CD4512BMS
December 1992
CMOS Dual 4-Bit Latch
Pinout
CD4512BMS
TOP VIEW
D0 1
D1 2
D2 3
D3 4
D4 5
D5 6
D6 7
VSS 8
16 VDD
15 3-STATE DISABLE
14 SEL. OUTPUT
13 C
12 B
11 A
10 INHIBIT
9 D7
Features
• High-Voltage Types (20-Volt Rating)
• 3-State Outputs
• Standardized, Symmetrical Output Characteristics
• 100% Tested for Quiescent Current at 20V
• 5V, 10V, and 15V Parametric Ratings
• Maximum Input Current of 1µA at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and 25
o
C
• Noise Margin (Full Package-Temperature Range):
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• Meets all Requirements of JEDEC Tentative Standard
No. 13B, "Standard Specifications for Description of
‘B’ Series CMOS Devices"
Functional Diagram
3-STATE DISABLE
INHIBIT
D0-1
D1-2
D2-3
CHANNELS
INPUTS
D3-4
D4-5
D5-6
D6-7
D7-9
A-11
SELECT
CONTROL
B-12
C-13
VDD = 16
VSS = 8
14 SELECT
OUTPUT
10
15
Applications
• Digital Multiplexing
• Number-sequence Generation
• Signal Gating
Description
CD4512BMS is an 8-channel data selector featuring a three-
state output that can interface directly with, and drive, data
lines of bus-oriented systems.
The CD4512BMS is supplied in these 16 lead outline
packages:
Braze Seal DIP
Frit Seal DIP
Ceramic Flatpack
H4S
H1E
H3X
CD4512BMS
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
File Number
3340
7-1180
Specifications CD4512BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
o
C
At Distance 1/16
±
1/32 Inch (1.59mm
±
0.79mm) from case for
10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . .
θ
ja
θ
jc
Ceramic DIP and FRIT Package . . . . . 80
o
C/W
20
o
C/W
Flatpack Package . . . . . . . . . . . . . . . . 70
o
C/W
20
o
C/W
Maximum Package Power Dissipation (PD) at +125
o
C
For T
A
= -55
o
C to +100
o
C (Package Type D, F, K) . . . . . . 500mW
For T
A
= +100
o
C to +125
o
C (Package Type D, F, K). . . . . . Derate
Linearity at 12mW/
o
C to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For T
A
= Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGROUPS
1
2
VDD = 18V, VIN = VDD or GND
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
VDD = 18V
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
VDD = 18V
Output Voltage
Output Voltage
Output Current (Sink)
Output Current (Sink)
Output Current (Sink)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Output Current (Source)
N Threshold Voltage
P Threshold Voltage
Functional
VOL15
VOH15
IOL5
IOL10
IOL15
IOH5A
IOH5B
IOH10
IOH15
VNTH
VPTH
F
VDD = 15V, No Load
VDD = 15V, No Load (Note 3)
VDD = 5V, VOUT = 0.4V
VDD = 10V, VOUT = 0.5V
VDD = 15V, VOUT = 1.5V
VDD = 5V, VOUT = 4.6V
VDD = 5V, VOUT = 2.5V
VDD = 10V, VOUT = 9.5V
VDD = 15V, VOUT = 13.5V
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VDD = 2.8V, VIN = VDD or GND
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
Tri-State Output
Leakage
VIL
VIH
VIL
VIH
IOZL
VDD = 5V, VOH > 4.5V, VOL < 0.5V
VDD = 5V, VOH > 4.5V, VOL < 0.5V
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
VIN = VDD or GND
VOUT = 0V
VDD = 20V
VDD = 18V
Tri-State Output
Leakage
IOZH
VIN = VDD or GND
VOUT = VDD
VDD = 20V
VDD = 18V
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
3
1
2
3
1
2
3
1, 2, 3
1, 2, 3
1
1
1
1
1
1
1
1
1
7
7
8A
8B
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
2
3
1
2
3
+25
o
C,
LIMITS
TEMPERATURE
+25 C
+125
o
C
-55
o
C
o
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
(NOTE 1)
VDD = 20V, VIN = VDD or GND
MIN
-
-
-
-100
-1000
-100
-
-
-
-
14.95
0.53
1.4
3.5
-
-
-
-
-2.8
0.7
MAX
10
1000
10
-
-
-
100
1000
100
50
-
-
-
-
-0.53
-1.8
-1.4
-3.5
-0.7
2.8
UNITS
µA
µA
µA
nA
nA
nA
nA
nA
nA
mV
V
mA
mA
mA
mA
mA
mA
mA
V
V
V
+25
o
C
+125 C
-55
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C, +125
o
C, -55
o
C
+125
o
C,
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C
+125
o
C
-55
o
C
-55
o
C
o
VOH > VOL <
VDD/2 VDD/2
-
3.5
-
11
-0.4
-12
-0.4
-
-
-
1.5
-
4
-
-
-
-
0.4
12
0.4
V
V
V
V
µA
µA
µA
µA
µA
µA
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
7-1181
Specifications CD4512BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGROUPS TEMPERATURE
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
10, 11
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
LIMITS
MIN
-
-
-
-
-
-
-
-
-
-
-
-
MAX
280
378
400
540
360
486
120
162
120
162
200
270
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
Propagation Delay
Inhibit to Output
Propagation Delay
“A” Select to Output
Propagation Delay
Data to Output
Propagation Delay
3-State Disable
Propagation Delay
3-State Disable
Transition Time
SYMBOL
TPHL1
TPLH1
TPHL2
TPLH2
TPHL3
TPLH3
TPHZ
TPZH
TPLZ
TPZL
TTHL
TTLH
CONDITIONS
VDD = 5V, VIN = VDD or GND
