND, V
CC
= 5.5 V
V
IN
= GND or V
CC
CS = V
CC
,
V
OUT
= GND or V
CC
T
A
=
−40°C
to +85°C
T
A
=
−40°C
to +125°C
10 MHz /
−40°C
to 85°C
5 MHz /
−40°C
to 125°C
10 MHz /
−40°C
to 85°C
5 MHz /
−40°C
to 125°C
T
A
=
−40°C
to +85°C
T
A
=
−40°C
to +125°C
T
A
=
−40°C
to +85°C
T
A
=
−40°C
to +125°C
−2
−1
−1
−0.5
0.7 V
CC
V
CC
2.5 V, I
OL
= 3.0 mA
V
CC
2.5 V, I
OH
=
−1.6
mA
V
CC
< 2.5 V, I
OL
= 150
mA
V
CC
< 2.5 V, I
OH
=
−100
mA
V
CC
0.2 V
V
CC
0.8 V
0.2
Min
Max
2
2
3
3
1
2
3
5
2
1
2
0.3 V
CC
V
CC
+ 0.5
0.4
V
V
V
V
V
V
mA
mA
mA
mA
mA
Units
mA
Standby Current
Input Leakage Current
Output Leakage
Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
http://onsemi.com
2
CAT25640
Table 4. D.C. OPERATING CHARACTERISTICS
NEW PRODUCT (Rev F)
Symbol
I
CCR
Parameter
Supply Current
(Read Mode)
Read, SO open /
−40°C
to +85°C
Test Conditions
V
CC
= 1.8 V, f
SCK
= 5 MHz
V
CC
= 2.5 V, f
SCK
=10 MHz
V
CC
= 5.5 V, f
SCK
= 20 MHz
Read, SO open /
−40°C
to +125°C
I
CCW
Supply Current
(Write Mode)
Write, CS = V
CC
/
−40°C
to +85°C
2.5 V< V
CC
< 5.5 V,
f
SCK
= 10 MHz
V
CC
= 1.8 V
V
CC
= 2.5 V
V
CC
= 5.5 V
Write, CS = V
CC
/
−40°C
to +125°C
I
SB1
Standby Current
V
IN
= GND or V
CC
,
CS = V
CC
, WP = V
CC
,
V
CC
= 5.5 V
V
IN
= GND or V
CC
,
CS = V
CC
, WP = GND,
V
CC
= 5.5 V
V
IN
= GND or V
CC
CS = V
CC
V
OUT
= GND or V
CC
T
A
=
−40°C
to +85°C
T
A
=
−40°C
to +125°C
2.5 V< V
CC
< 5.5 V
T
A
=
−40°C
to +85°C
T
A
=
−40°C
to +125°C
T
A
=
−40°C
to +85°C
T
A
=
−40°C
to +125°C
−2
−1
−1
−0.5
0.7 V
CC
V
CC
> 2.5 V, I
OL
= 3.0 mA
V
CC
> 2.5 V, I
OH
=
−1.6
mA
V
CC
< 2.5 V, I
OL
= 150
mA
V
CC
< 2.5 V, I
OH
=
−100
mA
V
CC
0.2 V
V
CC
0.8 V
0.2
(
V
CC
= 1.8 V to 5.5 V, T
A
=
−40°C
to +85°C and V
CC
= 2.5 V to 5.5 V, T
A
=
−40°C
to +125°C, unless otherwise specified.)
