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CAT93C46/56/57/66/86

1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM

FEATURES

High speed operation:

LOGEN

Power-up inadvertant write protection

1,000,000 Program/erase cycles

100 year data retention

Commercial, industrial and automotive

– 93C46/56/57/66: 1MHz

– 93C86: 3MHz

Low power CMOS technology

1.8 to 6.0 volt operation

Selectable x8 or x16 memory organization

Self-timed write cycle with auto-clear

Hardware and software write protection

temperature ranges

Sequential read (except CAT93C46)

Program enable (PE) pin (CAT93C86 only)

“Green” package option available

DESCRIPTION

The CAT93C46/56/57/66/86 are 1K/2K/2K/4K/16K-bit

Serial EEPROM memory devices which are configured

as either registers of 16 bits (ORG pin at V

) or 8 bits

(ORG pin at GND). Each register can be written (or read)

serially by using the DI (or DO) pin. The CAT93C46/56/

57/66/86 are manufactured using Catalyst’s advanced

CMOS EEPROM floating gate technology. The devices

are designed to endure 1,000,000 program/erase cycles

and have a data retention of 100 years. The devices are

available in 8-pin DIP, 8-pin SOIC, 8-pin TSSOP and 8-

pad TDFN packages.

PIN CONFIGURATION

DIP Package (P, L)

SOIC Package (J,W) SOIC Package (S,V) SOIC Package (K,X)

ORG

GND

NC (PE*) SK

ORG

GND

VCC

NC (PE*)

ORG

GND

TSSOP Package (U,Y)

VCC

ORG

GND

VCC

NC (PE*)

VCC

NC (PE*)

ORG

GND

*Only For 93C86

** TSSOP (U/Y) package only available for 93C46/56/57/66

TDFN Package (RD4, ZD4)

VCC

ORG

GND

CAT93C46

CAT93C56

CAT93C66

PIN FUNCTIONS

Pin Name

GND

ORG

PE*

Function

Chip Select

Clock Input

Serial Data Input

Serial Data Output

+1.8 to 6.0V Power Supply

Ground

Memory Organization

No Connection

Program Enable

BLOCK DIAGRAM

VCC

GND

ORG

MEMORY ARRAY

ORGANIZATION

ADDRESS

DECODER

Bottom View

DATA

PE*

MODE DECODE

LOGIC

OUTPUT

BUFFER

Note: When the ORG pin is connected to VCC,

the x16 organization is selected. When it is

connected to ground, the x8 pin is selected. If

the ORG pin is left unconnected, then an internal

pullup device will select the x16 organization.

CLOCK

GENERATOR

Characteristics subject to change without notice.

Doc. No. 1023, Rev. J

93C46/56/57/66/86

ABSOLUTE MAXIMUM RATINGS*

Temperature Under Bias .................. -55°C to +125°C

Storage Temperature ........................ -65°C to +150°C

Voltage on any Pin with

Respect to Ground

(1)

............. -2.0V to +V

+2.0V

with Respect to Ground ................ -2.0V to +7.0V

Package Power Dissipation

Capability (T

= 25°C) ................................... 1.0W

Lead Soldering Temperature (10 secs) ............ 300°C

Output Short Circuit Current

(2)

........................ 100 mA

RELIABILITY CHARACTERISTICS

Symbol

END(3)

DR(3)

ZAP(3)

LTH(3)(4)

Parameter

Endurance

Data Retention

ESD Susceptibility

Latch-Up

Reference Test Method

MIL-STD-883, Test Method 1033

MIL-STD-883, Test Method 1008

MIL-STD-883, Test Method 3015

JEDEC Standard 17

Min

1,000,000

100

2000

100

Typ

Max

Units

Cycles/Byte

Years

Volts

*COMMENT

Stresses above those listed under “Absolute Maximum

Ratings” may cause permanent damage to the device.

These are stress ratings only, and functional operation of

the device at these or any other conditions outside of those

listed in the operational sections of this specification is not

implied. Exposure to any absolute maximum rating for

extended periods may affect device performance and

reliability.

D.C. OPERATING CHARACTERISTICS

= +1.8V to +6.0V, unless otherwise specified.

