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CLC501AJ-MIL

Operational Amplifier, 1 Func, 0uV Offset-Max, CDIP8, CERDIP-8

器件类别:模拟混合信号IC    放大器电路   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Rochester Electronics
零件包装代码
DIP
包装说明
DIP,
针数
8
Reach Compliance Code
unknown
ECCN代码
EAR99
放大器类型
OPERATIONAL AMPLIFIER
最大输入失调电压
JESD-30 代码
R-GDIP-T8
JESD-609代码
e0
负供电电压上限
-7 V
标称负供电电压 (Vsup)
-5 V
功能数量
1
端子数量
8
封装主体材料
CERAMIC, GLASS-SEALED
封装代码
DIP
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT SPECIFIED
座面最大高度
5.08 mm
供电电压上限
7 V
标称供电电压 (Vsup)
5 V
表面贴装
NO
端子面层
TIN LEAD
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
7.62 mm
文档预览
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CLC501 High Speed, Output Clamping Op Amp
February 2001
CLC501
High Speed, Output Clamping Op Amp
General Description
The CLC501 is a high speed current-feedback op amp with
the unique feature of output voltage clamping. This feature
allows both the maximum positive (V
HIGH
) and negative
(V
LOW
) output voltage levels to be established. This is useful
in a number of applications in which “downstream” circuitry
must be protected from over driving input signals. Not only
can this prevent damage to downstream circuitry, but can
also reduce time delays since saturation is avoided. The
CLC501’s very fast 1ns overload/clamping recovery time is
useful in applications in which information containing signals
follow overdriving signals.
Engineers designing high resolution, subranging A/D sys-
tems have long sought an amplifier capable of meeting the
demanding requirements of the residue amplifier function.
Amplifiers providing the residue function must not only settle
quickly, but recover from overdrive quickly, protect the sec-
ond stage A/D, and provide high fidelity at relatively high gain
settings. The CLC501, which excels in these areas, is the
ideal design solution in this onerous application. To further
support this application, the CLC501 is both characterized
and tested at a gain setting of +32–the most common gain
setting for residue amplifier applications.
The CLC501’s other features provide a quick, high perfor-
mance design solution. Since the CLC501’s current feed-
back design requires no external compensation, designers
need not spend their time designing compensation net-
works. The small 8-pin package and low, 180mW power
consumption make the CLC501 ideal in numerous applica-
tions having small power and size budgets.
The CLC501 is available in several versions to meet a
variety of requirements. A three letter suffix determines the
version:
Enhanced Solutions (Military/Aerospace)
SMD Number: 5962-94597
*
Space level version also available.
*
For more information, visit http://www.national.com/mil
Features
n
n
n
n
n
Output clamping (V
HIGH
and V
LOW
)
1ns recovery from clamping/overdrive
0.05% settling in 12ns
Characterized and guaranteed at A
V
= +32
Low power: 180mW
Applications
n
Residue amplifier in high accuracy, subranging A/D
systems
n
High speed communications
n
Output clamping applications
n
Pulse amplitude modulation systems
Clamped Pulse Response
DS012753-1
Connection Diagram
DS012753-3
Pinout
DIP & SOIC
DS012753-2
© 2001 National Semiconductor Corporation
DS012753
www.national.com
CLC501
Ordering Information
Package
8-Pin Plastic DIP
8-Pin Plastic SOIC
Temperature Range
Industrial
−40˚C to +85˚C
−40˚C to +85˚C
Part Number
CLC501AJP
CLC501AJE
Package
Marking
CLC501AJP
CLC501AJE
NSC
Drawing
N08E
M08A
www.national.com
2
CLC501
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC
)
I
OUT
Output is short circuit protected to
ground, but maximum reliability will
be maintained if I
OUT
does not
exceed...
Common Mode Input Voltage
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Lead Solder Duration (+300˚C)
ESD Rating (Human Body Model)
Recommended Gain Range
±
7V
−65˚C to +150˚C
10 sec
<
1000V
+7 to +50
−1 to −50
Operating Ratings
60mA
±
V
CC
+150˚C
−40˚C to +85˚C
Thermal Resistance
Package
MDIP
SOIC
JC
)
70˚C/W
65˚C/W
JA
)
125˚C/W
145˚C/W
Electrical Characteristics
(A
V
= +32, V
CC
=
±
5 V, R
L
= 100Ω, R
f
= 1.5Ω, V
H
