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CD40147BFMSR

4000/14000/40000 SERIES, 10-BIT ENCODER, CDIP16, FRIT SEALED, DIP-16

器件类别:逻辑    逻辑   

厂商名称:Intersil ( Renesas )

厂商官网:http://www.intersil.com/cda/home/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
Objectid
1530484734
零件包装代码
DIP
包装说明
DIP, DIP16,.3
针数
16
Reach Compliance Code
not_compliant
系列
4000/14000/40000
JESD-30 代码
R-GDIP-T16
JESD-609代码
e0
长度
19.05 mm
逻辑集成电路类型
ENCODER
位数
10
功能数量
1
端子数量
16
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
CERAMIC, GLASS-SEALED
封装代码
DIP
封装等效代码
DIP16,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
电源
5/15 V
传播延迟(tpd)
1215 ns
认证状态
Not Qualified
筛选级别
MIL-PRF-38535 Class V
座面最大高度
4.62 mm
标称供电电压 (Vsup)
5 V
表面贴装
NO
技术
CMOS
温度等级
MILITARY
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
总剂量
100k Rad(Si) V
宽度
7.62 mm
文档预览
CD40147BMS
December 1992
10 Line to 4 Line BCD Priority Encoder
Pinout
CD40147BMS
TOP VIEW
Features
• High Voltage Type (20V Rating)
• Encodes 10 Line to 4 Line BCD
• Active Low Inputs and Outputs
• 100% Tested for Quiescent Current at 20V
• 5V, 10V and 15V Parametric Ratings
• Maximum Input Current of 1µA at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25
o
C
• Noise Margin (Over Full Package/Temperature Range)
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• Standardized Symmetrical Output Characteristics
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
4 1
5 2
6 3
7 4
8 5
C 6
B 7
VSS 8
16 VDD
15 0
14 D
13 3
12 2
11 1
10 9
9 A
Functional Diagram
Applications
• Keyboard Encoding
• 10 Line to BCD Encoding
• Range Selection
9
0
PRIORITY
SELECT
BCD
ENCODER
D
C
B
A
2
3
2
2
2
1
2
0
Description
CD40147BMS CMOS encoder features priority encoding of
the inputs to ensure that only the highest order data line is
encoded. Ten data input lines (0-9) are encoded to four line (8,
4, 2, 1) BCD. The highest priority line is line 9. All four output
lines are logic 1 (VSS) when all input lines are logic 0. All
inputs and outputs are buffered, and each output can drive
one TTL low power Schottky load. The CD40147BMS is func-
tionally similar to the TTL 54/74147 if pin 15 is tied low.
The CD40147BMS is supplied in these 16-lead outline
packages:
Braze Seal DIP
Frit Seal DIP
Ceramic Flatpack
H4T
H1E
H6W
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
File Number
3357
7-71
Specifications CD40147BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
o
C
At Distance 1/16
±
1/32 Inch (1.59mm
±
0.79mm) from case for
10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . .
θ
ja
θ
jc
o
C/W
o
C/W
Ceramic DIP and FRIT Package . . . . . 80
20
Flatpack Package . . . . . . . . . . . . . . . . 70
o
C/W
20
o
C/W
Maximum Package Power Dissipation (PD) at +125
o
C
For T
A
= -55
o
C to +100
o
C (Package Type D, F, K) . . . . . . 500mW
For T
A
= +100
o
C to +125
o
C (Package Type D, F, K). . . . . . Derate
Linearity at 12mW/
o
C to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For T
A
= Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGROUPS
1
2
VDD = 18V, VIN = VDD or GND
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
3
1
2
VDD = 18V
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
3
1
2
VDD = 18V
Output Voltage
Output Voltage
Output Current (Sink)
Output Current (Sink)
Output Current (Sink)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Output Current (Source)
N Threshold Voltage
P Threshold Voltage
Functional
VOL15
VOH15
IOL5
