CLA30E1200PC
High Efficiency Thyristor
V
RRM
I
TAV
V
T
=
=
=
1200 V
30 A
1.27 V
Single Thyristor
Part number
CLA30E1200PC
Backside: anode
4/2
3
1
Features / Advantages:
●
Thyristor for line frequency
●
Planar passivated chip
●
Long-term stability
Applications:
●
Line rectifying 50/60 Hz
●
Softstart AC motor control
●
DC Motor control
●
Power converter
●
AC power control
●
Lighting and temperature control
Package:
TO-263 (D2Pak)
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827e
© 2015 IXYS all rights reserved
CLA30E1200PC
Thyristor
Symbol
V
RSM/DSM
V
RRM/DRM
I
R/D
V
T
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
T
VJ
= 150 °C
min.
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
Ratings
typ.
max. Unit
1300
V
1200
10
2
1.30
1.59
1.27
1.65
30
47
0.86
13.2
0.25
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
T
C
= 150 °C
13
10
5
0.5
T
VJ
= 150 °C; f = 50 Hz
repetitive, I
T
=
t
P
= 200 µs; di
G
/dt = 0.3 A/µs;
I
G
=
0.3 A; V =
⅔
V
DRM
non-repet., I
T
=
V =
⅔
V
DRM
R
GK
=
∞; method 1 (linear voltage rise)
V
D
= 6 V
V
D
= 6 V
V
D
=
⅔
V
DRM
t
p
=
I
G
=
10 µs
0.3 A; di
G
/dt =
0.3 A/µs
T
VJ
= 25 °C
T
VJ
= 25 °C
0.3 A/µs
150
µs
20 V/µs t
p
= 200 µs
60
2
mA
µs
90 A
30 A
250
300
325
255
275
450
440
325
315
V
µA
mA
V
V
V
V
A
A
V
mΩ
K/W
W
A
A
A
A
A²s
A²s
A²s
A²s
pF
W
W
W
V
R/D
= 1200 V
V
R/D
= 1200 V
I
T
=
I
T
=
I
T
=
I
T
=
30 A
60 A
30 A
60 A
I
TAV
I
T(RMS)
V
T0
r
T
R
thJC
R
thCH
P
tot
I
TSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 115 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.5 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
C
J
P
GM
P
GAV
(di/dt)
cr
junction capacitance
max. gate power dissipation
V
R
= 400 V f = 1 MHz
t
P
= 30 µs
t
P
= 300 µs
average gate power dissipation
critical rate of rise of current
150 A/µs
500 A/µs
500 V/µs
1.3
1.6
30
50
0.2
1
90
V
V
mA
mA
V
mA
mA
(dv/dt)
cr
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
critical rate of rise of voltage
T
VJ
= 150°C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 150°C
T
VJ
= 25 °C
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
V
D
= 6 V R
GK
=
∞
V
D
= ½ V
DRM
I
G
=
0.3 A; di
G
/dt =
turn-off time
V
R
= 100 V; I
T
= 30 A; V =
⅔
V
DRM
T
VJ
=125 °C
di/dt = 10 A/µs dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827e
© 2015 IXYS all rights reserved
CLA30E1200PC
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
F
C
mounting force with clip
TO-263 (D2Pak)
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
35
150
125
150
Unit
A
°C
°C
°C
g
N
2
20
60
Product Marking
Part description
C
L
A
30
E
1200
PC
=
=
=
=
=
=
=
Thyristor (SCR)
High Efficiency Thyristor
(up to 1200V)
Current Rating [A]
Single Thyristor
Reverse Voltage [V]
TO-263AB (D2Pak) (2)
Part No.
Logo
Assembly Line
Date Code
Assembly Code
XXXXXXXXX
IXYS
Zyyww
000000
Ordering
Standard
Ordering Number
CLA30E1200PC
Marking on Product
CLA30E1200PC
Delivery Mode
Tape & Reel
Quantity
800
Code No.
