CBT-90-UVProduct Datasheet
CBT-120 Product
Preliminary
CBT-90-UV LEDs
Features:
•
Greater than 12 W of optical power from 400 nm to 410 nm.
•
High thermal conductivity package .
›
Junction to heat sink thermal resistance of 0.9 °C/W
•
Luminus technology for very high power density and uniform surface emission
•
Large, monolithic chip with surface emitting area of 9 mm
2
•
Low-profile window for efficient coupling into small-etendue systems
•
High radiometric efficiency
•
Environmentally friendly: RoHS compliant, mercury-free
•
Variable drive currents: less than 1 A through 22.5 A
Table of Contents
Technology Overview
. . . . . .2
CBT-90 Bin Structure
. . . . . . .3
Electrical & Optical
Characteristics
. . . . . . . . . . . . .4
Lifetime, Reliability and Typical
Spectrum
. . . . . . . . . . . . . . . . . .5
Radiation Patterns
. . . . . . . . .6
Thermal Resistance
. . . . . . . .7
Mechanical Dimensions
. . . .8
Ordering Information
. . . . . .9
Applications
•
Spot-curing
•
Inspection
•
Machine Vision
•
Fiber-coupled illumination
•
Rapid Prototyping and 3D printing
•
Medical and Scientific Instrumentation
1
PDS-002171 Rev 03
© 2014 Luminus Devices, Inc. - All Rights Reserved
Luminus Devices, Inc.
•
T
978.528.8000 • www.luminus.com
1100 Technology Park Drive • Billerica, MA 01821
CBT-90-UV Product Datasheet
Technology Overview
Luminus Big Chip LEDs™ benefit from innovations in device technology, chip packaging and thermal management. This suite of
technologies give engineers and system designers the freedom to develop solutions both high in power and efficiency.
Luminus Technology
Luminus’ technology enables large area LED chips to emit
photons uniformly over the entire LED chip surface. The intense
optical power density produced by these UV LEDs™ facilitate
designs which replace arc and halogen lamps where arrays of
traditional high power LEDs cannot.
For UV devices, Luminus engineers the LEDs™ to maximize light
extraction and to emit with a Lambertian far-field distribution
pattern. The design maximizes efficiency and allows for flexible
optical designs.
Reliability
Designed from the ground up, Luminus LEDs are one of the
most reliable light sources in the world today. Big Chip LEDs
have passed a rigorous suite of environmental and mechanical
stress tests, including mechanical shock, vibration, temperature
cycling and humidity, and have been fully qualified for use in
extreme high power and high current applications. With very
low failure rates and median lifetimes that typically exceed
10,000 hours, Luminus Big Chip LEDs are ready for even the
most demanding applications.
Packaging Technology
Thermal management is critical in high power LED applications.
With a thermal resistance from junction to heat sink of 0.9°C/W,
Luminus CBT-90-UV LEDs have the lowest thermal resistance of
any LED on the market. This allows the LED to be driven at
higher current densities while maintaining a low junction
temperature, thereby resulting in brighter solutions and longer
lifetimes.
Environmental Benefits
Luminus LEDs help reduce power consumption and the amount
of hazardous waste entering the environment. All LED products
manufactured by Luminus are RoHS compliant and free of
hazardous materials, including lead and mercury.
Understanding Big Chip LED Test Specifications
Every Luminus LED is fully tested to ensure that it meets the high quality standards expected from Luminus’ products.
Testing Temperature
Luminus core board products are typically measured in such a
way that the characteristics reported agree with how the
devices will actually perform when incorporated into a system.
This measurement is accomplished by mounting the devices on
a 40ºC heat sink and measuring the device while fully powered.
This method of measurement ensures that Luminus Big Chip
LEDs perform in the field just as they are specified.
Multiple Operating Points
The tables on the following pages provide typical optical and
electrical characteristics. Since the LEDs can be operated over a
wide range of drive conditions(currents from <1A to 22.5 A, and
duty cycle from <1% to 100%), multiple drive conditions
maybe listed.
CBT-90-UV devices are production specified at 13.5 A. Driving
devices beyond recommended driving conditions shortens
lifetime (see derating curves on page 6).
2
PDS-002171 Rev 03
© 2014 Luminus Devices, Inc. - All Rights Reserved
Luminus Devices, Inc.
•
T
978.528.8000 • www.luminus.com
1100 Technology Park Drive • Billerica, MA 01821
CBT-90-UV Product Datasheet
CBT-120 Product Datasheet
CBT-90-UV Bin Structure
CBT-90 LEDs are specified for Radiant Flux (power) and wavelength at a drive current of13.5 A (1.5 A/mm
2
) and placed into one of the
following luminous flux (F) and wavelength (123) bins:
Power Bins
Color
UV
Power Flux Bin (F)
L
M
Minimum Flux (W)
12.1
13.3
Maximum Flux (W)
13.3
14.6
*Note: Luminus maintains a +/- 6% tolerance on power measurements.
Wavelength Bins
Color
UV
Wavelength Bin (123)
400
405
Minimum Wavelength
(nm)
400
405
Maximum Wavelength
(nm)
405
410
For ordering information, please refer to page 5 of CBT-90-UV Binning & Labeling Document PDS-002172.
