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CD4518BMS

Decade Counter

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厂商名称:Renesas(瑞萨电子)

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器件参数
参数名称
属性值
包装说明
,
Reach Compliance Code
compliant
逻辑集成电路类型
DECADE COUNTER
Base Number Matches
1
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CD4518BMS,
CD4520BMS
December 1992
CMOS Dual Up Counters
Pinout
CD4518BMS, CD4520BMS
TOP VIEW
Features
• High Voltage Types (20V Rating)
• CD4518BMS Dual BCD Up Counter
• CD4520BMS Dual Binary Up Counter
• Medium Speed Operation
- 6MHz Typical Clock Frequency at 10V
• Positive or Negative Edge Triggering
• Synchronous Internal Carry Propagation
• 100% Tested for Quiescent Current at 20V
• 5V, 10V and 15V Parametric Ratings
• Maximum Input Current of 1µA at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25
o
C
• Noise Margin (Over Full Package/Temperature Range)
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• Standardized Symmetrical Output Characteristics
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
CLOCK A
ENABLE A
Q1A
Q2A
Q3A
Q4A
RESET A
VSS
1
2
3
4
5
6
7
8
16 VDD
15 RESET B
14 Q4B
13 Q3B
12 Q2B
11 Q1B
10 ENABLE B
9 CLOCK B
Functional Diagram
Applications
3
• Multistage Synchronous Counting
• Multistage Ripple Counting
• Frequency Dividers
CLOCK A
1
ENABLE A
2
C
÷
10/
÷
16
Q1A
Q2A
Q3A
Q4A
4
5
6
Description
CD4518BMS Dual BCD Up Counter and CD4520BMS Dual
Binary Up Counter each consist of two identical, internally
synchronous 4-stage counters. The counter stages are
D-type flip-flops having interchangeable CLOCK and
ENABLE lines for incrementing on either the positive-going
or negative-going transition. For single unit operation the
ENABLE input is maintained high and the counter advances
on each positive-going transition of the CLOCK. The
counters are cleared by high levels on their RESET lines.
The counter can be cascaded in the ripple mode by connect-
ing Q4 to the enable input of the subsequent counter while
the CLOCK input of the latter is held low.
The CD4518BMS and CD4520BMS are supplied in these
16-lead outline packages:
Braze Seal DIP
Frit Seal DIP
Ceramic Flatpack
*CD4518B Only
H4S
H1F
*H6P †H6W
†CD4520B Only
RESET A
7
R
11
CLOCK B
9
ENABLE B
10
C
÷
10/
÷
16
Q1B
12
13
14
Q2B
Q3B
Q4B
R
RESET B
15
VSS = 8
VDD = 16
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
File Number
3342
7-1206
Specifications CD4518BMS, CD4520BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
o
C
At Distance 1/16
±
1/32 Inch (1.59mm
±
0.79mm) from case for
10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . .
θ
ja
θ
jc
o
C/W
o
C/W
Ceramic DIP and FRIT Package . . . . . 80
20
Flatpack Package . . . . . . . . . . . . . . . . 70
o
C/W
20
o
C/W
Maximum Package Power Dissipation (PD) at +125
o
C
For T
A
= -55
o
C to +100
o
C (Package Type D, F, K) . . . . . . 500mW
For T
A
= +100
o
C to +125
o
C (Package Type D, F, K). . . . . . Derate
Linearity at 12mW/
o
C to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For T
A
= Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGROUPS
1
2
VDD = 18V, VIN = VDD or GND
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
3
1
2
VDD = 18V
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
3
1
2
VDD = 18V
Output Voltage
Output Voltage
Output Current (Sink)
Output Current (Sink)
Output Current (Sink)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Output Current (Source)
N Threshold Voltage