Symbol

CC1

CC2

SB1

SB2(5)

IL1

IH1

IL2

IH2

OL1

OH1

OL2

OH2

Parameter

Power Supply Current

(Operating Write)

Power Supply Current

(Operating Read)

Power Supply Current

(Standby) (x8 Mode)

Power Supply Current

(Standby) (x16Mode)

Input Leakage Current

Output Leakage Current

(Including ORG pin)

Input Low Voltage

Input High Voltage

Input Low Voltage

Input High Voltage

Output Low Voltage

Output High Voltage

Output Low Voltage

Output High Voltage

Test Conditions

= 1MHz

= 5.0V

= 1MHz

= 5.0V

CS = 0V

ORG=GND

CS=0V

ORG=Float or V

= 0V to V

OUT

= 0V to V

CS = 0V

4.5V

≤

< 5.5V

4.5V

≤

< 5.5V

1.8V

≤

< 4.5V

4.8V

≤

< 4.5V

4.5V

≤

< 5.5V

= 2.1mA

4.5V

≤

< 5.5V

= -400µA

1.8V

≤

< 4.5V

= 1mA

1.8V

≤

< 4.5V

= -100µA

- 0.2

2.4

0.2

-0.1

x 0.7

Min

Typ

Max

500

0.8

+ 1

x 0.2

0.4

Units

µA

Note:

(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC

voltage on output pins is V

+0.5V, which may overshoot to V

+2.0V for periods of less than 20 ns.

(2) Output shorted for no more than one second. No more than one output shorted at a time.

(3) This parameter is tested initially and after a design or process change that affects the parameter.

(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to V

+1V.

(5) Standby Current (ISB

)=0µA (<900nA) for 93C46/56/57/66, (ISB

)=2µA for 93C86.

Doc. No. 1023, Rev. J

93C46/56/57/66/86

PIN CAPACITANCE

Symbol

OUT(3)

IN(3)

Test

Output Capacitance (DO)

Input Capacitance (CS, SK, DI, ORG)

Conditions

OUT

=0V

Min

Typ

Max

Units

INSTRUCTION SET

Instruction Device

Type

READ

93C46

93C56

(1)

93C66

93C57

93C86

93C46

93C56

(1)

93C66

93C57

93C86

93C46

93C56

(1)

93C66

93C57

93C86

93C46

93C56

93C66

93C57

93C86

93C46

93C56

93C66

93C57

93C86

93C46

93C56

93C66

93C57

93C86

93C46

93C56

93C66

93C57

93C86

Start Opcode

Bit

Address

x16

A6-A0

A8-A0

A7-A0

A10-A0

A6-A0

A8-A0

A7-A0

A10-A0

A6-A0

A8-A0

A7-A0

A10-A0

11XXXXX

11XXXXXXX

11XXXXXX

Data

x16

Comments

Read Address AN–A0

(2)

A5-A0

A7-A0

A6-A0

A9-A0

A5-A0

A7-A0

A6-A0

A9-A0

A5-A0

A7-A0

A6-A0

A9-A0

11XXXX

11XXXXXX

11XXXXX

Clear Address AN–A0

ERASE

D7-D0

D15-D0

Write Address AN–A0

WRITE

Write Enable

EWEN

11XXXXXXXXX 11XXXXXXXX

00XXXXX

00XXXXXXX

00XXXXXX

00XXXX

00XXXXXX

00XXXXX

Write Disable

EWDS

00XXXXXXXXX 00XXXXXXXX

10XXXXX

10XXXXXXX

10XXXX

10XXXXXX

Clear All Addresses

ERAL

10XXXXXX

10XXXXX

10XXXXXXXXX 10XXXXXXXX

01XXXXX

01XXXXXXX

01XXXXXX

01XXXX

01XXXXXX

01XXXXX

D7-D0

D15-D0

Write All Addresses

WRAL

01XXXXXXXXX 01XXXXXXXX

Note:

(1) Address bit A8 for 256x8 ORG and A7 for 128x16 ORG are "Don't Care" bits, but must be kept at either a "1" or "0" for READ, WRITE

and ERASE commands.

(2) Applicable only to 93C86

(3) This parameter is tested initially and after a design or process change that affects the parameter.

