CHA2080-98F
71-86GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2080-98F is a Low Noise Amplifier
with variable gain. This circuit integrates four
stages and provides 3.5dB Noise Figure
associated to 22dB Gain and +10dBm
Output Power at 1dB compression.
This
amplifier
is
dedicated
to
telecommunication, particularly well suited for
the two main E-Bands used in new
generation of High Capacity Backhaul.
It is manufactured with a pHEMT process,
0.1µm gate length, via holes through the
substrate, air bridges, electron beam gate
lithography and is available in chip form with
BCB Layer protection.
Functional diagram
Main Features
■ Broadband performances: 71-86GHz
■ Very low Noise Figure: 3.5dB
■ High Gain: 22dB
■ Dynamic Gain control: 12dB
■ 10dBm Pout@1dB compression
■ BCB Layer protection
■ DC bias: Vd=3.5Volt@Id=75mA
■ Chip size 3.35x1.12x0.07mm
Associated Gain & NF (dB)
28
24
20
16
12
8
4
0
65
70
75
Frequency (GHz)
80
85
90
Typical Linear gain and Noise Figure
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq
Frequency range
Gain
Linear Gain
NF
Noise Figure
Pout
Output Power @1dB compression
Ref. : DSCHA20802355 - 20 Dec 12
1/12
Min
71
Typ
22
3.5
10
Max
86
Unit
GHz
dB
dB
dBm
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA2080-98F
Electrical Characteristics
71-86GHz Low Noise Amplifier
Tamb.=+25°C, Vd=+3.5V, Id=75mA
Symbol
Parameter
Fop
Frequency range
Gain*
Linear Gain
∆Gain(Fop)
Gain variation:
Low Band [71-76 GHz]
High Band [81-86 GHz]
Dyn_Gain
Gain Dynamic with VGx [-3; -2V]
NF*
Noise Figure@ nominal gain
Low Band [71-76 GHz]
High Band [81-86 GHz]
Pout@1dB
Output power at 1 dB compression
comp.*
Low Band [71-76 GHz]
High Band [81-86 GHz]
VSWR_in*
VSWR at input port
VSWR_out*
VSWR at output port
VG12 & VG34 Negative supply voltage
Ig
Negative supply current
Id
Positive supply current
Min
71
Typ
22
±0.2
±0.8
12
4
3.5
12
10
2:1
2:1
-2
0.6
75
Max
86
Unit
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
V
mA
mA
*Nominal conditions: VG12=VG34 are tuned to obtain Id=75mA (#-2V)
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
A ribbon (75 µm wide) connection at the input and the output of the MMIC amplifier (see
chapter recommended chip assembly) could improve the results.
Absolute Maximum Ratings
(1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4
V
Id
Drain bias current
95
mA
Vg
Gate bias voltage
-3 to +0.4
V
Pin
Maximum peak input power overdrive
(2)
+0
dBm
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1)
Operation of this device above anyone of these parameters may cause permanent damage.
(2)
Duration < 1s.