P Threshold Voltage
Functional
VOL15
VOH15
IOL5
IOL10
IOL15
IOH5A
IOH5B
IOH10
IOH15
VNTH
VPTH
F
VDD = 15V, No Load
VDD = 15V, No Load (Note 3)
VDD = 5V, VOUT = 0.4V
VDD = 10V, VOUT = 0.5V
VDD = 15V, VOUT = 1.5V
VDD = 5V, VOUT = 4.6V
VDD = 5V, VOUT = 2.5V
VDD = 10V, VOUT = 9.5V
VDD = 15V, VOUT = 13.5V
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VDD = 2.8V, VIN = VDD or GND
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
VIL
VIH
VIL
VIH
VDD = 5V, VOH > 4.5V, VOL < 0.5V
VDD = 5V, VOH > 4.5V, VOL < 0.5V
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
3
1, 2, 3
1, 2, 3
1
1
1
1
1
1
1
1
1
7
7
8A
8B
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C
-55
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
-
-100
-1000
-100
-
-
-
-
MAX
10
1000
10
-
-
-
100
1000
100
50
-
-
-
-
-0.53
-1.8
-1.4
-3.5
-0.7
2.8
UNITS
µA
µA
µA
nA
nA
nA
nA
nA
nA
mV
V
mA
mA
mA
mA
mA
mA
mA
V
V
V
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
(NOTE 1)
VDD = 20V, VIN = VDD or GND
+25
o
C, +125
o
C, -55
o
C 14.95
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
-
3.5
-
11
0.53
1.4
3.5
-
-
-
-
-2.8
0.7
VOH > VOL <
VDD/2 VDD/2
1.5
-
4
-
V
V
V
V
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
7-1207
Specifications CD4518BMS, CD4520BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGROUPS TEMPERATURE
9
10, 11
VDD = 5V, VIN = VDD or GND
9
10, 11
TTHL
TTLH
FCL
VDD = 5V, VIN = VDD or GND
9
10, 11
VDD = 5V, VIN = VDD or GND
9
10, 11
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C,
-55
o
C
o
LIMITS
MIN
-
-
-
-
-
-
1.5
1.11
MAX
560
756
650
878
200
270
-
-
UNITS
ns
ns
ns
ns
ns
ns
MHz
MHz
PARAMETER
Propagation Delay
Clock to Output
Propagation Delay
Reset to Ouput
Transition Time
(Note 2)
Maximum Clock Input
Frequency
NOTES:
SYMBOL
TPHL1
TPLH1
TPHL2
CONDITIONS
(NOTE 1, 2)
VDD = 5V, VIN = VDD or GND
+25 C
+125
o
C, -55
o
C
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55
o
C and +125
o
C limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
VDD = 5V, VIN = VDD or GND
VDD = 10V, VIN = VDD or GND
VDD = 15V, VIN = VDD or GND
Output Voltage
Output Voltage
Output Voltage
Output Voltage
Output Current (Sink)
Output Current (Sink)
Output Current (Sink)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Input Voltage Low
Input Voltage High
VOL
VOL
VOH
VOH
IOL5
IOL10
IOL15
IOH5A
IOH5B
IOH10
IOH15
VIL
VIH
VDD = 5V, No Load
VDD = 10V, No Load
VDD = 5V, No Load
VDD = 10V, No Load
VDD = 5V, VOUT = 0.4V
VDD = 10V, VOUT = 0.5V
VDD = 15V, VOUT = 1.5V
VDD = 5V, VOUT = 4.6V
VDD = 5V, VOUT = 2.5V
VDD = 10V, VOUT = 9.5V
VDD =15V, VOUT = 13.5V
VDD = 10V, VOH > 9V, VOL < 1V
VDD = 10V, VOH > 9V, VOL < 1V
NOTES
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
TEMPERATURE
-55
o
C, +25
o
C
+125 C
-55 C, +25 C
+125
o
C
-55
o
C, +25
o
C
+125 C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+125
o
C
-55
o
C
+125
o
C
-55
o
C
+125
o
C
o
o
o
o
MIN
-
-
-
-
-
-
-
-
4.95
9.95
0.36
0.64
0.9
1.6
2.4
4.2
-
-
-
-
-
-
-
-
-
+7
MAX
5
150
10
300
10
600
50
50
-
-
-
-
-
-
-
-
-0.36
-0.64
-1.15
-2.0
-0.9
-1.6
-2.4
-4.2
3
-
UNITS
µA
µA
µA
µA
µA
µA
mV
mV
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
-55
o
C
+125
o
C
-55
o
C
+125
o
C
-55
o
C
+125
o
C
-55
o
C
+125
o
C
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
7-1208
Specifications CD4518BMS, CD4520BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
Propagation Delay
Clock to Output
Propagation Delay
Reset to Output
Transition Time
Maximum Clock Input
Frequency
