IC BUFFER AMPLIFIER, UUC11, DIE, Buffer Amplifier
厂商名称:National Semiconductor(TI )
厂商官网:http://www.ti.com
下载文档型号 | CLC114MDC | 5962-9233901M2A | 5962-9233901MCA | CLC114AJ-MLS | CLC114AJE-TR13 |
---|---|---|---|---|---|
描述 | IC BUFFER AMPLIFIER, UUC11, DIE, Buffer Amplifier | IC QUAD BUFFER AMPLIFIER, CQCC20, LCC-20, Buffer Amplifier | IC QUAD BUFFER AMPLIFIER, CDIP14, CERDIP-14, Buffer Amplifier | IC QUAD BUFFER AMPLIFIER, CDIP14, CERDIP-14, Buffer Amplifier | IC QUAD BUFFER AMPLIFIER, PDSO14, PLASTIC, SOIC-14, Buffer Amplifier |
零件包装代码 | WAFER | QFN | DIP | DIP | SOIC |
包装说明 | DIE | QCCN, LCC20,.35SQ | DIP, DIP14,.3 | CERDIP-14 | SOP, SOP14,.25 |
针数 | 11 | 20 | 14 | 14 | 14 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
放大器类型 | BUFFER | BUFFER | BUFFER | BUFFER | BUFFER |
最大平均偏置电流 (IIB) | 5 µA | 5 µA | 5 µA | 10 µA | 5 µA |
标称带宽 (3dB) | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 95 MHz |
JESD-30 代码 | R-XUUC-N11 | S-CQCC-N20 | R-GDIP-T14 | R-GDIP-T14 | R-PDSO-G14 |
负供电电压上限 | -7 V | -7 V | -7 V | -7 V | -7 V |
标称负供电电压 (Vsup) | -5 V | -5 V | -5 V | -5 V | -5 V |
功能数量 | 1 | 4 | 4 | 4 | 4 |
端子数量 | 11 | 20 | 14 | 14 | 14 |
最小输出电流 | 0.02 A | 0.02 A | 0.02 A | 0.025 A | 0.02 A |
封装主体材料 | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY |
封装代码 | DIE | QCCN | DIP | DIP | SOP |
封装形状 | RECTANGULAR | SQUARE | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | UNCASED CHIP | CHIP CARRIER | IN-LINE | IN-LINE | SMALL OUTLINE |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
标称压摆率 | 450 V/us | 450 V/us | 450 V/us | 450 V/us | 450 V/us |
供电电压上限 | 7 V | 7 V | 7 V | 7 V | 7 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | YES | NO | NO | YES |
端子形式 | NO LEAD | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
端子位置 | UPPER | QUAD | DUAL | DUAL | DUAL |
Base Number Matches | 1 | 1 | 1 | 1 | - |
是否Rohs认证 | - | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | - | National Semiconductor(TI ) | National Semiconductor(TI ) | - | National Semiconductor(TI ) |
25C 时的最大偏置电流 (IIB) | - | 5 µA | 5 µA | 5 µA | 5 µA |
最大输入失调电压 | - | 8200 µV | 8200 µV | 8200 µV | 5000 µV |
JESD-609代码 | - | e0 | e0 | e0 | e0 |
长度 | - | 8.89 mm | 19.43 mm | 19.43 mm | - |
最高工作温度 | - | 125 °C | 125 °C | 85 °C | 85 °C |
最低工作温度 | - | -55 °C | -55 °C | -40 °C | -40 °C |
封装等效代码 | - | LCC20,.35SQ | DIP14,.3 | DIP14,.3 | SOP14,.25 |
峰值回流温度(摄氏度) | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
电源 | - | +-5 V | +-5 V | +-5 V | +-5 V |
筛选级别 | - | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | - |
座面最大高度 | - | 1.905 mm | 5.08 mm | 5.08 mm | - |
最小摆率 | - | 180 V/us | 180 V/us | 180 V/us | 200 V/us |
最大压摆率 | - | 17 mA | 17 mA | 17 mA | 16.5 mA |
技术 | - | BIPOLAR | BIPOLAR | BIPOLAR | BIPOLAR |
温度等级 | - | MILITARY | MILITARY | INDUSTRIAL | INDUSTRIAL |
端子面层 | - | Tin/Lead (Sn/Pb) - hot dipped | Tin/Lead (Sn/Pb) - hot dipped | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子节距 | - | 1.27 mm | 2.54 mm | 2.54 mm | 1.27 mm |
处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
宽度 | - | 8.89 mm | 7.62 mm | 7.62 mm | - |