Ref. : DSCHA20802355 - 20 Dec 12
2/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
71-86GHz Low Noise Amplifier
Typical on-wafer Sij parameters
Tamb.=+25°C, Vd=+3.5V, Id=75mA
Freq
S11
PhS11
S12
(GHz)
(dB)
(°)
(dB)
68
-3.3
9
-39.7
68.5
-4.3
-5
-45.9
69
-5.4
-21
-45
69.5
-6.8
-36
-47.7
70
-8.1
-51
-42.8
70.5
-9.3
-66
-42.3
71
-10.4
-82
-44.5
71.5
-11.6
-98
-43.8
72
-12.7
-115
-44.5
72.5
-14.5
-135
-44.7
73
-14.9
-151
-46.4
73.5
-15.7
-158
-48.5
74
-16.5
-164
-47.7
74.5
-17.3
-175
-50.5
75
-16.5
172
-53.6
75.5
-17
160
-52.2
76
-17
151
-54.4
76.5
-17.2
139
-56.9
77
-17.6
123
-53.5
77.5
-19.4
107
-51.8
78
-20.6
87
-50.1
78.5
-24.8
55
-48.8
79
-30.8
16
-49.4
79.5
-29.3
-56
-50.1
80
-28.6
-109
-50.8
80.5
-24.2
-130
-49.7
81
-21.4
-154
-50.2
81.5
-19.6
-172
-53.8
82
-18.1
173
-53.2
82.5
-17
156
-64.1
83
-15.7
139
-59.5
83.5
-14.3
122
-61.6
84
-12.8
101
-59.4
84.5
-11.3
82
-60.9
85
-10
60
-53.3
85.5
-8.8
42
-51.4
86
-7.7
24
-51
86.5
-6.6
7
-51.5
87
-5.7
-9
-50.9
87.5
-4.9
-24
-50.8
88
-4.3
-40
-50
88.5
-4
-54
-51.2
89
-3.9
-67
-51.7
PhS12
(°)
152
160
159
166
160
144
132
119
123
111
98
95
66
53
2
1
-34
-65
-86
-101
-131
-158
-174
165
145
143
113
88
70
43
88
85
29
15
-39
-73
-108
-130
-148
-165
171
137
110
S21
(dB)
19.5
19.9
20.8
21.2
21.5
21.7
21.8
21.7
21.6
21.6
21.5
21.3
21.3
21.5
21.4
21.5
21.5
21.6
21.7
21.7
21.9
22.1
22.1
22.1
22
21.8
21.5
21.3
21.2
21
20.9
20.9
20.8
20.5
20.5
20.4
19.9
19.9
19.6
18.6
17
14.2
10.8
CHA2080-98F
PhS21
(°)
106
86
63
42
21
0
-19
-39
-58
-77
-97
-115
-131
-146
-164
180
163
146
128
110
91
74
55
34
15
-3
-22
-40
-58
-78
-96
-115
-136
-157
-180
159
136
109
84
51
18
-12
-41
S22
(dB)
-10.3
-9.6
-8.7
-9.8
-11.6
-12.8
-12.8
-11.3
-10.4
-11
-12.4
-13
-13.3
-12.8
-12.9
-14.5
-14.9
-15.3
-15.3
-15.5
-15.7
-15.7
-15
-15.2
-16
-15.8
-15.4
-15.1
-15
-15.4
-15.4
-15.2
-14.5
-13.7
-14.6
-15
-15.6
-16.8
-17
-16.7
-15.2
-13.9
-12.7
PhS22
(°)
73
58
59
63
62
57
52
47
45
44
33
20
10
4
-4
-13
-32
-48
-57
-71
-94
-117
-139
-160
-177
164
146
131
118
102
86
72
60
41
30
18
0
-8
-1
1
2
-7
-18
Ref. : DSCHA20802355 - 20 Dec 12
3/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA2080-98F
Typical on wafer Measurements
Tamb.=+25°C, Vd =+3.5V, Id=75mA
71-86GHz Low Noise Amplifier
Linear Gain & return losses versus frequency
30
25
20
Gain & Return Losses (dB)
15
10
S11
S21
S22
5
0
-5
-10
-15
-20
-25
-30
65
70
75
Frequency (GHz)
80
85
90
Linear Gain versus Vg voltage
30
25
20
Gain (dB)
15
10
5
-2V
0
-2.4V
-2.6V
-2.8V
-3V
-5
65
70
75
80
85
90
Frequency (GHz)
Ref. : DSCHA20802355 - 20 Dec 12
4/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
71-86GHz Low Noise Amplifier
Typical on wafer Measurements
Tamb.=+25°C, Vd=+3.5V, Id=75mA
CHA2080-98F
Input Return loss versus vg voltage
0
-2V
-5
-10
S11 (dB)
Output Return loss versus vg Voltage
0
-5
-10
S22 (dB)
-2.4V
-2.6V
-2.8V
-3V
-2V
-2.4V
-2.6V
-2.8V
-3V
-15
-20
-25
-15
-20
-25
-30
65
70
75
80
Frequency (GHz)
85
90
-30
65
70
75
80
Frequency (GHz)
85
90
Noise Figure versus Vg voltage
10
-2V
9
8
-2.4V
-2.6V
-2.8V
-3V
Noise Figure (dB)
7
6
5
4
3
2
1
0
65
70
75
Frequency (GHz)
80
85
90
Ref. : DSCHA20802355 - 20 Dec 12
5/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
模拟与混合信号