Maximum Clock Rise and
Fall Time
SYMBOL
TPHL1
TPLH1
TPHL2
TTHL
TTLH
FCL
TRCL
TFCL
CONDITIONS
VDD = 10V
VDD = 15V
VDD = 10V
VDD = 15V
VDD = 10V
VDD = 15V
VDD = 10V
VDD = 15V
VDD = 5V
VDD = 10V
VDD = 15V
Minimum Enable Pulse
Width
TW
VDD = 5V
VDD = 10V
VDD = 15V
Minimum Reset Pulse
Width
TW
VDD = 5V
VDD = 10V
VDD = 15V
Minimum Clock Pulse
Width
TW
VDD = 5V
VDD = 10V
VDD = 15V
Input Capacitance
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. If more than one unit is cascaded, TRCL should be made less than or equal to the sumof the transition time and the fixed propagation
delay of the output of the driving stage for the estimated capacitive load.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
N Threshold Voltage
N Threshold Voltage
Delta
P Threshold Voltage
P Threshold Voltage
Delta
Functional
SYMBOL
IDD
VNTH
∆VTN
VTP
∆VTP
F
CONDITIONS
VDD = 20V, VIN = VDD or GND
VDD = 10V, ISS = -10µA
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VSS = 0V, IDD = 10µA
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
NOTES
1, 4
1, 4
1, 4
1, 4
1, 4
1
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
-2.8
-
0.2
-
VOH >
VDD/2
-
MAX
25
-0.2
±1
2.8
±1
VOL <
VDD/2
1.35 x
+25
o
C
Limit
UNITS
µA
V
V
V
V
V
CIN
Any Input
NOTES
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3, 4
1, 2, 3, 4
1, 2, 3, 4
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2
TEMPERATURE
+25
o
C
+25 C
+25 C
+25
o
C
+25 C
+25 C
+25
o
C
+25
o
C
+25 C
+25
o
C
+25
o
C
+25 C
+25
o
C
+25
o
C
+25 C
+25
o
C
+25
o
C
+25 C
+25 C
+25
o
C
+25
o
C
o
o
o
o
o
o
o
o
o
MIN
-
-
-
-
-
-
3
4
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
230
160
225
170
100
80
-
-
15
5
5
400
200
140
250
110
80
200
100
70
7.5
UNITS
ns
ns
ns
ns
ns
ns
MHz
MHz
µs
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
pF
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
7-1209
Specifications CD4518BMS, CD4520BMS
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
o
C
PARAMETER
Supply Current - MSI-2
Output Current (Sink)
Output Current (Source)
SYMBOL
IDD
IOL5
IOH5A
±
1.0µA
±
20% x Pre-Test Reading
±
20% x Pre-Test Reading
DELTA LIMIT
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
Initial Test (Pre Burn-In)
Interim Test 1 (Post Burn-In)
Interim Test 2 (Post Burn-In)
PDA (Note 1)
Interim Test 3 (Post Burn-In)
PDA (Note 1)
Final Test
Group A
Group B
Subgroup B-5
Subgroup B-6
Group D
MIL-STD-883
METHOD
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
Sample 5005
Sample 5005
Sample 5005
Sample 5005
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
1, 2, 3, 8A, 8B, 9
Subgroups 1, 2 3
Subgroups 1, 2, 3, 9, 10, 11
IDD, IOL5, IOH5A
READ AND RECORD
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
MIL-STD-883
METHOD
5005
TEST
PRE-IRRAD
1, 7, 9
POST-IRRAD
Table 4
READ AND RECORD
PRE-IRRAD
1, 9
POST-IRRAD
Table 4
CONFORMANCE GROUPS
Group E Subgroup 2
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
FUNCTION
Static Burn-In 1
Note 1
Static Burn-In 2
Note 1
Dynamic Burn-
In Note 1
Irradiation
Note 2
NOTES:
1. Each pin except VDD and GND will have a series resistor of 10K
±
5%, VDD = 18V
±
0.5V
2. Each pin except VDD and GND will have a series resistor of 47K
±
5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V
±
0.5V
OPEN
3-6, 11-14
3-6, 11-14
-
3-6, 11-14
GROUND
1, 2, 7-10, 15
8
7, 8, 15
8
VDD
16
1, 2, 7, 9, 10,
15, 16
2, 10, 16
1, 2, 7, 9, 10,
15, 16
3-6, 11-14
1, 9
9V
±
-0.5V
50kHz
25kHz
7-1210
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