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CAT808NTDI-27GT3

Supervisory Circuits Open drain Act low

器件类别:电源/电源管理    电源电路   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
零件包装代码
SOT-23
包装说明
HALOGEN FREE AND ROHS COMPLIANT, TSOT-23, 5 PIN
针数
5
制造商包装代码
419AE
Reach Compliance Code
unknown
ECCN代码
EAR99
Factory Lead Time
1 week
其他特性
DETECTION THRESHOLD VOLTAGE IS 2.7V
可调阈值
NO
模拟集成电路 - 其他类型
POWER SUPPLY SUPPORT CIRCUIT
JESD-30 代码
R-PDSO-G3
JESD-609代码
e4
长度
2.9 mm
湿度敏感等级
1
信道数量
1
功能数量
1
端子数量
3
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
VSSOP
封装等效代码
TSOP5/6,.11,37
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度)
260
电源
1.2/6 V
认证状态
Not Qualified
座面最大高度
1 mm
最大供电电流 (Isup)
0.01 mA
最大供电电压 (Vsup)
6 V
最小供电电压 (Vsup)
1.2 V
标称供电电压 (Vsup)
2.4 V
表面贴装
YES
温度等级
INDUSTRIAL
端子面层
Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式
GULL WING
端子节距
0.95 mm
端子位置
DUAL
阈值电压标称
+2.7V
处于峰值回流温度下的最长时间
40
宽度
1.6 mm
文档预览
CAT808
Low-Power Precision
Voltage Detector
Description
The CAT808 is a high−precision voltage detector designed for
monitoring single cell and multi−cell batteries. Voltage detection
thresholds between 2.0 V and 3.5 V are provided with 0.1 V resolution
and
±3.0%
accuracy.
The CAT808 open−drain output is active low until the V
DD
voltage
exceeds the detection threshold. A low hysteresis is built into the
device to minimize output “chatter”, while V
DD
passes through the
detection threshold, and the output transitions high.
After the CAT808 asserts the output high condition, it continues to
monitor V
DD
until it drops below the detection threshold, when the
output goes low until V
DD
once again exceeds the detection threshold.
Features
http://onsemi.com
5
1
TSOT−5
TD SUFFIX
CASE 419AE
MARKING DIAGRAM
TLYM
Ultra Low Current Consumption 2.4
mA
Accurate Voltage Detection Threshold
Fine Voltage Detection Threshold Resolution
Open Drain Output (Active Low)
Industrial Temperature Range
−40°C
to +85°C
5−pin TSOT−23
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Battery−Powered Systems
Power Supply Monitoring
Handheld and Portable Equipment
Processor Supervisor Reset
TL
Y
M
= Specific Device Code
= Production Year
= Production Month
PIN CONNECTIONS
1
OUT
V
DD
GND
(Top View)
NC
NC
Applications
IN
V
DD
Battery
Voltage
CAT808
OUT
GND
10 kW
DC−DC
CONVERTER
SHDN
OUT
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
GND
Note:
The value of the pull−up resistor is not critical
Figure 1. Typical Application
©
Semiconductor Components Industries, LLC, 2011
September, 2011
Rev. 6
1
Publication Order Number:
CAT808/D
CAT808
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Temperature under Bias
Storage Temperature
Voltage on any Pin with Respect to GND (Notes 1, 2)
V
DD
with Respect to GND
Lead Soldering temperature (10 seconds)
Power Dissipation
Ratings
−55
to +125
−65
to +150
−2.0
to V
DD
+ 2.0
−2.0
to 7.0
+300
250
Units
°C
°C
V
V
°C
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The Minimum DC input voltage is
−0.5
V. During transitions, inputs may undershoot to
−2.0
V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+0.5 V, which may overshoot to V
CC
+2.0 V for periods of less than 20 ns.
2. Latch−up protection is provided for stresses up to 100 mA on all pins from
−1
V to V
CC
+1 V.
Table 2. RECOMMENDED OPERATING CONDITIONS
Parameters
V
DD
Operating Temperature Range
Ratings
+1.2 to +6.0
−40
to +85
Units
V
°C
Table 3. DC ELECTRICAL CHARACTERISTICS
(T
A
=
−40°C
to +85°C, V
DD
= 1.2 V to 6.0 V)
Symbol
V
DET
Parameter
Detection Voltage
Conditions
CAT808Nxxx−25
CAT808Nxxx−27
CAT808Nxxx−32
CAT808Nxxx−35
I
DD
Current Consumption
V
DD
= 4.0 V
V
DD
= 5.0 V
V
DD
= 6.0 V
I
OUT
I
LEAK
T
PHL/LH
DV
DET
DT
A
V
DET
(typ)
Output Sink Current
V
DS
= 0.5 V
V
DD
= 1.2 V
V
DD
= 2.4 V
Output Leakage Current
Response Time
Detection Voltage Temperature
Coefficient (Note 3)
V
DS
= 5.0 V, V
DD
= 5.0 V
Min
2.43
2.62
3.12
3.42
0.6
2.9
Typ
2.5
2.7
3.2
3.5
2.4
3.5
5
1.4
5
±10
Max
2.57
2.78
3.28
3.58
5
7
10
1
60
±100
mA
ms
ppm/°C
mA
mA
Units
V
3. The temperature change ratio in the detection voltage [ppm/°C] is calculated by using the following equation:
DV
DET
DT
A
@
V
DET
(typ)
1, 000, 000[ppm
o
C]
http://onsemi.com
2
CAT808
Operation – Voltage Detector
The CAT808 has an active low output that asserts (pulls
low) when the supply voltage drops below the detection
threshold voltage (V
DET
). The open−drain output requires
an external pull−up resistor between the output pin and the
supply voltage (as shown in the typical application
diagram). On power−up, OUT is held active low until the
supply voltage (V
DD
) rises above V
DET
. While V
DD
is above
V
DET
, OUT stays high until V
DD
drops below V
DET
, then
OUT once again goes low.
