Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
500-6000 MHz
Dual, Ultra Low Noise, High IP3 Amplifier
May 2006 - Rev 24-May-06
CDQ0303-QS
Typical Performance
OIP3 and P
1dB
vs. Bias at 2GHz
35
OIP3
30
30
OIP3
1,2
35
OIP3 and P
1dB
vs. I
DSQ
at 1GHz
1,2
25
OIP3, P
1dB
(dBm)
OIP3, P
1dB
(dBm)
25
20
20
15
P
1dB
10
4V
3V
5
2V
0
0
10
20
30
I
DSQ
(mA)
40
50
60
15
P
1dB
10
4V
3V
2V
0
0
10
20
30
I
DSQ
(mA)
40
50
60
5
NF and Ga vs. Bias at 2GHz
1.65
1.5
1.35
1.2
1.05
NFmin(dB)
0.9
Ga
2
21.5
20
18.5
17
15.5
Ga(dB)
14
3V
12.5
2V
11
4V
9.5
8
6.5
5
NFmin(dB)
1.65
1.5
1.35
Ga
1.2
1.05
0.9
0.75
0.6
0.45
0.3
NF and Ga vs. Bias at 1GHz
2
23.5
22
20.5
19
17.5
3V
2V
4V
Ga(dB)
16
14.5
13
11.5
10
0.75
0.6
0.45
0.3
0.15
0
0
10
20
30
IDSQ(mA)
40
50
60
70
NFmin
0.15
0
0
10
20
30
IDSQ(mA)
40
50
60
70
8.5
7
NFmin
Notes:
1. P1dB and OIP3 measurements are performed with passive biasing. Idsq is set with zero RF drive applied. As P1dB is approached, the drain current may
increase or decrease depending on frequency and DC bias point. At lower values of Idsq the device is running in a Class AB mode and current tends to rise
as P1dB is approached. As an example, at a Vds = 3.0V and Idsq = 10 mA, Id increases to 30 mA as P1dB of 16.5 is approached. This rise in current is no
longer present as Idsq approaches 60 mA.
2. Measurements made on a fixed tuned test system set for optimum noise match. Circuit losses have been de-embedded for the actual measurements.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
500-6000 MHz
Dual, Ultra Low Noise, High IP3 Amplifier
May 2006 - Rev 24-May-06
CDQ0303-QS
Typical Performance
Nfmin vs. Frequency and Current, Vd=3V
1.65
1.5
1.35
1.2
1.05
NFmin (dB)
0.9
0.75
0.6
0.45
0.3
0.15
0
0
1
2
3
4
5
Frequency (GHz)
6
7
8
9
10
5
10mA
20
20mA
40mA
15
Ga (dB)
60mA
20mA
40mA
60mA
10mA
2
25
Associated Gain vs. Frequency and Current Vd=3V
2
10
0
0
1
2
3
4
5
Frequency (GHz)
6
7
8
9
10
24
22
20
18
16
Nfmin and Associated Gain vs. Frequency and Temperature @ Vd=3V,Id=20mA
1
1.65
1.5
1.35
OIP3 and P1dB vs. Frequency and Temperature, Vds=3V, Ids=20mA
30
1,2
25deg
-40deg
80deg
25
1.2
NFmin
OIP3
NFmin (dB)
Ga
Ga (dB)
14
12
10
8
6
4
2
0
2
4
6
Frequency (GHz)
8
10
12
0.9
0.75
0.6
0.45
0.3
0.15
0
OIP3, P1dB (dBm)
1.05
20
15
P
1dB
25deg
10
-40deg
85deg
5
1
2
3
4
5
6
Frequency (GHz)
Notes:
1. P1dB and OIP3 measurements are performed with passive biasing. Idsq is set with zero RF drive applied. As P1dB is approached, the drain current may
increase or decrease depending on frequency and DC bias point. At lower values of Idsq the device is running in a Class AB mode and current tends to rise
as P1dB is approached. As an example, at a Vds = 3.0V and Idsq = 10 mA, Id increases to 30 mA as P1dB of 16.5 is approached. This rise in current is no
longer present as Idsq approaches 60 mA.
2. Measurements made on a fixed tuned test system set for optimum noise match. Circuit losses have been de-embedded for the actual measurements.
