Preliminary Information
CAT660
100mA CMOS Charge Pump Inverter/Doubler
FEATURES
s
Replaces MAX660 and LTC®660
s
Converts V+ to V- or V+ to 2V+
s
Low output resistance, 10Ω max
s
High power efficiency
s
Selectable charge pump frequency
s
Low quiescent current
H
GEN
FR
ALO
EE
LE
A
D
F
R
E
E
TM
s
Pin-compatible, high-current alternative to 7660/1044
s
Commercial & extended industrial temperature
s
Available in 8-pin SOIC, DIP and 0.8mm thin 8-pad
- 10kHz or 80kHz
- Optimize capacitor size
TDFN packages
- Lead-free, halogen-free package option
APPLICATIONS
s
Negative voltage generator
s
Voltage doubler
s
Voltage splitter
s
Low EMI power source
s
GaAs FET biasing
s
Lithium battery power supply
s
Instrumentation
s
LCD contrast bias
s
Cellular phones, pagers
DESCRIPTION
The CAT660 is a charge-pump voltage converter. It will
invert a 1.5V to 5.5V input to a -1.5V to -5.5V output. Only
two external capacitors are needed. With a guaranteed
100mA output current capability, the CAT660 can replace
a switching regulator and its inductor. Lower EMI is
achieved due to the absence of an inductor.
In addition, the CAT660 can double a voltage supplied
from a battery or power supply. Inputs from 2.5V to 5.5V
will yield a doubled, 5V to 11V output voltage.
A Frequency Control pin (BOOST/FC) is provided to
select either a high (80kHz) or low (10kHz) internal
oscillator frequency, thus allowing quiescent current vs.
capacitor size trade-offs to be made. The 80kHz
frequency is selected when the FC pin is connected to
V+. The operating frequency can also be adjusted with
an external capacitor at the OSC pin or by driving OSC
with an external clock.
Both 8-pin DIP and SOIC packages are available in the
commercial and extended industrial temperature ranges.
The TDFN package has a 4x4mm footprint and features
a 0.8mm maximum height. Compared to the 8-pin SOIC
the TDFN package footprint is nearly 50% less. For die
availability, contact Catalyst Semiconductor marketing.
The CAT660 replaces the MAX660 and the LTC660.
In addition, the CAT660 is pin compatible with the 7660/
1044, offering an easy upgrade for applications with
100mA loads.
TYPICAL APPLICATION
1
C1
+
BOOST/FC
CAP+
GND
CAP-
V+
OSC
LV
OUT
+VIN
1.5V to 5.5V
8
7
6
5
Inverted
Negative
Output
Voltage
C1
+
1
2
3
4
BOOST/FC
CAP+
GND
CAP-
V+
OSC
LV
OUT
8
7
6
5
Doubled
Positive
Output
Voltage
2
3
4
CAT
660
CAT
660
VIN = 2.5V to 5.5V
VOLTAGE INVERTER
POSITIVE
VOLTAGE DOUBLER
© 2003 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 5000, Rev. P
CAT660
PIN CONFIGURATION
SOIC Package (S, X)
DIP Package (P)
TDFN Package (RD8, ZD8)
BOOST/FC 1
CAP+ 2
GND 3
CAP- 4
CAT
660
8 V+
7 OSC
6 LV
5 OUT
BOOST/FC 1
CAP+ 2
GND 3
CAP- 4
(Top View)
8 V+
CAT
660
7 OSC
6 LV
5 OUT
BOOST/FC 1
CAP+ 2
GND 3
CAP- 4
(Top View)
8 V+
CAT
660
7 OSC
6 LV
5 OUT
PIN DESCRIPTIONS
Pin Number
Name
1
Boost/FC
Inverter Mode
Frequency Control for the internal oscilla-
tor. With an external oscillator BOOST/FC
has no effect.
Boost/FC Oscillator Frequency
Open
V+
2
3
4
5
6
CAP+
GND
CAP-
OUT
LV
10kHz typical, 5kHz minimum
80kHz typical, 40kHz minimum
(Top View)
TDFN Package: 4mm x 4mm
0.8mm maximum height
Circuit Configuration
Doubler Mode
Same as inverter.