(Note 1, 2)
VDD = 5V, VIN = VDD or GND
(Note 1, 2)
VDD = 5V, VIN = VDD or GND
(Note 1, 2)
VDD = 5V, VIN = VDD or GND
(Note 2, 3)
VDD = 5V, VIN = VDD or GND
(Note 2, 3)
VDD = 5V, VIN = VDD or GND
(Note 2, 3)
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
VDD = 5V, VIN = VDD or GND
NOTES
1, 2
TEMPERATURE
-55
o
C, +25
o
C
+125
o
C
VDD = 10V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
+125
o
C
VDD = 15V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
+125
o
C
Output Voltage
Output Voltage
Output Voltage
Output Voltage
Output Current (Sink)
VOL
VOL
VOH
VOH
IOL5
VDD = 5V, No Load
VDD = 10V, No Load
VDD = 5V, No Load
VDD = 10V, No Load
VDD = 5V, VOUT = 0.4V
1, 2
1, 2
1, 2
1, 2
1, 2
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+125
o
C
-55
o
C
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1, 2
+125
o
C
-55
o
C
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1, 2
+125
o
C
-55
o
C
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1, 2
+125
o
C
-55
o
C
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1, 2
+125
o
C
-55
o
C
MIN
-
-
-
-
-
-
-
-
4.95
9.95
0.36
0.64
0.9
1.6
2.4
4.2
-
-
-
-
MAX
5
150
10
300
10
600
50
50
-
-
-
-
-
-
-
-
-0.36
-0.64
-1.15
-2.0
UNITS
µA
µA
µA
µA
µA
µA
mV
mV
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
7-1182
Specifications CD4512BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
Output Current (Source)
SYMBOL
IOH10
CONDITIONS
VDD = 10V, VOUT = 9.5V
NOTES
1, 2
TEMPERATURE
+125
o
C
-55
o
C
Output Current (Source)
IOH15
VDD =15V, VOUT = 13.5V
1, 2
+125
o
C
-55
o
C
Input Voltage Low
Input Voltage High
Propagation Delay
Inhibit to Output
Propagation Delay
“A” Select ot Output
Propagation Delay
Data to Output
Propagation Delay
3-State Enable
Propagation Delay
3-State Enable
Transition Time
VIL
VIH
TPHL1
TPLH1
TPHL2
TPLH2
TPHL3
TPLH3
TPHZ
TPZH
TPLZ
TPZL
TTHL
TTLH
CIN
VDD = 10V, VOH > 9V, VOL <
1V
VDD = 10V, VOH > 9V, VOL <
1V
VDD = 10V
VDD = 15V
VDD = 10V
VDD = 15V
VDD = 10V
VDD = 15V
VDD = 10V
VDD = 15V
VDD = 10V
VDD = 15V
VDD = 10V
VDD = 15V
Any Input
1, 2
1, 2
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 3
1, 2, 3
1, 2
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
-
-
-
-
+7
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
-0.9
-1.6
-2.4
-4.2
3
-
140
100
170
120
150
110
60
40
60
40
100
80
7.5
UNITS
mA
mA
mA
mA
V
V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
pF
Input Capacitance
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. CL = 50pF, RL = 1K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
N Threshold Voltage
N Threshold Voltage
Delta
P Threshold Voltage
P Threshold Voltage
Delta
Functional
SYMBOL
IDD
VNTH
∆VTN
VTP
∆VTP
F
CONDITIONS
VDD = 20V, VIN = VDD or GND
VDD = 10V, ISS = -10µA
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VSS = 0V, IDD = 10µA
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
NOTES
1, 4
1, 4
1, 4
1, 4
1, 4
1
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
-2.8
-
0.2
-
VOH >
VDD/2
-
MAX
25
-0.2
±1
2.8
±1
VOL <
VDD/2
1.35 x
+25
o
C
Limit
UNITS
µA
V
V
V
V
V
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
7-1183
Specifications CD4512BMS
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
o
C
PARAMETER
Supply Current - MSI-2
Output Current (Sink)
Output Current (Source)
SYMBOL
IDD
IOL5
IOH5A
±
1.0µA
±
20% x Pre-Test Reading
±
20% x Pre-Test Reading
DELTA LIMIT
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
Initial Test (Pre Burn-In)
Interim Test 1 (Post Burn-In)
Interim Test 2 (Post Burn-In)
PDA (Note 1)
Interim Test 3 (Post Burn-In)
PDA (Note 1)
Final Test
Group A
Group B
Subgroup B-5
Subgroup B-6
Group D
MIL-STD-883
METHOD
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
Sample 5005
Sample 5005
Sample 5005
Sample 5005
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
1, 2, 3, 8A, 8B, 9
Subgroups 1, 2 3
Subgroups 1, 2, 3, 9, 10, 11
IDD, IOL5, IOH5A
READ AND RECORD
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
MIL-STD-883
METHOD
5005
TEST
PRE-IRRAD
1, 7, 9
POST-IRRAD
Table 4
READ AND RECORD
PRE-IRRAD
1, 9
POST-IRRAD
Table 4
CONFORMANCE GROUPS
Group E Subgroup 2
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
FUNCTION
Static Burn-In 1
Note 1
Static Burn-In 2
Note 1
Dynamic Burn-
In Note 1
Irradiation
Note 2
NOTES:
1. Each pin except VDD and GND will have a series resistor of 10K
±
5%, VDD = 18V
±
0.5V
2. Each pin except VDD and GND will have a series resistor of 47K
±
5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD
= 10V
±
0.5V
OPEN
14
14
-
GROUND
1-13, 15
8
8, 10, 15
VDD
16
1-7, 9-13, 15, 16
16
14
1-7, 9, 11, 12
13
9V
±
-0.5V
50kHz
25kHz
7-1184
模拟电子