Doc. No. 1023, Rev. J

93C46/56/57/66/86

A.C. CHARACTERISTICS (93C46/56/57/66)

Limits

1.8V-6V

Test

SYMBOL PARAMETER

CSS

CSH

DIS

DIH

PD1

PD0

HZ(1)

CSMIN

SKHI

SKLOW

MAX

CS Setup Time

CS Hold Time

DI Setup Time

DI Hold Time

Output Delay to 1

Output Delay to 0

Output Delay to High-Z

Program/Erase Pulse Width

Minimum CS Low Time

Minimum SK High Time

Minimum SK Low Time

Output Delay to Status Valid

Maximum Clock Frequency

250

= 100pF

(3)

Conditions

Min

200

400

0.5

500

Max

Min

100

200

0.5

200

0.25

1000

Max

Min

100

0.25

100

Max

Units

µs

kHz

2.5V-6V

4.5V-5.5V

A.C. CHARACTERISTICS (93C86)

Limits

Test

SYMBOL PARAMETER

CSS

CSH

DIS

DIH

PD1

PD0

HZ(1)

CSMIN

SKHI

SKLOW

MAX

CS Setup Time

CS Hold Time

DI Setup Time

DI Hold Time

Output Delay to 1

Output Delay to 0

Output Delay to High-Z

Program/Erase Pulse Width

Minimum CS Low Time

Minimum SK High Time

Minimum SK Low Time

Output Delay to Status Valid

Maximum Clock Frequency

500

= 100pF

(3)

Conditions

1.8V-6V

Min

200

400

0.5

1000

Max

2.5V-6V

Min

100

0.5

200

0.15

0.1

3000

Max

4.5V-5.5V

Min

0.15

100

Max

Units

µs

kHz

NOTE:

(1) This parameter is tested initially and after a design or process change that affects the parameter.

Doc. No. 1023, Rev. J

93C46/56/57/66/86

POWER-UP TIMING

(1)(2)

SYMBOL

PUR

PUW

PARAMETER

Power-up to Read Operation

Power-up to Write Operation

Max

Units

NOTE:

(1) This parameter is tested initially and after a design or process change that affects the parameter.

(2) t

PUR

and t

PUW

are the delays required from the time V

is stable until the specified operation can be initiated.

(3) The input levels and timing reference points are shown in “AC Test Conditions” table.

A.C. TEST CONDITIONS

Input Rise and Fall Times

Input Pulse Voltages

Timing Reference Voltages

Input Pulse Voltages

Timing Reference Voltages

≤

50ns

0.4V to 2.4V

0.8V, 2.0V

0.2V

to 0.7V

0.5V

4.5V

≤

5.5V

4.5V

≤

5.5V

1.8V

≤

4.5V

1.8V

≤

4.5V

Doc. No. 1023, Rev. J

参数对比

与CAT93C86V相近的元器件有：CAT93C57LI、CAT93C86LI、CAT93C56WI-G、CAT93C66YI、CAT93C57X、CAT93C86SI、CAT93C86VI、CAT93C46RWI-GT3。描述及对比如下：

