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CLC114MDC

IC BUFFER AMPLIFIER, UUC11, DIE, Buffer Amplifier

器件类别:模拟混合信号IC    放大器电路   

厂商名称:National Semiconductor(TI )

厂商官网:http://www.ti.com

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器件参数
参数名称
属性值
零件包装代码
WAFER
包装说明
DIE
针数
11
Reach Compliance Code
unknown
ECCN代码
EAR99
放大器类型
BUFFER
最大平均偏置电流 (IIB)
5 µA
标称带宽 (3dB)
200 MHz
JESD-30 代码
R-XUUC-N11
负供电电压上限
-7 V
标称负供电电压 (Vsup)
-5 V
功能数量
1
端子数量
11
最小输出电流
0.02 A
封装主体材料
UNSPECIFIED
封装代码
DIE
封装形状
RECTANGULAR
封装形式
UNCASED CHIP
认证状态
Not Qualified
标称压摆率
450 V/us
供电电压上限
7 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
端子形式
NO LEAD
端子位置
UPPER
Base Number Matches
1
文档预览
CLC114
Quad, Low-Power Video Buffer
June 1999
N
CLC114
Quad, Low-Power Video Buffer
General Description
Features
s
s
s
s
s
s
Closed-loop, quad buffer
200MHz small-signal bandwidth
450V/µs slew rate
Low power, 30mW per channel (±5V sup.)
62dB channel isolation (10MHz)
Specified for crosspoint switch loads
Video crosspoint switch driver
Video distribution buffers
Video switching buffers
Video signaling multiplexing
Instrumentation amps
Active filters
Applications
s
s
s
s
s
s
Constructed using an advancd, complementary bipolar process and
National’s proven high-speed architectures, the CLC114 is available
in several versions to meet a variety of requirements.
CLC114AJP
CLC114AJE
CLC114ALC
CLC114AMC
CLC114A8B
-40°C
-40°C
-40°C
-55°C
to
to
to
to
+85°C
+85°C
+85°C
+125°C
14-pin plastic DIP
14-pin plastic SOIC
dice
dice qualified to Method 5008,
MIL-STD-883, Level B
14-pin CERDIP,
MIL-STD-883, Level B
-55°C to +125°C
DESC SMD number: 5962-92339
Typical Application
Pinout
© 1999 National Semiconductor Corporation
Printed in the U.S.A.
http://www.national.com
CLC114 Electrical Characteristics
(V
cc
= +5V, R
L
= 100Ω unless specified)
Performance Driving a Crosspoint Swtich
Min/max ratings are based on product
characterization and simulation. Individual
parameters are tested as noted. Outgoing
quality levels are determined from tested
parameters.
Absolute Maximum Ratings
Miscellaneous Ratings
Package Thermal Resistance
Package
Plastic (AJP)
Surface Mount (AJE)
CERDIP
θ
JC
65
°
C/W
55
°
C/W
35
°
C/W
θ
JA
115
°
C/W
125
°
C/W
90
°
C/W
Reliability Information
Transistor Count
http://www.national.com
64
2
CLC114 Typical Performance Characteristics
3
http://www.national.com
http://www.national.com
4
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5
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参数对比
与CLC114MDC相近的元器件有:5962-9233901M2A、5962-9233901MCA、CLC114AJ-MLS、CLC114AJE-TR13。描述及对比如下:
型号 CLC114MDC 5962-9233901M2A 5962-9233901MCA CLC114AJ-MLS CLC114AJE-TR13
描述 IC BUFFER AMPLIFIER, UUC11, DIE, Buffer Amplifier IC QUAD BUFFER AMPLIFIER, CQCC20, LCC-20, Buffer Amplifier IC QUAD BUFFER AMPLIFIER, CDIP14, CERDIP-14, Buffer Amplifier IC QUAD BUFFER AMPLIFIER, CDIP14, CERDIP-14, Buffer Amplifier IC QUAD BUFFER AMPLIFIER, PDSO14, PLASTIC, SOIC-14, Buffer Amplifier
零件包装代码 WAFER QFN DIP DIP SOIC
包装说明 DIE QCCN, LCC20,.35SQ DIP, DIP14,.3 CERDIP-14 SOP, SOP14,.25
针数 11 20 14 14 14
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
放大器类型 BUFFER BUFFER BUFFER BUFFER BUFFER
最大平均偏置电流 (IIB) 5 µA 5 µA 5 µA 10 µA 5 µA
标称带宽 (3dB) 200 MHz 200 MHz 200 MHz 200 MHz 95 MHz
JESD-30 代码 R-XUUC-N11 S-CQCC-N20 R-GDIP-T14 R-GDIP-T14 R-PDSO-G14
负供电电压上限 -7 V -7 V -7 V -7 V -7 V
标称负供电电压 (Vsup) -5 V -5 V -5 V -5 V -5 V
功能数量 1 4 4 4 4
端子数量 11 20 14 14 14
最小输出电流 0.02 A 0.02 A 0.02 A 0.025 A 0.02 A
封装主体材料 UNSPECIFIED CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED PLASTIC/EPOXY
封装代码 DIE QCCN DIP DIP SOP
封装形状 RECTANGULAR SQUARE RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 UNCASED CHIP CHIP CARRIER IN-LINE IN-LINE SMALL OUTLINE
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
标称压摆率 450 V/us 450 V/us 450 V/us 450 V/us 450 V/us
供电电压上限 7 V 7 V 7 V 7 V 7 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES NO NO YES
端子形式 NO LEAD NO LEAD THROUGH-HOLE THROUGH-HOLE GULL WING
端子位置 UPPER QUAD DUAL DUAL DUAL
Base Number Matches 1 1 1 1 -
是否Rohs认证 - 不符合 不符合 不符合 不符合
厂商名称 - National Semiconductor(TI ) National Semiconductor(TI ) - National Semiconductor(TI )
25C 时的最大偏置电流 (IIB) - 5 µA 5 µA 5 µA 5 µA
最大输入失调电压 - 8200 µV 8200 µV 8200 µV 5000 µV
JESD-609代码 - e0 e0 e0 e0
长度 - 8.89 mm 19.43 mm 19.43 mm -
最高工作温度 - 125 °C 125 °C 85 °C 85 °C
最低工作温度 - -55 °C -55 °C -40 °C -40 °C
封装等效代码 - LCC20,.35SQ DIP14,.3 DIP14,.3 SOP14,.25
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 - +-5 V +-5 V +-5 V +-5 V
筛选级别 - MIL-STD-883 MIL-STD-883 MIL-STD-883 -
座面最大高度 - 1.905 mm 5.08 mm 5.08 mm -
最小摆率 - 180 V/us 180 V/us 180 V/us 200 V/us
最大压摆率 - 17 mA 17 mA 17 mA 16.5 mA
技术 - BIPOLAR BIPOLAR BIPOLAR BIPOLAR
温度等级 - MILITARY MILITARY INDUSTRIAL INDUSTRIAL
端子面层 - Tin/Lead (Sn/Pb) - hot dipped Tin/Lead (Sn/Pb) - hot dipped Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子节距 - 1.27 mm 2.54 mm 2.54 mm 1.27 mm
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 - 8.89 mm 7.62 mm 7.62 mm -
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