CHR2299-99F
RoHS COMPLIANT
40-44GHz Down converter
GaAs Monolithic Microwave IC
LO_IN
X4
Description
The CHR2299-99F is a down converter
multifunction chip, which integrates LO X4
multiplier, a balanced cold FET mixer and a
RF LNA.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a power
pHEMT process, 0.15µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
IF_I
IF_Q
4LO_OUT
RF_IN
DX
■ 40-44GHz RF bandwidth
■ 21dB conversion gain
■ x4 LO frequency multiplier
■ x4 LO output port
■ > 12dB image rejection
■ DC bias: Vd = 4V @ Id = 240mA
■ Chip size 3.97x2.25x0.1mm
Conversion Gain (dB)
Main Features
30
28
26
24
22
20
18
16
14
12
10
39
40
supradyne
41
42
GM
GX
DA
G3
infradyne
43
44
45
RF_frequency (GHz)
Main Characteristics
Tamb.= +25°C
Symbol
F_RF
F_LO
F_IF
Gc
Parameter
Min
40
9.5
DC
21
Typ
Max
44
11.5
2.0
Unit
GHz
GHz
GHz
dB
RF frequency range
LO frequency range
IF frequency range
Conversion gain
Ref. : DSCHR22992012 - 19 Jan 12
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR2299-99F
Electrical Characteristics
Tamb. = +25°C
Symbol
F_RF
F_LO
F_IF
Gc
Im rej
P_LO
NF
IMD3
RL_RF
RL_LO
P_4FLO
4xFLO_Lk
DX, DA
GM
G3
GX
IdT
Parameter
40-44GHz Down converter
Min
40
9.5
DC
Typ
Max
44
11.5
2.0
Unit
GHz
GHz
GHz
dB
dB
dBm
dB
dBc
dB
dB
dBm
dBm
V
V
V
V
mA
RF frequency range
LO frequency range
IF frequency range
Conversion gain
Image rejection
LO Input power
Noise figure for IF>0.1GHz
Intermodulation level at Pin
2tones
= -30dBm
RF Return Loss
LO Return Loss
Output power at 4LO_OUT port
4xFLO leakage on RF port
LO multiplier, buffer and LNA biasing
Mixer gate biasing
LO buffer gate biasing
Multiplier gate biasing
Total biasing current
21
12
0
4.5
45
6
12
-1
-38
4
-0.6
-0.3
-1.2
240
Electrostatic discharge sensitive device observe handling precautions!
These values are representative of chip on board measurements with a 90° hybrid coupler.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
DX, DA
LO multiplier, buffer and LNA biasing
4.5
IdT
Total biasing current
300
GM, G3, GX Gate bias voltage
-2; +0.6
P_LO
Maximum peak input LO power overdrive
(2)
10
(2)
Pin_RF
Maximum peak input RF power overdrive
-5
Tj
Junction temperature
175
Ta
Operating temperature range
-40 to +85
Tstg
Storage temperature range
-55 to +155
RTh
Thermal resistance, Tback side = +85 °C, Ptotal = 0.96 W
80
(1)
(2)
Unit
V
mA
V
dBm
dBm
°C
°C
°C
°C/W
Operation of this device above anyone of these parameters may cause permanent damage
Duration < 1s
2/12
Specifications subject to change without notice
Ref. : DSCHR22992012 - 19 Jan 12
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
40-44GHz Down converter
CHR2299-99F
Typical chip on board Measurements in Temperature
DX= DA = 4V, GM = -0.6V, G3 = -0.3V, GX = -1.2V, P_LO = 0dBm
These values are representative of onboard measurements as defined on the section
”Evaluation mother board”. The losses are de-embedded.
Conversion Gain versus RF frequency & temperature
RF = 4LO-IF; IF = 1GHz
30
28
Conversion Gain (dB)
26
24
22
20
18
16
14
12
10
39
40
41
42
RF_frequency (GHz)
-40 °C
+25 °C
+85 °C
43
44
45
Conversion Gain versus RF frequency & temperature
RF = 4LO+IF; IF = 1GHz
30
28
Conversion Gain (dB)
26
24
22
20
18
16
14
12
10
39
40
41
42
RF_frequency (GHz)
-40 °C
+25 °C
+85 °C
43
44
45
Ref. : DSCHR22992012 - 19 Jan 12
3/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR2299-99F
40-44GHz Down converter
Typical chip on board Measurements in Temperature
Conversion Gain versus RF frequency & temperature
RF = 4LO+/-IF; IF = 3.5GHz
Conversion Gain versus RF frequency & temperature
RF = 4LO+IF; IF = 6GHz
30
28
26
Conversion Gain (dB)
24
22
20
18
16
14
12
10
39
40
41
42
RF_frequency (GHz)
-40 °C
+25 °C
+85 °C
43
44
45
Ref. : DSCHR22992012 - 19 Jan 12
4/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
40-44GHz Down converter
CHR2299-99F
Typical chip on board Measurements in Temperature
Image rejection versus RF frequency & temperature
RF = 4LO+/-IF; IF = 2GHz
30
-40 °C; sup
inf
+25 °C; sup
inf
+85 °C; sup
inf
25
Image Rejection (dB)
20
15
10
5
39
40
41
42
RF_frequency (GHz)
43
44
45
Image rejection versus RF frequency & temperature
RF = 4LO+IF; IF = 6GHz
50
Image Rejection (dB)
45
40
35
-40 °C
+25 °C
+85 °C
30
39
40
41
42
RF_frequency (GHz)
43
44
45
Ref. : DSCHR22992012 - 19 Jan 12
5/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
