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CBT-120-UV-C31-P382-22

LED Lighting Modules UV 382-392nm 16.1W Min R Flux

器件类别:光电子/LED   

厂商名称:Luminus Devices

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器件参数
参数名称
属性值
产品种类
Product Category
LED Lighting Modules
制造商
Manufacturer
Luminus Devices
RoHS
Details
系列
Packaging
Tray
工厂包装数量
Factory Pack Quantity
10
文档预览
CBT-120-UVProduct Datasheet
CBT-120 Product
CBT-120-UV LEDs
Features:
Over 16.0 W of optical power.
Table of Contents
Technology Overview
. . . . . .2
Binning Structure
. . . . . . . . . .3
Optical & Electrical
Characteristics
. . . . . . . . . . . . .4
Optical Electrical Characteristics
Graphs
. . . . . . . . . . . . . . . . . . . .5
CBT-120 Reliability and Typical
Spectrum
. . . . . . . . . . . . . . . . . .6
Thermal Resistance Slim
Package(C14)
. . . . . . . . . . . . . .7
Thermal Resistance Square
Package (C31)
. . . . . . . . . . . . . .8
Mechanical Dimensions Slim
Package (C14)
. . . . . . . . . . . . . .9
Mechanical Dimensions Square
Package (C31)
. . . . . . . . . . . . 10
Ordering Information
. . . . 11
High thermal conductivity package .
Junction to heat sink thermal resistance of < 1 °C/W
UV LED technology for very high power density and uniform emission
Large, monolithic chip with surface emitting area of 12 mm
2
, 16:9 aspect ratio
Low-profile window for efficient coupling into small-etendue systems
High radiometric efficiency
Environmentally friendly: RoHS compliant, mercury-free
Variable drive currents: less than 1 A through 30 A
NIST traceable optical and electrical measurement testing
Applications
Curing:
Inks
Coatings
Adhesives
Inspection
Machine Vision
Fiber-coupled illumination
Specialty Projection Systems for
Maskless Lithography:
Optically matched to TI 0.95”DMD
Rapid Prototyping and 3D printing
Medical and Scientific
Instrumentation
1
PDS-001574 Rev 07
© 2014 Luminus Devices, Inc. - All Rights Reserved
Luminus Devices, Inc.
T
978.528.8000 • www.luminus.com
1100 Technology Park Drive • Billerica, MA 01821
CBT-120-UV Product Datasheet
Technology Overview
Luminus LEDs benefit from innovations in device technology, chip packaging and thermal management. This suite of technologies give
engineers and system designers the freedom to develop solutions both high in power and efficiency.
Luminus Technology
Luminus’ technology enables large area LED chips to emit
photons uniformly over the entire LED chip surface. The intense
optical power density produced by these UV LEDs facilitate
designs which replace arc and halogen lamps where arrays of
traditional high power LEDs cannot.
For UV devices, Luminus engineers the LEDs to maximize light
extraction and to emit with a Lambertian far-field distribution
pattern. The design maximizes efficiency and allows for flexible
optical designs.
Reliability
Designed from the ground up, Luminus LEDs are one of the
most reliable light sources in the world today. Luminus LEDs
have passed a rigorous suite of environmental and mechanical
stress tests, including mechanical shock, vibration, temperature
cycling and humidity, and have been fully qualified for use in
extreme high power and high current applications. With very
low failure rates and median lifetimes that typically exceed
10,000 hours, Luminus LEDs are ready for even the most
demanding applications.
Packaging Technology
Thermal management is critical in high power LED applications.
Luminus CBT-120-UV LEDs have the lowest thermal resistance of
any LED on the market with a thermal resistance from junction
to heat sink of 0.73°C/W or 0.88°C/W. This allows the LED to be
driven at higher current densities while maintaining a low
junction temperature, thereby resulting in brighter solutions
and longer lifetimes.
Environmental Benefits
Luminus LEDs help reduce power consumption and the amount
of hazardous waste entering the environment. All LED products
manufactured by Luminus are RoHS compliant and free of
hazardous materials, including lead and mercury.
Understanding Big Chip LED Test Specifications
Every Luminus LED is fully tested to ensure that it meets the high quality standards expected from Luminus’ products.
Testing Temperature
Luminus core board products are typically measured in such a
way that the characteristics reported agree with how the
devices will actually perform when incorporated into a system.
This measurement is accomplished by mounting the devices on
a 40ºC heat sink and measuring the device while fully powered.
This method of measurement ensures that Luminus LEDs
perform in the field just as they are specified.
Multiple Operating Points
The tables on the following pages provide typical optical and
electrical characteristics for the standard drive conditions. Since
the LEDs can be operated over a wide range of drive
conditions(currents from <1A to 30 A, and duty cycle from <1%
to 100%) there are many other potential values attainable.
Driving devices beyond recommended driving conditions
shortens lifetime (see derating curves on page 6).
2
PDS-001574 Rev 07
© 2014 Luminus Devices, Inc. - All Rights Reserved