IOL10
IOL15
IOH5A
IOH5B
IOH10
IOH15
VNTH
VPTH
F
VDD = 15V, No Load
VDD = 15V, No Load (Note 3)
VDD = 5V, VOUT = 0.4V
VDD = 10V, VOUT = 0.5V
VDD = 15V, VOUT = 1.5V
VDD = 5V, VOUT = 4.6V
VDD = 5V, VOUT = 2.5V
VDD = 10V, VOUT = 9.5V
VDD = 15V, VOUT = 13.5V
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VDD = 2.8V, VIN = VDD or GND
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
VIL
VIH
VIL
VIH
VDD = 5V, VOH > 4.5V, VOL < 0.5V
VDD = 5V, VOH > 4.5V, VOL < 0.5V
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
3
1, 2, 3
1, 2, 3
1
1
1
1
1
1
1
1
1
7
7
8A
8B
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C
-55
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
-
-100
-1000
-100
-
-
-
-
MAX
2
200
2
-
-
-
100
1000
100
50
-
-
-
-
-0.53
-1.8
-1.4
-3.5
-0.7
2.8
UNITS
µA
µA
µA
nA
nA
nA
nA
nA
nA
mV
V
mA
mA
mA
mA
mA
mA
mA
V
V
V
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
(NOTE 1)
VDD = 20V, VIN = VDD or GND
+25
o
C, +125
o
C, -55
o
C 14.95
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
-
3.5
-
11
0.53
1.4
3.5
-
-
-
-
-2.8
0.7
VOH > VOL <
VDD/2 VDD/2
1.5
-
4
-
V
V
V
V
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
7-72
Specifications CD40147BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGROUPS TEMPERATURE
9
10, 11
VDD = 5V, VIN = VDD or GND
9
10, 11
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
LIMITS
MIN
-
-
-
-
MAX
900
1215
200
270
UNITS
ns
ns
ns
ns
PARAMETER
Propagation Delay
In Phase Output
Transition Time
SYMBOL
TPHL1
TPLH1
TTHL
TTLH
CONDITIONS
(NOTE 1, 2)
VDD = 5V, VIN = VDD or GND
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55
o
C and +125
o
C limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
VDD = 5V, VIN = VDD or GND
NOTES
1, 2
TEMPERATURE
-55
o
C, +25
o
C
+125
o
C
VDD = 10V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
+125
o
C
VDD = 15V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
+125
o
C
Output Voltage
Output Voltage
Output Voltage
Output Voltage
Output Current (Sink)
VOL
VOL
VOH
VOH
IOL5
VDD = 5V, No Load
VDD = 10V, No Load
VDD = 5V, No Load
VDD = 10V, No Load
VDD = 5V, VOUT = 0.4V
1, 2
1, 2
1, 2
1, 2
1, 2
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+125
o
C
-55
o
C
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1, 2
+125
o
C
-55
o
C
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1, 2
+125
o
C
-55
o
C
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1, 2
+125
o
C
-55
o
C
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1, 2
+125
o
C
-55
o
C
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1, 2
+125
o
C
-55
o
C
Output Current (Source)
IOH15
VDD =15V, VOUT = 13.5V
1, 2
+125
o
C
-55
o
C
Input Voltage Low
Input Voltage High
VIL
VIH
VDD = 10V, VOH > 9V, VOL < 1V
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
1, 2
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
MIN
-
-
-
-
-
-
-
-
4.95
9.95
0.36
0.64
0.9
1.6
2.4
4.2
-
-
-
-
-
-
-
-
-
+7
MAX
1
30
2
60
2
120
50
50
-
-
-
-
-
-
-
-
-0.36
-0.64
-1.15
-2.0
-0.9
-1.6
-2.4
-4.2
3
-
UNITS
µA
µA
µA
µA
µA
µA
mV
mV
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
7-73
Specifications CD40147BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
LIMITS
PARAMETER
Propagation Delay
In Phase Output
Propagation Delay
Out of Phase Output
SYMBOL
TPHL
TPLH
TPHL
TPLH
CONDITIONS
VDD = 10V
VDD = 15V
VDD = 5V
VDD = 10V
VDD = 15V
Transition Time
TTLH
VDD = 10V
VDD = 15V
Input Capacitance
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
