CBCP68 NPN
CBCP69 PNP
SURFACE MOUNT SILICON
COMPLEMENTARY
SMALL SIGNAL TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBCP68 and
CBCP69 are complementary silicon transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
applications requiring high current capability.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(ON)
VBE(ON)
hFE
hFE
hFE
fT
Cob
SYMBOL
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
A
A
mA
mA
W
°C
°C/W
25
20
5.0
1.0
2.0
100
200
2.0
-65 to +150
62.5
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
TYP
VCB=25V
VCB=25V, TA=150°C
VEB=5.0V
IC=10µA
IC=10mA
IE=1.0µA
IC=1.0A, IB=100mA
VCE=10V, IC=5.0mA
VCE=1.0V, IC=1.0A
VCE=10V, IC=5.0mA
VCE=1.0V, IC=500mA
VCE=1.0V, IC=1.0A
VCE=5.0V, IC=10mA, f=20MHz
VCB=5.0V, IE=0, f=450kHz
25
20
5.0
MAX
10
1.0
10
UNITS
µA
mA
µA
V
V
V
V
V
V
0.5
0.6
1.0
50
85
60
65
25
375
MHz
pF
R6 (4-August 2017)
CBCP68 NPN
CBCP69 PNP
SURFACE MOUNT SILICON
COMPLEMENTARY
SMALL SIGNAL TRANSISTORS
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Colllector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R6 (4-August 2017)
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nd
day air)
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• Up-screening capabilities
REQUESTING PRODUCT PLATING
1.
2.
If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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