Luminus Devices, Inc.
T
978.528.8000 • www.luminus.com
1100 Technology Park Drive • Billerica, MA 01821
CBT-120-UVProduct Datasheet
CBT-120 Product
CBT-120-UV Binning Structure
CBT-120-UV LEDs are specified for luminous flux and chromaticity/wavelength at a drive current of 18 A (1.5 A/mm2) and placed into one
of the following Power Bins and Wavelength Bins:
Power Bins
Color
Power Flux Bin (F)
M
N
UV
P
Q
R
*Note: Luminus maintains a +/- 6% tolerance on power measurements.
Minimum Flux (W)
13.3
14.6
16.1
17.7
19.5
Maximum Flux (W)
14.6
16.1
17 .7
19 .5
21 .4
Wavelength Bins
Color
Wavelength Bin (123)
382
387
UV
392
400
405
Minimum Wavelength
(nm)
382
387
392
400
405
Maximum Wavelength
(nm)
387
392
400
405
410
3
PDS-001574 Rev 07
© 2014 Luminus Devices, Inc. - All Rights Reserved
Luminus Devices, Inc.
T
978.528.8000 • www.luminus.com
1100 Technology Park Drive • Billerica, MA 01821
CBT-120-UV Product Datasheet
CBT-120 Product Datasheet
Reference Optical & Electrical Characteristics (T
hs
= 40°C)
1,2
UV
Drive Condition
3
Parameter
Current Density
Forward Voltage
Radiometric Flux
5
Radiometric Flux Density
Wavelength Range
Peak Wavelength
FWHM
Symbol
j
V
F min
V
F
V
F max
Φ
typ
Φ
R
λ
λ
p
Δλ
1/2
1 .5
3.3
3.7
5.9
16.0
1.3
382 - 392
387
12
Symbol
Emitting Area
Emitting Area Dimensions
Dynamic Resistance
Ω
dyn
18 A
Values
4
2 .5
3.3
3.4
5.9
19.0
1.6
400 - 410
405
12
UV
12 .0
4.63 × 2.6
0 .02
18 A
Unit
A/mm
2
V
V
V
W
W/mm
2
nm
nm
nm
Unit
mm
2
mm × mm
Ω
Absolute Maximum Ratings
Symbol
Maximum Current
6
Maximum Junction Temperature
7
Storage Temperature Range
Note 1:
Note 2:
Note 3:
Data verified using NIST traceable calibration standard.
All data are based on test conditions with a constant heat sink temperature T
hs
= 40°C under pulse testing conditions. Pulse conditions: 25%
duty-cycle and frequency of 360 Hz. Nominal T
j
≈ 80°C. See Thermal Resistance section for T
j
and T
hs
definition.
Listed drive conditions are typical for common applications. CBT-120-UV devices can be driven at currents ranging from <1 A to 30 A and at duty
cycles ranging from 1% to 100%. Drive current and duty cycle should be adjusted as necessary to maintain the junction temperature desired to meet
application lifetime requirements.
Unless otherwise noted, values listed are typical. Devices are production tested and specified at 18 A.
Typical total flux from emitting area at listed peak wavelength. Reported performance is included to show trends for a selected power level. For
specific minimum and maximum values, use bin tables. For product roadmap and future performance of devices, contact Luminus.
CBT-120-UV LEDs are designed for operation to an absolute maximum current as specified above. Product lifetime data is specified at recommended
forward drive currents. Sustained operation at or beyond absolute maximum currents will result in a reduction of device life time compared to
recommended forward drive currents. Actual device lifetimes will also depend on junction temperature. Refer to the lifetime derating curves for
further information. In pulsed operation, rise time from 10-90% of forward current should be longer than 0.5 μseconds.
Lifetime dependent on LED junction temperature. Input power and thermal system must be properly managed to ensure lifetime. See charts on
page 5 for further information.
Special design considerations must be observed for operation under 1 A. Please contact Luminus for further information.
UV
30
150
-40 to +100
Unit
A
°C
°C
T
jmax
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
4
PDS-001574 Rev 07
© 2014 Luminus Devices, Inc. - All Rights Reserved
Luminus Devices, Inc.
T
978.528.8000 • www.luminus.com
1100 Technology Park Drive • Billerica, MA 01821
CBT-120-UVProduct Datasheet
CBT-120 Product
Optical & Electrical Characteristics
Relative Power vs Forward Current,
T
j
= 120°C
Normalized to
I
f
= 18 A
Relative Optical Power
1.8
1.6
Relative Power vs Junc. Temperature, I
f
= 18 A
1.2
1.15
1.1
1.05
1
0.95
0.9
0.85
0.8
40
60
80
100
120
Normalized to
T
j
= 80°C
Relative Optical Power
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
30
I
f
- Forward Current (A)
T
j
- Junction Temperature (°C)
Peak Wavelength vs Forward Current
0.2
0.1
Peak Wavelength vs Junction Temperature
3
2
Referenced to
I
f
= 18 A
Change in
λ
p
(nm)
Referenced to
T
j
= 80°C
Change in
λ
p
(nm)
0
-0.1
-0.2
-0.3
-0.4
-0.5
0
5
1
0
-1
-2
-3
I
f
- Forward Current (A)
10
15
20
25
30
40
50
T
j
- Junction Temperature (°C)
60
70
80
90
100
110
120
Forward Voltage vs Forward Current
0.3
0.2
Forward Voltage vs Junction Temperature
0.1
0.08
0.06
Referenced to
I
f
= 18 A
Change in
V
f
(Volts)
Referenced to
T
j
= 80°C
Change in
V
f
(Volts)
0.1
0
-0.1
-0.2
-0.3
-0.4
-0.5
0
5
10
15
20
25
30
0.04
0.02
0
-0.02
-0.04
-0.06
-0.08
-0.1
40
50
60
70
80
90
100
110
120
I
f
- Forward Current (A)
T
j
- Junction Temperature (°C)
5
PDS-001574 Rev 07
© 2014 Luminus Devices, Inc. - All Rights Reserved
Luminus Devices, Inc.
T
978.528.8000 • www.luminus.com
1100 Technology Park Drive • Billerica, MA 01821
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