V
DD
*
V
DET(MAX)
V
DET
V
DET(MIN)
GND
T
PLH
V
OH
V
DD
OUT
VOLTAGE
REFERENCE
Figure 2. Block Diagram
V
DET(MAX)
V
DET
V
DET(MIN)
T
PHL
OUT Slews with V
DD
OUT
* Voltage of V
DD
below 1 volt will not be able to maintain low output.
Figure 3. Timing Diagram
Table 4. PIN FUNCTIONS
Pin
V
DD
GND
OUT
NC
Function
Voltage Input and Power Supply
Ground Pin
Active Low Open Drain output
No Connect, the pin is electrically open
http://onsemi.com
3
CAT808
TYPICAL ELECTRICAL OPERATING CHARACTERISTICS
(Typical values at T
A
= 25°C)
5
4
2.705
V
DET
(V)
2.700
2
3
4
SUPPLY VOLTAGE (V)
5
6
2.695
−40
3
2
1
0
2.710
SUPPLY CURRENT (mA)
−5
30
TEMPERATURE (°C)
65
100
Figure 4. V
DD
Supply Current vs. V
DD
Supply
Voltage
100
T
PLH
10
8
6
4
2
0
Figure 5. V
DET
Detection Voltage vs.
Temperature
RESPONSE TIME (ms)
10
−40°C
+25°C
+90°C
1
0.1
T
PHL
0.01
0.001
0.01
0.1
1
10
100
I
OUT
(mA)
1.0
1.5
V
DD
(V)
2.0
2.5
LOAD CAPACITANCE (nF)
Figure 6. Response Time vs. Load
Capacitance
Figure 7. I
OUT
Transistor Output Current vs.
V
DD
Supply Voltage
http://onsemi.com
4
CAT808
PACKAGE DIMENSIONS
TSOT−23, 5 LEAD
CASE 419AE−01
ISSUE O
SYMBOL
A
A1
A2
b
c
D
E1
E
E
E1
e
L
L1
L2
0.30
0.01
0.80
0.30
0.12
0.15
2.90 BSC
2.80 BSC
1.60 BSC
0.95 TYP
0.40
0.60 REF
0.25 BSC
0.50
0.05
0.87
D
e
MIN
NOM
MAX
1.00
0.10
0.90
0.45
0.20
θ
TOP VIEW
A2 A
q
b
A1
L1
L
c
L2
SIDE VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MO-193.
END VIEW
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参数对比
与CAT808NTDI-27GT3相近的元器件有:CAT808NTDI-32GT3。描述及对比如下:
型号 CAT808NTDI-27GT3 CAT808NTDI-32GT3
描述 Supervisory Circuits Open drain Act low Supervisory Circuits SUP OPEN DRAIN ACT LOW
Brand Name ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 SOT-23 SOT-23
包装说明 HALOGEN FREE AND ROHS COMPLIANT, TSOT-23, 5 PIN HALOGEN FREE AND ROHS COMPLIANT, TSOT-23, 5 PIN
针数 5 5
制造商包装代码 419AE 419AE
Reach Compliance Code unknown unknown
ECCN代码 EAR99 EAR99
其他特性 DETECTION THRESHOLD VOLTAGE IS 2.7V DETECTION THRESHOLD VOLTAGE IS 3.2V
可调阈值 NO NO
模拟集成电路 - 其他类型 POWER SUPPLY SUPPORT CIRCUIT POWER SUPPLY SUPPORT CIRCUIT
JESD-30 代码 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e4 e4
长度 2.9 mm 2.9 mm
湿度敏感等级 1 1
信道数量 1 1
功能数量 1 1
端子数量 3 3
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 VSSOP VSSOP
封装等效代码 TSOP5/6,.11,37 TSOP5/6,.11,37
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度) 260 260
电源 1.2/6 V 1.2/6 V
认证状态 Not Qualified Not Qualified
座面最大高度 1 mm 1 mm
最大供电电流 (Isup) 0.01 mA 0.01 mA
最大供电电压 (Vsup) 6 V 6 V
最小供电电压 (Vsup) 1.2 V 1.2 V
标称供电电压 (Vsup) 2.4 V 2.4 V
表面贴装 YES YES
温度等级 INDUSTRIAL INDUSTRIAL
端子面层 Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式 GULL WING GULL WING
端子节距 0.95 mm 0.95 mm
端子位置 DUAL DUAL
阈值电压标称 +2.7V +3.2V
处于峰值回流温度下的最长时间 40 40
宽度 1.6 mm 1.6 mm
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