型号	CAT93C86V	CAT93C57LI	CAT93C86LI	CAT93C56WI-G	CAT93C66YI	CAT93C57X	CAT93C86SI	CAT93C86VI	CAT93C46RWI-GT3
描述	EEPROM (2048x8)(1024x16)16K	EEPROM (256x8) (128x16) 2K	EEPROM (2048x8)(1024x16)16K	EEPROM (256x8)/(128x16) 2K	EEPROM (512x8) (256x16) 4K	EEPROM (256x8) (128x16) 2K	EEPROM (2048x8)(1024x16)16K	EEPROM (2048x8)(1024x16)16K	EEPROM 1K-Bit Microwire
是否Rohs认证	符合	符合	符合	符合	符合	符合	不符合	符合	符合
包装说明	SOP,	LEAD AND HALOGEN FREE, PLASTIC, DIP-8	LEAD AND HALOGEN FREE, PLASTIC, DIP-8	SOIC-8	LEAD AND HALOGEN FREE, TSSOP-8	SOP,	SOP,	SOP, SOP8,.25	0.150 INCH, ROHS COMPLIANT, MS-012, SOIC-8
Reach Compliance Code	compliant	compliant	compliant	unknown	unknown	compliant	unknown	unknown	compliant
备用内存宽度	8	8	8	8	8	8	8	8	8
最大时钟频率 (fCLK)	1 MHz	0.5 MHz	1 MHz	2 MHz	0.5 MHz	0.5 MHz	1 MHz	1 MHz	2 MHz
数据保留时间-最小值	100	100	100	100	100	100	100	100	100
JESD-30 代码	R-PDSO-G8	R-PDIP-T8	R-PDIP-T8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
JESD-609代码	e3	e3	e3	e4	e3	e3	e0	e3	e4
长度	4.9 mm	9.36 mm	9.36 mm	4.9 mm	4.4 mm	5.3 mm	4.9 mm	4.9 mm	4.9 mm
内存密度	16384 bit	2048 bit	16384 bit	2048 bit	4096 bit	2048 bit	16384 bit	16384 bit	1024 bit
内存集成电路类型	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
内存宽度	16	16	16	16	16	16	16	16	16
功能数量	1	1	1	1	1	1	1	1	1
端子数量	8	8	8	8	8	8	8	8	8
字数	1024 words	128 words	1024 words	128 words	256 words	128 words	1024 words	1024 words	64 words
字数代码	1000	128	1000	128	256	128	1000	1000	64
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	85 °C	85 °C	85 °C	85 °C	70 °C	85 °C	85 °C	85 °C
最低工作温度	-	-40 °C	-40 °C	-40 °C	-40 °C	-	-40 °C	-40 °C	-40 °C
组织	1KX16	128X16	1KX16	128X16	256X16	128X16	1KX16	1KX16	64X16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	SOP	DIP	DIP	SOP	TSSOP	SOP	SOP	SOP	SOP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
并行/串行	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL
峰值回流温度（摄氏度）	260	NOT SPECIFIED	NOT SPECIFIED	260	260	260	NOT SPECIFIED	260	260
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.75 mm	4.57 mm	4.57 mm	1.75 mm	1.1 mm	2.03 mm	1.75 mm	1.75 mm	1.75 mm
串行总线类型	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE
最大供电电压 (Vsup)	6 V	6 V	6 V	5.5 V	6 V	6 V	6 V	6 V	5.5 V
最小供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	1.8 V	2.5 V	2.5 V	2.5 V	2.5 V	1.8 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	3 V
表面贴装	YES	NO	NO	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子面层	Tin (Sn)	Tin (Sn)	Matte Tin (Sn) - annealed	Nickel/Palladium/Gold (Ni/Pd/Au)	Tin (Sn)	Tin (Sn)	Tin/Lead (Sn/Pb)	Tin (Sn)	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	1.27 mm	2.54 mm	2.54 mm	1.27 mm	0.65 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	40	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	40	40	NOT SPECIFIED	40	40
宽度	3.9 mm	7.62 mm	7.62 mm	3.9 mm	3 mm	5.25 mm	3.9 mm	3.9 mm	3.9 mm
是否无铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅	-	不含铅	不含铅
厂商名称	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	-	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)
零件包装代码	SOIC	DIP	DIP	-	SOIC	SOIC	SOIC	SOIC	SOIC
针数	8	8	8	-	8	8	8	8	8
ECCN代码	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	-	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	-
湿度敏感等级	1	-	-	1	1	3	-	-	1
Base Number Matches	1	1	-	-	-	1	1	-	1
耐久性	-	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	-	-	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles
封装等效代码	-	DIP8,.3	DIP8,.3	SOP8,.25	TSSOP8,.25	-	-	SOP8,.25	SOP8,.25
电源	-	3/5 V	3/5 V	3/5 V	3/5 V	-	-	3/5 V	2/5 V
最大待机电流	-	0.00001 A	0.00001 A	0.00001 A	0.00001 A	-	-	0.00001 A	0.00001 A
最大压摆率	-	0.003 mA	0.003 mA	0.003 mA	0.003 mA	-	-	0.003 mA	0.001 mA
写保护	-	SOFTWARE	HARDWARE/SOFTWARE	SOFTWARE	SOFTWARE	-	-	HARDWARE/SOFTWARE	SOFTWARE