508235
Similar Part
CLA30E1200PB
CLA30E1200HB
CS22-12io1M
CS22-08io1M
CMA30E1600PN
CMA30E1600PB
CMA30E1600PZ
Package
TO-220AB (3)
TO-247AD (3)
TO-220ABFP (3)
TO-220ABFP (3)
TO-220ABFP (3)
TO-220AB (3)
TO-263AB (D2Pak) (2HV)
Voltage class
1200
1200
1200
800
1600
1600
1600
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Thyristor
* on die level
T
VJ
= 150 °C
V
0 max
R
0 max
0.86
10
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827e
© 2015 IXYS all rights reserved
CLA30E1200PC
Outlines TO-263 (D2Pak)
Dim.
W
A
c2
Supplier
Option
E
D
A1
H
4
1 2 3
c
2x e
10.92
(0.430)
3x b2
mm (Inches)
2x b
E1
A
A1
A2
b
b2
c
c2
D
D1
D2
E
E1
e
e1
H
L
L1
W
9.02
(0.355)
Millimeter
min
max
4.06
4.83
typ. 0.10
2.41
0.51
0.99
1.14
1.40
0.40
0.74
1.14
1.40
8.38
9.40
8.00
8.89
2.5
9.65
10.41
6.22
8.50
2,54 BSC
4.28
14.61 15.88
1.78
2.79
1.02
1.68
typ.
0.040
0.02
Inches
min
max
0.160 0.190
typ. 0.004
0.095
0.020 0.039
0.045 0.055
0.016 0.029
0.045 0.055
0.330 0.370
0.315 0.350
0.098
0.380 0.410
0.245 0.335
0,100 BSC
0.169
0.575 0.625
0.070 0.110
0.040 0.066
typ.
0.002
0.0008
L1
L2
L
D1
All dimensions conform with
and/or within JEDEC standard.
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
3.05
(0.120)
Recommended min. foot print
4/2
3
1
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827e
© 2015 IXYS all rights reserved
CLA30E1200PC
Thyristor
60
50
40
280
50 Hz, 80% V
RRM
1000
V
R
= 0 V
240
T
VJ
= 45°C
I
T
30
I
TSM
200
[A]
160
20
10
T
VJ
= 25°C
0
0,5
1,0
1,5
2,0
80
0,001
0,01
T
VJ
= 150°C
125°C
120
It
[A
2
s]
100
2
T
VJ
= 45°C
T
VJ
= 125°C
[A]
T
VJ
= 125°C
0,1
1
1
2
3
4 5 6 7 8 910
V
T
[V]
Fig. 1 Forward characteristics
t [s]
Fig. 2 Surge overload current
I
TSM
: crest value, t: duration
10
2
C
40
t [ms]
Fig. 3 I
2
t versus time (1-10 s)
4
I
GD
: T
VJ
= 125°C
B
I
GT
: T
VJ
= -40°C
3
B
B
I
GT
: T
VJ
= 25°C
I
GT
: T
VJ
= 0°C
10
1
T
VJ
= 125°C
30
V
G
2
t
gd
[µs]
10
0
lim.
typ.
I
T(AV)M
20
[V]
1
A
0
0
[A]
10
dc =
1
0.5
0.4
0.33
0.17
0.08
I
GD
: T
VJ
= 25°C
25
50
75
10
-1
10
-2
10
-1
10
0
10
1
0
0
40
80
120
160
I
G
[mA]
Fig. 4 Gate voltage & gate current
Triggering: A = no; B = possible; C = safe
I
G
[A]
Fig. 5 Gate controlled delay time t
gd
T
case
[°C]
Fig. 6 Max. forward current at
case temperature
60
50
40
dc =
1
0.5
0.4
0.33
0.17
0.08
R
thHA
0.6
0.8
1.0
2.0
4.0
8.0
0,6
0,5
0,4
P
(AV)
30
Z
thJC
0,3
[W]
20
10
0
0
10
20
30
40 0
50
100
150
[K/W]
0,2
0,1
0,0
1
10
i R
thi
(K/W)
1
0.08
2
0.06
3
0.2
4
0.05
5
0.11
100
1000
t
i
(s)
0.01
0.001
0.02
0.2
0.11
10000
I
T(AV)
[A]
T
amb
[°C]
t [ms]
Fig. 7 Transient thermal impedance junction to case
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827e
© 2015 IXYS all rights reserved
