0.1-10.0 GHz Low Noise, Medium Power
pHEMT in a Surface Mount Plastic Package
May 2008 - Rev 12-May-08
CFS0103-SB
Features
AIGaAs/InGaAs/AIGaAs Pseudomorphic
High Electron Mobility Transistor (pHEMT)
High Dynamic Range
Low Current and Voltage
Bias Point 3V and 40 mA
0.4 dB Noise Figure at 2 GHz
16 dBm P1dB at 2 GHz
26 dBm OIP3 at 2 GHz
300 m Gate Width
Excellent Uniformity
Low-Cost, Surface-Mount Package (SOT-343)
RoHS Compliant Construction
Low Thermal Resistance: 170ºC/W
Applications
Low Noise Amplifiers and Oscillators Operating
over the RF and Microwave Frequency Ranges
Cellular/PCS/GSM/W-CDMA
Mobile Handsets, Base Station Receivers and
Tower-Mount Amplifiers
Wimax, WLAN, LEO, GEO, WLL/RLL, GPS and
MMDS Applications
General Purpose Discrete pHEMT for Other Ultra
Low-Noise and Medium Power Applications
Functional Diagram (SOT
-343)
Source
Gate
Drain
Source
Description
Mimix's pHEMT technology is tested and proven
in military, space and commercial applications. Mimix's
proven workhorse, the CF001-03, is now available in
packaged form as the CFS0103-SB.
The CFS0103-SB is a high dynamic range, low
noise, pHEMT packaged in a 4-lead SOT-343 surface mount
plastic package. It is intended for many applications operating
in the 0.1 GHz to 10 GHz frequency range.
Mimix's high performance packaged pHEMTs are
ideal for use in all applications where low noise figure, high
gain, medium power and good intercept is required. The
CFS0103-SB is the perfect solution for the first or second
stage of a base station LNA due to the excellent combination
of low noise figure and linearity. It is also well suited as a
medium power driver stage in pole-top amplifiers and other
transmit functions, particularly as the low thermal resistance
allows extended power dissipation when voltage and current
are adjusted for increased power and linearity.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 8
Characteristic Data and Specifications are subject to change without notice.
©2008
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
0.1-10.0 GHz Low Noise, Medium Power
pHEMT in a Surface Mount Plastic Package
May 2008 - Rev 12-May-08
CFS0103-SB
Electrical Characteristics
Parameters
Ta=25ºC, Typical device RF parameters measured in test system.
Test Conditions
Min
Typ
Max
Units
Saturated Drain Current1
Pinch-off Voltage 1
No RF, Quiescent Bias Current
Transconductance1
Gate to Drain Leakage Current
Gate Leakage Current
Noise Figure (optimized in a fixed
tuned system)
Associated Gain 2
Output Third Order Intercept Point
1 dB Gain Compression Point 2
Vds=3V, Vgs=0V
Vds=1.5V, Ids=10% of Idss
Vgs=0.35V, Vds=3V
Vds=2.5V. Gm=Idss/Vp
Vgd = 9
Vgd=Vgs= -4V
f=1000MHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
f=2GHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
f=1000MHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
f=2GHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
f=1000MHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
f=2GHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
f=1000MHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
f=2GHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
30
-0.8
75
70
-0.65
30
110
10
0.3
0.3
0.3
0.3
0.45
0.4
0.4
0.4
19.7
20.8
21.1
22.4
18
15.5
15.7
18
16
21
21.5
26.5
18
22
26
29
10
11.5
15.5
16
10
11.5
15.5
16
100
-0.5
150
150
0.9
15
mA
V
mA
mmho
µA
µA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Notes:
1. Guaranteed at wafer probe.
2. Measurements obtained at fixed tuned system.
Absolute Maximum Ratings
1
Parameter
Rating
Parameter
Rating
Parameter
Rating
Drain-Source Voltage 2
Gate-Source Voltage 2
Gate-Drain Voltage 2
+5.5 V
-5.0 V
-5.0 V
Drain Current 2
RF Input Power
Idss 3 A
17 dBm
Channel Temperature
Storage Temperature
Thermal Resistance
+175ºC
-65ºC to +160ºC
170ºC/W
Total Pwr Dissipation 560 mW
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage
2. Assumes DC quiescent conditions. RF OFF.
3. Vgs=0V
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 8
Characteristic Data and Specifications are subject to change without notice.
©2008
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
0.1-10.0 GHz Low Noise, Medium Power
pHEMT in a Surface Mount Plastic Package
May 2008 - Rev 12-May-08
CFS0103-SB
Typical Pulsed I-V Performance
CFS0103-SB
I-V Curves
90
80
70
0.0 V
-0.1 V
-0.2 V
-0.3 V
-0.4 V
-0.5 V
-0.6 V
-0.7 V
-0.8 V
-1.2 V
Ids (mA)
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Vds (Volts)
Block diagram of 2.0 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements.