Min
Max
0.2
0.3
0.6
0.6
0.8
1.4
2
2
1
3
3
5
2
1
2
0.3 V
CC
V
CC
+ 0.5
0.4
V
V
V
V
V
V
mA
mA
mA
mA
mA
Units
mA
I
SB2
Standby Current
I
L
I
LO
V
IL
V
IH
V
OL1
V
OH1
V
OL2
V
OH2
Input Leakage Current
Output Leakage
Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
Table 5. PIN CAPACITANCE
(Note 4) (T
A
= 25°C, f = 1.0 MHz, V
CC
= +5.0 V)
Symbol
C
OUT
C
IN
Output Capacitance (SO)
Input Capacitance (CS, SCK, SI, WP, HOLD)
Test
Conditions
V
OUT
= 0 V
V
IN
= 0 V
Min
Typ
Max
8
8
Units
pF
pF
4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
http://onsemi.com
3
CAT25640
Table 6. A.C. CHARACTERISTICS
MATURE PRODUCT
(T
A
=
−40°C
to +85°C (Industrial) and T
A
=
−40°C
to +125°C (Extended).) (Notes 5, 8)
V
CC
= 1.8 V
5.5 V /
−405C
to +855C
V
CC
= 2.5 V
5.5 V /
−405C
to +1255C
Symbol
f
SCK
t
SU
t
H
t
WH
t
WL
t
LZ
t
RI
(Note 6)
t
FI
(Note 6)
t
HD
t
CD
t
V
t
HO
t
DIS
t
HZ
t
CS
t
CSS
t
CSH
(Note 8)
t
CNS
t
CNH
t
WPS
t
WPH
t
WC
(Note 7)
Parameter
Clock Frequency
Data Setup Time
Data Hold Time
SCK High Time
SCK Low Time
HOLD to Output Low Z
Input Rise Time
Input Fall Time
HOLD Setup Time
HOLD Hold Time
Output Valid from Clock Low
Output Hold Time
Output Disable Time
HOLD to Output High Z
CS High Time
CS Setup Time
CS Hold Time
CS Interactive Setup Time
CS Interactive Hold Time
WP Setup Time
WP Hold Time
Write Cycle Time
50
20
30
20
20
10
100
5
0
50
100
20
15
20
15
15
10
60
5
0
10
75
0
20
25
Min
DC
40
40
75
75
50
2
2
0
10
40
Max
5
V
CC
= 2.5 V
5.5 V
−405C
to +855C
Min
DC
20
20
40
40
25
2
2
Max
10
Units
MHz
ns
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
5. AC Test Conditions:
Input Pulse Voltages: 0.3 V
CC
to 0.7 V
CC
Input rise and fall times:
10 ns
Input and output reference voltages: 0.5 V
CC
Output load: current source I
OL max
/I
OH max
; C
L
= 50 pF
6. This parameter is tested initially and after a design or process change that affects the parameter.
7. t
WC
is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle.
8.
All Chip Select (CS) timing parameters are defined relative to the positive clock edge (Figure 2). t
CSH
timing specification is valid
for die revision E and higher. The die revision E is identified by letter “E” or a dedicated marking code on top of the package. For
previous product revision (Rev. D) the t
CSH
is defined relative to the negative clock edge.
http://onsemi.com
4
CAT25640
Table 7. A.C. CHARACTERISTICS – NEW PRODUCT (Rev F)
(V
CC
= 1.8 V to 5.5 V, T
A
=
−40°C
to +85°C (Industrial) and
V
CC
= 2.5 V to 5.5 V, T
A
=
−40°C
to +125°C, unless otherwise specified.) (Note 9)
V
CC
= 1.8 V
5.5 V
−405C
to +855C
Symbol
f
SCK
t
SU
t
H
t
WH
t
WL
t
LZ
t
RI
(Note 10)
t
FI
(Note 10)
t
HD
t
CD
t
V
t
HO
t
DIS
t
HZ
t
CS
t
CSS
t
CSH
t
CNS
t
CNH
t
WPS
t
WPH
t
WC
(Note 11)
Parameter
Clock Frequency
Data Setup Time
Data Hold Time
SCK High Time
SCK Low Time
HOLD to Output Low Z
Input Rise Time
Input Fall Time
HOLD Setup Time
HOLD Hold Time
Output Valid from Clock Low
Output Hold Time
Output Disable Time
HOLD to Output High Z
CS High Time
CS Setup Time
CS Hold Time
CS Inactive Setup Time
CS Inactive Hold Time
WP Setup Time
WP Hold Time
Write Cycle Time
80
30
30
20
20
10
10
5
0
50
100
40
30
30
20
20
10
10
5
0
10
70
0
20
25
20
15
20
15
15
10
10
5
Min
DC
20
20
75
75
50
2
2
0
10
35
0
20
25
Max
5
V
CC
= 2.5 V
5.5 V
−405C
to +1255C
Min
DC
10
10
40
40
25
2
2
0
5
20
Max
10
V
CC
= 4.5 V
5.5 V
−405C
to +855C
Min
DC
5
5
20
20
25
2
2
Max
20
Units
MHz
ns
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
9. AC Test Conditions:
Input Pulse Voltages: 0.3 V
CC
to 0.7 V
CC
Input rise and fall times:
10 ns
Input and output reference voltages: 0.5 V
CC
Output load: current source I
OL max
/I
OH max
; C
L
= 30 pF
10. This parameter is tested initially and after a design or process change that affects the parameter.
11. t
WC
is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle.
Table 8. POWER−UP TIMING
(Notes 10, 12)
Symbol
t
PUR
t
PUW
Power−up to Read Operation
Power−up to Write Operation
Parameter
Max
1
1
Units
ms
ms
12. t
PUR
and t
PUW
are the delays required from the time V
CC
is stable until the specified operation can be initiated.
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