Oscillator Frequency
10kHz typical
80kHz typical, 40kHz minimum
Same as inverter.
Power supply. Positive voltage input.
Same as inverter.
Power supply ground.
LV must be tied to OUT for all input
voltages.
Charge pump capacitor. Positive terminal.
Power supply ground.
Charge pump capacitor. Negative terminal.
Output for negative voltage.
Low-Voltage selection pin. When the input
voltage is less than 3V, connect LV to GND.
For input voltages above 3V, LV may be
connected to GND or left open. If OSC is
driven externally, connect LV to GND.
Oscillator control input. An external capacitor
can be connected to lower the oscillator
frequency. An external oscillator can drive
OSC and set the chip operating frequency.
The charge-pump frequency is one-half the
frequency at OSC.
Power supply. Positive voltage input.
7
OSC
Same as inverter. Do not overdrive
OSC in doubling mode. Standard logic
levels will not be suitable. See the
applications section for additional
information.
Positive voltage output.
8
V+
ORDERING INFORMATION
Part Number
CAT660CPA
CAT660CSA
CAT660CSA-TE13
CAT660EPA
CAT660ESA
CAT660ESA-TE13
CAT660EXA
CAT660EXA-TE13
CAT660ERD8
CAT660EZD8
Package
8 lead Plastic DIP
8-lead SOIC
8-lead SOIC, Tape & Reel
8 lead Plastic DIP
8-lead SOIC
8-lead SOIC, Tape & Reel
8-lead SOIC (Lead-free, Halogen-free)
8-lead SOIC (Lead-free, Halogen-free)
8-pad TDFN
8-pad TDFN (Lead-free, Halogen-free)
Temperature Range
0°C to 70° C
0°C to 70° C
0°C to 70° C
-40°C to 85°C
-40°C to 85°C
-40°C to 85°C
-40°C to 85°C
-40°C to 85°C
-40°C to 85°C
-40°C to 85°C
Doc. No. 5000, Rev. P
2
CAT660
ABSOLUTE MAXIMUM RATINGS
V+ to GND ............................................................. 6V
Storage Temperature ......................... -65°C to 160°C
Input Voltage (Pins 1, 6 and 7) .. -0.3V to (V+ + 0.3V)
BOOST/FC and OSC Input Voltage ........... The least
negative of (Out - 0.3V) or (V+ - 6V) to (V+ + 0.3V)
Output Short-circuit Duration to GND .............. 1 sec.
(OUT may be shorted to GND for 1 sec without damage but
shorting OUT to V+ should be avoided.)
Lead Soldering Temperature (10 sec) ............. 300°C
Note: T
A
= Ambient Temperature
These are stress ratings only and functional operation is not
implied. Exposure to absolute maximum ratings for prolongued
time periods may affect device reliability. All voltages are with
respect to ground.
Operating Ambient Temperature Ranges
CAT660C .................0°C to 70°C
CAT660E .............. -40°C to 85°C
Continuous Power Dissipation (T
A
= 70°C)
Plastic DIP ................................................ 730mW
SOIC ......................................................... 500mW
TDFN ............................................................... 1W
ELECTRICAL CHARACTERISTICS
V+ = 5V, C1 = C2 = 150µF, Boost/FC = Open, C
OSC
= 0pF, and Test Circuit is Figure 1 unless otherwise noted.
Temperature is over operating ambient temperature range unless otherwise noted.
Parameter
Supply Voltage
Supply Current
Output Current
Output Resistance
Symbol
VS
IS
IOUT
RO
Conditions
Inverter: LV = Open. R
L
= 1kΩ
Inverter: LV = GND. R
L
= 1kΩ
Doubler: LV = OUT. R
L
= 1kΩ
BOOST/FC = open, LV = Open
BOOST/FC = V+ , LV = Open
OUT is more negative than -4V
C1 = C2 = 10µF,
BOOST/FC = V+ (C1, C2 ESR
≤
0.5Ω)
C1 = C2 = 150µF (Note 2)
Oscillator Frequency FOSC
(Note 3)
OSC Input Current
Power Efficiency
IOSC
PE
BOOST/FC = Open
BOOST/FC = V+
BOOST/FC = Open
BOOST/FC = V+
R
L
= 1kΩ connected between V+ and
OUT, T
A
= 25
°
C (Doubler)
R
L
= 500Ω connected between GND and
OUT, T
A
= 25
°
C (Inverter)
I
L
= 100mA to GND, T
A
= 25
°
C (Inverter)
Voltage Conversion
Efficiency
1. In Figure 1, test circuit electrolytic capacitors C1 and C2 are 150µF and have 0.2Ω maximum ESR. Higher ESR levels may reduce
efficiency and output voltage.