3
PDS-002171 Rev 03
© 2014 Luminus Devices, Inc. - All Rights Reserved
Luminus Devices, Inc.
•
T
978.528.8000 • www.luminus.com
1100 Technology Park Drive • Billerica, MA 01821
CBT-90-UV Product Datasheet
CBT-120 Product Datasheet
Reference Optical & Electrical Characteristics (T
hs
= 40°C)
1,2
UV
Drive Condition
Parameter
Current Density
Forward Voltage
Radiometric Flux
4
Radiometric Flux Density
Wavelength Range
Peak Wavelength
FWHM
Symbol
J
V
F min
V
F
V
F max
Φ
typ
Φ
R
λ
λ
p
Δλ
1/2
Symbol
Emitting Area
Emitting Area Dimensions
Dynamic Resistance
Ω
dyn
Symbol
Maximum Current
5
Maximum Junction Temperature
6
Storage Temperature Range
Note 1:
Note 2:
Data verified with NIST calibration standard.
All data are based on test conditions with a constant heat sink temperature T
hs
= 40°C under pulse testing conditions. Listed drive conditions are
typical for common applications. CBT-90-UV devices can be driven at currents ranging from <1 A to 22.5 A and at duty cycles ranging from 1% to
100%. Drive current and duty cycle should be adjusted as necessary to maintain the junction temperature desired to meet application lifetime
requirements. See Thermal Resistance section for T
j
and T
hs
definition.
Unless otherwise noted, values listed are typical. Devices are production tested and specified at 13.5 A.
Total flux from emitting area at listed peak wavelength. Reported performance is included to show trends for a selected power level. For product
roadmap and future performance of devices, contact Luminus.
CBT-90-UV LEDs are designed for operation to an absolute maximum current as specified above. Product lifetime data is specified at recommended
forward drive currents. Sustained operation at or beyond absolute maximum currents will result in a reduction of device life time compared to
recommended forward drive currents. Actual device lifetimes will also depend on junction temperature. Refer to the lifetime derating curves for
further information. In pulsed operation, rise time from 10-90% of forward current should be longer than 0.5 μseconds.
Lifetime dependent on LED junction temperature. Input power and thermal system must be properly managed to ensure lifetime. See charts on
page 6 for further information.
Special design considerations must be observed for operation under 1 A. Please contact Luminus for further information.
9A
Values
3
1 .0
-
3.3
-
8.9
0.55
400 - 410
405
14
UV
9
3 × 3
0 .02
UV
22 .5
T
jmax
150
-40 to +100
13.5 A
Unit
1 .5
3.2
3.4
4.0
13.4
0.83
400 - 410
405
14
Unit
mm
2
mm × mm
Ω
Unit
A
°C
°C
A/mm
2
V
V
V
W
W/mm
2
nm
nm
nm
Absolute Maximum Ratings
Note 3:
Note 4:
Note 5:
Note 6:
Note 7:
4
PDS-002171 Rev 03
© 2014 Luminus Devices, Inc. - All Rights Reserved
Luminus Devices, Inc.
•
T
978.528.8000 • www.luminus.com
1100 Technology Park Drive • Billerica, MA 01821
CBT-90-UV Product Datasheet
CBT-120 Product Datasheet
Optical Power Characteristics
Relative Power
vs
Forward Current (I
f
)
Normalized to 13.5 A
1.8
1.6
1.4
1.05
1.1
Relative Power
vs
Junction Temperature (T
j
)
Normalized to 80°C
Relative Power
Relative Power
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
1
0.95
0.9
0.85
40
50
60
70
80
90
100
110
120
I
f
- Forward Current [Amps]
T
j
- Junction Temperature [°C]
Forward Voltage Characteristics
Change in Forward Voltage (V
f
) vs Forward Current (I
f
)
Referenced to 13.5 A
0.4
0.12
0.1
0.08
0.06
0.04
0.02
0
-0.02
-0.04
-0.06
-0.08
-0.1
0
5
10
15
20
25
40
50
60
70
80
90
100
110
120
Change in Forward Voltage (V
f
)
vs
Junction Temperature (T
j
)
Referenced to 80°C
Change in Forward Voltage [Volts]
0.2
0
-0.2
-0.4
-0.6
-0.8
Change in Forward Voltage [Volts]
I
f
- Forward Current [Amps]
T
j
- Junction Temperature [°C]
Peak Wavelength Characteristics
Change in Peak Wavelength (λ
p
)
vs
Forward Current (I
f
)
Referenced to 13.5 A
1.5
2.5
2
1.5
1
0.5
0
-0.5
-1
-1.5
-2
-2.5
0
5
10
15
20
25
40
50
60
70
80
90
100
110
120
Change in Peak Wavelength (λ
p
)
vs
Temperature (T
j
)
Referenced to 80°C
Change in Peak Wavelength [nm]
1
0.5
0
-0.5
-1
-1.5
I
f
- Forward Current [Amps]
Change in Peak Wavelength [nm]
T
j
- Junction Temperature [°C]
5
PDS-002171 Rev 03
© 2014 Luminus Devices, Inc. - All Rights Reserved
Luminus Devices, Inc.
•
T
978.528.8000 • www.luminus.com
1100 Technology Park Drive • Billerica, MA 01821