Circuit Losses have been de-embedded from actual Measurements.
50 Ohm
Transmission Line
Including Gate Bias T
(0.5 dB Loss)
Input Matching Circuit
Tau-Mag = 0.54
T-Ang = 15º
(0.4 dB Loss)
50 Ohm
Transmission Line
Including Drain Bias T
(0.5 dB Loss)
Input
Output
DUT
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 8
Characteristic Data and Specifications are subject to change without notice.
©2008
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
0.1-10.0 GHz Low Noise, Medium Power
pHEMT in a Surface Mount Plastic Package
May 2008 - Rev 12-May-08
CFS0103-SB
Typical Performance
CFS0103-SB
NFmin Vs Frequency Vs Current
@
2V
2.00
1.80
1.60
1.40
2.00
1.80
1.60
1.40
CFS0103-SB
NFmin Vs Frequency Vs Current
@
3V
NF (dB)
1.20
1.00
0.80
0.60
0.40
0.20
0.00
0
1
2
3
4
5
6
7
8
9
10
NF (dB)
1.20
1.00
0.80
0.60
0.40
0.20
0.00
0
1
2
3
4
5
6
7
8
9
10
Frequency (GHz)
10mA
20mA
40mA
60mA
Frequency (GHz)
10mA
20mA
40mA
60mA
CFS0103-SB
NFmin Vs Frequency Vs Current
@
4V
2.00
1.80
1.60
1.40
2.00
1.80
1.60
1.40
CFS0103-SB
NFmin Vs Frequency Vs Voltage
@
10mA
NF (dB)
1.20
1.00
0.80
0.60
0.40
0.20
0.00
0
1
2
3
4
5
6
7
8
9
10
NF (dB)
1.20
1.00
0.80
0.60
0.40
0.20
0.00
0
1
2
3
4
5
6
7
8
9
10
Frequency (GHz)
10mA
20mA
40mA
60mA
Frequency (GHz)
2V
3V
4V
CFS0103-SB
NFmin Vs Frequency Vs Voltage
@
40mA
2.00
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
0
1
2
3
4
5
6
7
8
9
10
24.0
23.0
22.0
21.0
20.0
19.0
18.0
17.0
16.0
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
0
1
CFS0103-SB
Associated Gain Vs Frequency Vs Current
@
2V
Gain (dB)
NF (dB)
2
3
4
5
6
7
8
9
10
Frequency (GHz)
2V
3V
4V
10mA
Frequency (GHz)
20mA
40mA
60mA
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 8
Characteristic Data and Specifications are subject to change without notice.
©2008
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
0.1-10.0 GHz Low Noise, Medium Power
pHEMT in a Surface Mount Plastic Package
May 2008 - Rev 12-May-08
CFS0103-SB
Typical Performance (cont.)
CFS0103-SB
Associated Gain Vs Frequency Vs Current
@
3V
25.0
24.0
23.0
22.0
21.0
20.0
19.0
18.0
17.0
16.0
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
0
1
2
3
4
5
6
7
8
9
10
24.0
23.0
22.0
21.0
20.0
19.0
18.0
17.0
16.0
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
0
1
2
3
4
5
6
7
8
9
10
CFS0103-SB
Associated Gain Vs Frequency Vs Current
@
3V
Gain (dB)
Gain (dB)
Frequency (GHz)
10mA
20mA
40mA
60mA
10mA
Frequency (GHz)
20mA
40mA
60mA
CFS0103-SB
Associated Gain Vs Frequency Vs Voltage
@
10mA
21.0
20.0
19.0
18.0
17.0
16.0
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
0
1
2
3
4
5
6
7
8
9
10
24.0
23.0
22.0
21.0
20.0
19.0
18.0
17.0
16.0
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
0
1
CFS0103-SB
Associated Gain Vs Frequency Vs Voltage
@
40mA
Gain (dB)
Gain (dB)
2
3
4
5
6
7
8
9
10
Frequency (GHz)
2V
3V
4V
Frequency (GHz)
2V
3V
4V
CFS0103-SB
OIP3
&
P1dB Vs Current Vs Voltage
@
1GHz
35
30
25
20
15
10
5
0
0
10
20
30
40
50
60
70
35
30
25
20
15
10
5
0
35
30
CFS0103-SB
OIP3
&
P1dB Vs Current Vs Voltage
@
2GHz
35
30
25
20
15
10
5
0
0
10
20
30
40
50
60
70
Output Power (dBm)
OIP3 (dBm)
OIP3 (dBm)
25
20
15
10
5
0
Current (mA)
OIP3 4V
OIP3 3V
OIP3 2V
P1dB 2V
P1dB 4V
P1dB 3V
OIP3 4V
OIP3 3V
Current (mA)
OIP3 2V
P1dB 4V
P1dB 3V
P1dB 2V
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 8
Characteristic Data and Specifications are subject to change without notice.
©2008
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Output Power (dBm)
