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CGR-0218Z

PUSH-PULL 5MHz to 210MHz HIGH LINEARITY InGaP HBT AMPLIFIER

厂商名称：RF Micro Devices (Qorvo)

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CGR-0218Z
Push-Pull
5MHz to
210 MHz High
Linearity
InGaP HBT
Amplifier
CGR-0218Z
PUSH-PULL 5MHz to 210MHz HIGH
LINEARITY InGaP HBT AMPLIFIER
Package: SOIC-8
Product Description
RFMD’s CGR-0218Z is a high performance InGaP HBT MMIC Amplifier designed
with the InGaP process technology for excellent reliability. A Darlington configura-
tion is utilized for broadband performance. The heterojunction increases break-
down voltage and minimizes leakage current between junctions. The CGR-0218Z
contains two amplifiers for use in wideband push-pull CATV amplifiers requiring
excellent second order performance. The second and third order non-linearities are
greatly improved in the push-pull configuration.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Features
Amplifier Configuration
5V Single Supply
Excellent Linearity
Two Amplifiers in Each SOIC-8
Package Simplify Push-Pull
PC Board Layout
SOIC-8 Package
Available in Lead-Free, RoHS
Compliant Packaging
CATV Head Ends
CATV Line Drivers
DOCSIS Cable Modems
Applications
1
2
3
4
8
7
6
5
Parameter
Small Signal Gain
Gain Flatness
OIP
3
Min.
Specification
Typ.
17.3
±0.2
42
Max.
Unit
dB
dB
dBm
Condition
5MHz to 210MHz
5MHz to 210MHz
5MHz to 210MHz, Tone Spacing=1MHz, P
OUT
per
tone=+6dBm
5MHz to 210MHz
5MHz to 210MHz
5MHz to 210MHz
5MHz to 210MHz
7 Ch, Flat Tilt, +50dBmV
7 Ch, Flat Tilt, +50dBmV
7 Ch, Flat Tilt, +50dBmV
5V V
CC
Junction to case slug
P1dB
23
dBm
Input Return Loss
22
dB
Output Return Loss
22
dB
Noise Figure, Balun Insertion Loss
4.0
dB
Included
CSO
80
dBc
CTB
67
dBc
XMOD
66
dBc
Device Operating Voltage
5.0
V
Device Operating Current
217
mA
Thermal Resistance (Junction to
30
°C/W
Lead)
Test Conditions: V
CC
=5V, I
D
=217mA Typ., T
L
=25°C, Z
S
=Z
L
=75, Push Pull Application Circuit
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS091015
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 8
CGR-0218Z
Absolute Maximum Ratings
Parameter
Max Device Current (I
D
)
Max Device Voltage (V
D
)
Max RF Input Power
Max Junction Temp (T
J
)
Operating Temp Range (T
L
)
Max Storage Temp
Min Storage Temp
Rating
300
6.0
18
150
-40 to +85
150
-40
Unit
mA
V
dBm
°C
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l and T
L
=T
LEAD
Input Return Loss
30
35
30
25
20
15
Output Return Loss
25
20
dB
dB
15
10
10
5
5
0
0
50
100
150
200
250
0
50
100
150
200
250
0
Frequency
Frequency
Gain
20
25
Reverse Isolation
16
20
12
15
dB
8
dB
10
4
5
0
0
50
100
150
200
250
0
0
50
100
150
200
250
Frequency
Frequency
2 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS091015
CGR-0218Z
Noise Figure
5
25
Output P1dB
4
20
3
15
dB
2
dBm
10
1
5
0
0
50
100
150
200
250
0
0
50
100
150
200
250
Frequency
Frequency
Output IP3
50
80
70
40
60
30
50
XMOD
dBm
20
dBc
40
30
20
10
10
0
0
50
100
150
200
250
0
0
5
10
15
20
25
30
35
40
45
50
Frequency
Frequency
CSO
100
90
80
70
60
CTB
80
70
60
50
dBc
50
40
30
20
10
0
0
5
10
15
20
25
30
35
40
45
50
dBc
40
30
20
10
0
0
5
10
15
20
25
30
35
40
45
50
Frequency
Frequency
DS091015
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 8
CGR-0218Z
Evaluation Board Schematic
JP 2
VDD
C16
10 uF
C15
0 .1 u F
C14
1 .0 u F
C13
68 pF
JP 1
GND
C2
0 .1 u F
1
C4
0 .1 u F
R2
470 ohm
L3
10 uH
8
J1
IN
R3
0 ohm
C6
0 .1 u F
T1
X F M -0 2 0 1 -1 W H
2
U1
CGR0218Z
7
T2
X F M -0 2 0 1 -1 W H
J2
OUT
3
6
C1
0 .1 u F
4
5
C5
0 .1 u F
JP 4
GND
C3
0 .1 u F
R1
470 ohm
L2
10 uH
JP 3
VDD
C7
10 uF
C8
0 .1 u F
C9
1 .0 u F
C10
68 pF
Evaluation Board Layout
U1
Value
68pF
0.1uF
1.0uF
10uF
0
470
10uH
RFMD™ XFM-0201-1WH
QTY
2
8
2
2
1
2
2
2
Location
C10, C13
C1, C2, C3, C4, C5, C6, C8, C15
C9, C14
C7, C10
R3
R1, R2
L2, L3
T1, T2
4 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS091015
CGR-0218Z
Pin
1
2, 3,
6, 7
4
5
8
EPAD
Function
RF IN
GND
RF IN
RF OUT/VCC
RF OUT/VCC
GND
Description
RF input pin. External DC blocking capacitor is required.
Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as
possible.
Same as pin 1.
RF output and bias pin (open collector).
Same as pin 5.
Exposed area on the bottom side of the package must be soldered to the ground plane of the board for optimum
thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended
land pattern.
Pin Out
Amplifier Configuration
1
2
3
4
8
7
6
5
DS091015
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 8
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参数对比
与CGR-0218Z相近的元器件有：CGR0218ZTR13、CGR0218ZSR。描述及对比如下：
型号 CGR-0218Z CGR0218ZTR13 CGR0218ZSR
描述 PUSH-PULL 5MHz to 210MHz HIGH LINEARITY InGaP HBT AMPLIFIER PUSH-PULL 5MHz to 210MHz HIGH LINEARITY InGaP HBT AMPLIFIER PUSH-PULL 5MHz to 210MHz HIGH LINEARITY InGaP HBT AMPLIFIER
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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