CHA7215
RoHS COMPLIANT
X-band High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA7215 is a monolithic three-stage
GaAs high power amplifier designed for X
band applications.
The HPA provides typically 9W output power
associated to 35% power added efficiency at
4dBc and a high robustness on mismatch
load.
This device is manufactured using 0.25 µm
Power pHEMT process, including, via holes
through the substrate and air bridges.
●
IN
VG1R
VD1
VG2R
VD2
VG3R
VD3
● ●
● ●
● ●
●
OUT
●
VD1
●
VD2
VG3R
● ●
VD3
Output Power versus Frequency @Pin=19dBm
41
40,5
40
O u tp u t P o w e r (d B m )
Main Features
0.25 µm Power pHEMT Technology
Frequency band: 8.5 – 11.5GHz
Output power: 39.5dBm at saturation
High linear gain: 28dB
Power added efficiency: 34% @4dBc
Quiescent bias point: Vd=8V, Id=2.3A
Chip size
:
5 x 3.31 x 0.07mm
39,5
39
38,5
38
37,5
37
36,5
36
35,5
35
8
8,5
9
9,5
10
10,5
11
11,5
12
Temp=-40°C
Temp=+20°C
Temp=+80°C
Frequency (GHz)
Main Characteristics
Vd=8V, Id (Quiescent) = 2.3A, Drain Pulse width = 25µs, Duty cycle = 10%
Symbol
Top
Parameter
Operating temperature range
Operating frequency range
Power added efficiency @4dBc @ 20°
C
Saturated output power @ 20°
C
Small signal gain @ 20°
C
Min
-40
8.5
Typ
Max
+80
11.5
Unit
°
C
GHz
%
dBm
Fop
PAE_4dBc
Psat
G
34
39.5
25
28
31
dB
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHA72159287 - 14 Oct 09
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA7215
X-band High Power Amplifier
Electrical Characteristics on test fixture
Tamb = 20° Vd=8V, Id (Quiescent) = 2.3A, Drain Pu lse width = 25µs, Duty cycle = 10%
C,
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency
8.5
11.5
GHz
G
Small signal gain
25
28
31
dB
Small signal gain variation versus
-0.05
dB/°
C
G_T
temperature
RLin
Input Return Loss
10
dB
RLout
Output Return Loss
12
dB
Psat
Saturated output power
39.5
dBm
Saturated output power variation versus
-0.01
dB/°
C
Psat_T
temperature
PAE_4dBc
Power added efficiency @4dBc
34
%
Id_4dBc
Supply drain current @ 4dBc
3.3
4.4
A
Vd1, Vd2, Vd3
Drain supply voltage (2)
8
V
Id
Supply quiescent current (1)
2.3
A
Vg1, Vg2, Vg3
Gate supply voltage
-2.2
V
(1) Parameter can be adjusted by tuning of Vg.
(2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings)
Absolute Maximum Ratings (1)
Tamb = 20°
C
Symbol
Parameter
Values
Unit
Cmp
Compression level (2)
6
dBc
Vd
Supply voltage with RF input power
9
V
Vd
Supply voltage without RF input power
10
V
Id
Supply quiescent current
3
A
Id_sat
Supply current in saturation
4.8
A
Vg
Supply voltage
-1.1
V
Tj
Maximum junction temperature
175
°
C
Tstg
Storage temperature range
-55 to +125
°
C
Top
Operating temperature range
-40 to +80
°
C
(1)
Operation of this device above anyone of these parameters may cause
permanent damage.
(2)
For higher compression the level limit can be increased by decreasing the voltage
Vd using the rate 0.5 V / dBc
Ref : DSCHA72159287 - 14 Oct 09
2/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
Typical measured characteristics
Measurements on Jig:
CHA7215
Vd=8V, Id (Quiescent) = 2.3A, Drain Pulse width = 25µs, Duty cycle = 10%
38
36
34
Temp=-40°
C
Temp=+20°
C
Temp=+80°
C
Linear Gain (dB)
32
30
28
26
24
22
20
18
8
8,5
9
9,5
10
10,5
11
11,5
12
Frequency (GHz)
Linear gain versus frequency and temperature
42
Linear Gain (dB) & Output Power (dBm) @10GHz
40
38
36
34
32
30
28
26
24
22
20
18
16
0
Temp=-40°
C
Temp=-40°
C
Temp=+20°C
Temp=+20°C
Temp=+80°C
Temp=+80°C
Pout
Gain
2
4
6
8
10
12
14
16
18
20
Input Power (dBm)
Linear Gain and Output Power @Freq=10GHz
versus input power and temperature
Ref : DSCHA72159287 - 14 Oct 09
3/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA7215
X-band High Power Amplifier
41
40,5
Output Power @ Pin=17dBm (dBm)
40
39,5
39
38,5
38
37,5
37
36,5
36
35,5
35
34,5
34
8
8,5
9
9,5
10
10,5
11
11,5
12
Temp=-40°
C
Temp=+20°
C
Temp=+80°
C
Frequency (GHz)
Output Power @Pin=17dBm versus frequency and temperature
5
4,5
4
ID @Pin=17dBm (A)
3,5
3
2,5
2
1,5
1
0,5
0
8
8,5
9
9,5
10
10,5
11
11,5
12
Temp=-40°
C
Temp=+20°
C
Temp=+80°
C
Frequency (GHz)
Id @Pin=17dBm versus frequency and temperature
Ref : DSCHA72159287 - 14 Oct 09
4/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
CHA7215
50
45
40
PAE @Pin=17dBm (%)
35
30
25
20
15
10
5
0
8
8,5
9
9,5
10
10,5
11
11,5
12
Temp=-40°
C
Temp=+20°
C
Temp=+80°
C
Frequency (GHz)
PAE @Pin=17dBm versus frequency and temperature
Ref : DSCHA72159287 - 14 Oct 09
5/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