CIN
Any Input
NOTES
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
-
-
-
-
-
-
-
MAX
400
300
850
350
250
100
80
7.5
UNITS
ns
ns
ns
ns
ns
ns
ns
pF
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
N Threshold Voltage
N Threshold Voltage
Delta
P Threshold Voltage
P Threshold Voltage
Delta
Functional
SYMBOL
IDD
VNTH
∆VTN
VTP
∆VTP
F
CONDITIONS
VDD = 20V, VIN = VDD or GND
VDD = 10V, ISS = -10µA
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VSS = 0V, IDD = 10µA
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
NOTES
1, 4
1, 4
1, 4
1, 4
1, 4
1
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
-2.8
-
0.2
-
VOH >
VDD/2
-
MAX
7.5
-0.2
±1
2.8
±1
VOL <
VDD/2
1.35 x
+25
o
C
Limit
UNITS
µA
V
V
V
V
V
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
o
C
PARAMETER
Supply Current - MSI-1
Output Current (Sink)
Output Current (Source)
SYMBOL
IDD
IOL5
IOH5A
±
0.2µA
±
20% x Pre-Test Reading
±
20% x Pre-Test Reading
DELTA LIMIT
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
Initial Test (Pre Burn-In)
Interim Test 1 (Post Burn-In)
Interim Test 2 (Post Burn-In)
MIL-STD-883
METHOD
100% 5004
100% 5004
100% 5004
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9
1, 7, 9
READ AND RECORD
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
7-74
Specifications CD40147BMS
TABLE 6. APPLICABLE SUBGROUPS
(Continued)
CONFORMANCE GROUP
PDA (Note 1)
Interim Test 3 (Post Burn-In)
PDA (Note 1)
Final Test
Group A
Group B
Subgroup B-5
Subgroup B-6
Group D
MIL-STD-883
METHOD
100% 5004
100% 5004
100% 5004
100% 5004
Sample 5005
Sample 5005
Sample 5005
Sample 5005
GROUP A SUBGROUPS
1, 7, 9, Deltas
1, 7, 9
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
1, 2, 3, 8A, 8B, 9
Subgroups 1, 2 3
Subgroups 1, 2, 3, 9, 10, 11
IDD, IOL5, IOH5A
READ AND RECORD
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
MIL-STD-883
METHOD
5005
TEST
PRE-IRRAD
1, 7, 9
POST-IRRAD
Table 4
READ AND RECORD
PRE-IRRAD
1, 9
POST-IRRAD
Table 4
CONFORMANCE GROUPS
Group E Subgroup 2
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
FUNCTION
Static Burn-In 1
Note 1
Static Burn-In 2
Note 1
Dynamic Burn-
In Note 1
Irradiation
Note 2
NOTE:
1. Each pin except VDD and GND will have a series resistor of 10K
±
5%, VDD = 18V
±
0.5V
2. Each pin except VDD and GND will have a series resistor of 47K
±
5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V
±
0.5V
OPEN
6, 7, 9, 14
6, 7, 9, 14
-
6, 7, 9, 14
GROUND
1-5, 8, 10-13, 15
8
8
8
VDD
16
1-5, 10-13, 15, 16
16
1-5, 10-13, 15, 16
6, 7, 9, 14
1, 3, 11, 13
2, 4, 5, 10, 12, 15
9V
±
-0.5V
50kHz
25kHz
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
75
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参数对比
与CD40147BFMSR相近的元器件有:。描述及对比如下:
型号 CD40147BFMSR
描述 4000/14000/40000 SERIES, 10-BIT ENCODER, CDIP16, FRIT SEALED, DIP-16
是否Rohs认证 不符合
Objectid 1530484734
零件包装代码 DIP
包装说明 DIP, DIP16,.3
针数 16
Reach Compliance Code not_compliant
系列 4000/14000/40000
JESD-30 代码 R-GDIP-T16
JESD-609代码 e0
长度 19.05 mm
逻辑集成电路类型 ENCODER
位数 10
功能数量 1
端子数量 16
最高工作温度 125 °C
最低工作温度 -55 °C
封装主体材料 CERAMIC, GLASS-SEALED
封装代码 DIP
封装等效代码 DIP16,.3
封装形状 RECTANGULAR
封装形式 IN-LINE
电源 5/15 V
传播延迟(tpd) 1215 ns
认证状态 Not Qualified
筛选级别 MIL-PRF-38535 Class V
座面最大高度 4.62 mm
标称供电电压 (Vsup) 5 V
表面贴装 NO
技术 CMOS
温度等级 MILITARY
端子面层 Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE
端子节距 2.54 mm
端子位置 DUAL
总剂量 100k Rad(Si) V
宽度 7.62 mm
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