2. The output resistance is a combination of the internal switch resistance and the external capacitor ESR. For maximum voltage and
efficiency keep external capacitor ESR under 0.2Ω.
3. FOSC is tested with C
OSC
= 100pF to minimize test fixture loading. The test is correlated back to C
OSC
=0pF to simulate the capacitance at
OSC when the device is inserted into a test socket without an external C
OSC
.
Min
3.0
1.5
2.5
Typ
Max
5.5
5.5
5.5
Units
V
0.3
1
100
0.5
3
mA
mA
15
6.5
5
40
10
80
±1
±5
96
92
98
96
88
99
99.9
10
Ω
kHz
µA
%
VEFF
No load, T
A
= 25
°
C
%
3
Doc. No. 5000, Rev. P
CAT660
Figure 1. Test Circuit
V+
1
2
+
C1
150µF
BOOST/FC
CAP+
GND
CAP-
V+
OSC
LV
OUT
8
7
6
5
IS
V+
5V
External
Oscillator
COSC
RL
IL
VOUT
3
4
CAT660
Voltage Inverter
C2
+ 150µF
TYPICAL OPERATING CHARACTERISTICS
Typical characteristic curves are generated using the test circuit in Figure 1. Inverter test conditions are: V+=5V, LV
= GND, BOOST/FC = Open and T
A
= 25˚C unless otherwise indicated. Note that the charge-pump frequency is one-
half the oscillator frequency.
Supply Current vs. Supply Voltage
1200
1000
800
Supply Current vs. Oscillator Frequency
1000
TA = 25
TA=
V+ = 5 V
Boost=V+
600
400
200
0
1.5 2.0
2.5 3.0 3.5
4.0 4.5
5.0
5.5
10
1
10
100
100
BOOST=Open
Supply Voltage (V)
Oscillator Frequency (kHz)
Output Resistance vs. Supply Voltage
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
Output Resistance vs. Temperature
18
16
14
Boost = Open
V+ = 1 V
1.5
TA = 25
Boost = Open
12
10
8
6
4
2
0
-60
-40
-20
0
20
40
60
80
100
V+ = 3 V
V+ = 5 V
Supply Voltage (V)
Doc. No. 5000, Rev. P
Temperature (°C)
4
CAT660
TYPICAL OPERATING CHARACTERISTICS
Output Voltage vs. Load Current, V+=5V
-5.0
-4.8
-4.6
-4.4
-4.2
-4.0
0
20
40
60
80
100
TA =
Rout =
Efficiency vs. Load Current
100
90
V+ = 1.5V
Output Voltage (V)
Efficiency (%)
80
V+ = 5V
70
60
50
40
0.1
TA = 25
Boost = Open
V+ = 3V
1.0
10.0
100.0
Load Current (mA)
Load Current (mA)
Output Voltage Drop vs. Load Current
Output Voltage Drop From
Supply Voltage (V)
1.0
Oscillator Frequency vs. Supply Voltage
12
Oscillator Frequency (kHz)
0.8
0.6
0.4
TA = 25
Boost = Open
V+ = 4.5V
V+= 3.5V
V+= 2.5V
V+=1.5V
V+ = 5.5V
10
8
6
4
2
0
TA = 25
Boost = Open
OSC = Open
0.2
0.0
0
10
20
30 40
50 60
70
80
90 100
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Load Current (mA)
Supply Voltage (V)
Oscillator Frequency vs. Supply Voltage
100
Oscillator Frequency (kHz)
TA = 25
Boost = V +
OSC = Open
80
60
40
20
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Supply Voltage (V)
5
Doc. No. 5000, Rev. P