= +3V; unless specified)
Symbol
Ambient Temperature
Frequency Domain Response
SSBW
SS20
–3dB Bandwidth
–3dB Bandwidth
Gain Flatness
GFPL
GFPH
GFR
LPD
TRS
TRL
TSP
OS
SR
HD2
HD3
SNF
INV
OVC
TSO
CDR
VOC
ICL
CBW
CMC
VIO
DVIO
IBN
Settling Time to
±
0.05%
Overshoot
Slew Rate
2nd Harmonic Distortion
3rd Harmonic Distortion
Equivalent Input Noise
Noise Floor
Integrated Noise
Overshoot in Clamp
Overload Recovery from Clamp
V
io
Drift after Recovery
Clamp Accuracy(Note 3)
Input Bias Current on V
H
, V
L
–3dB Bandwidth
Useful Clamping Range
Input Offset Voltage(Note 3)
Average Temperature
Coefficient
Input Bias Current(Note 3)
Non-Inverting
V
L
,V
H
= 2V
PP
V
H
or V
L
1.5
10
10
2V
PP
, 20MHz
2V
PP
, 20MHz
Peaking
Peaking
Rolloff
Linear Phase Deviation
Rise and Fall Time
V
OUT
<
5V
PP
@
A
V
= +20, V
OUT
Parameters
Condition
CLC501AJ
Typ
+25˚C
75
Max & Min Ratings(Note
2)
−40˚C
+25˚C
+85˚C
Units
<
110
>
60
>
85
>
60
>
85
>
45
>
55
MHz
MHz
2V
PP
V
OUT
<
5V
PP
<
15MHz
>
15MHz
<
30MHz
DC to 30MHz
2V Step
5V Step
2V Step
2V Step
0
0
0.2
0.2
4.7
5.5
12
0
1200
−45
−60
−158
28
5
1
150
0.1
20
50
<
0.1
<
0.2
<
1.0
<
1.0
<
5.8
<
6.5
<
18
<
5
>
800
<
−30
<
−45
<
−156
<
35
<
0.1
<
0.2
<
1.0
<
1.0
<
5.8
<
6.5
<
18
<
5
>
800
<
−33
<
−50
<
−156
<
35
<
15
<
3
<
200
<
0.2
<
50
<
0.1
<
0.2
<
1.3
<
1.0
<
7.8
<
8.0
<
24
<
5
>
700
<
−30
<
−50
<
−155
<
40
dB
dB
dB
deg
ns
ns
ns
%
V/µs
dBc
dBc
dBm
(1Hz)
µV
%
ns
µV
V
µA
MHz
V
mV
µV/˚C
µA
Time Domain Response
Distortion And Noise Response
>
1MHz
1MHZ to 100MHz
32x Overdrive
32x Overdrive
Clamp Performance
>
2x Overdrive
<
3
<
200
<
0.2
<
100
<
3
<
200
<
0.2
<
50
<
±
3.0
<
4.6
<
20
<
37
<
±
3.3
<
3.0
<
±
3.3
<
5.0
<
20
<
35
Static, DC Performance
<
25
3
www.national.com
CLC501
Electrical Characteristics
Symbol
DIBN
IBI
DIBI
PSRR
CMRR
ICC
RIN
CIN
RO
CMIR
VO
IO
IO
Output Impedance
Common Mode Input Range
Output Voltage Range
Output Current
Parameters
Average Temperature
Coefficient
Input Bias Current(Note 3)
Average Temperature
Coefficient
Power Supply Rejection Ratio
Common Mode Rejection Ratio
Supply Current(Note 3)
Non-Inverting Input
(Continued)
(A
V
= +32, V
CC
=
±
5 V, R
L
= 100Ω, R
f
= 1.5Ω, V
H
= +3V; unless specified)
Condition
Typ
100
Inverting
10
100
70
70
No Load
Resistance
Capacitance
at DC
No Load
−40˚C to +85˚C
−55˚C to +125˚C
18
150
4
0.2
3.0
Max & Min Ratings(Note
2)
Units
nA/˚C
µA
nA/˚C
dB
dB
mA
kΩ
pF
V
V
mA
mA
Static, DC Performance
<
150
<
46
<
200
>
55
>
55
<
25
>
50
<
7
<
0.3
>
2.0
>
±
3.0
>
±
35
>
±
30
<
100
<
40
<
100
>
60
>
60
<
24
>
100
<
7
<
0.3
>
2.5
>
±
3.2
>
±
50
>
±
50
<
30
>
60
>
60
<
24
>
100
<
7
<
0.3
>
2.5
>
±
3.2
>
±
50
>
±
50
Miscellaneous Performance
±
3.5V
±
60
±
60
Note 1:
“Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2:
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Individual parameters are tested as
noted. Outgoing quality levels are determined from tested parameters.
Note 3:
AJ 100% tested at +25˚C, sample at +85˚C
Typical Performance Characteristics
+3V, V
L
= −3V)
Non-Inverting Frequency Response
(T
A
= 25˚, A
V
= +32, V
CC
=
±
5V, R
L
= 100Ω, R
f
= 1.5Ω, V
H
=
Inverting Frequency Response
DS012753-4
DS012753-5
www.national.com
4
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参数对比
与CLC501AJ-MIL相近的元器件有:CLC501AJE-TR13、CLC501AJP。描述及对比如下:
型号 CLC501AJ-MIL CLC501AJE-TR13 CLC501AJP
描述 Operational Amplifier, 1 Func, 0uV Offset-Max, CDIP8, CERDIP-8 OP-AMP, 3000 uV OFFSET-MAX, PDSO8, PLASTIC, SOIC-8 Operational Amplifier, 1 Func, 3000uV Offset-Max, BIPolar, PDIP8, PLASTIC, DIP-8
是否无铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合
零件包装代码 DIP SOIC DIP
包装说明 DIP, SOP, DIP, DIP8,.3
针数 8 8 8
Reach Compliance Code unknown unknown unknown
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
最大输入失调电压 - 3000 µV 3000 µV
JESD-30 代码 R-GDIP-T8 R-PDSO-G8 R-PDIP-T8
JESD-609代码 e0 e0 e0
负供电电压上限 -7 V -7 V -7 V
标称负供电电压 (Vsup) -5 V -5 V -5 V
功能数量 1 1 1
端子数量 8 8 8
封装主体材料 CERAMIC, GLASS-SEALED PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP SOP DIP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE SMALL OUTLINE IN-LINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
供电电压上限 7 V 7 V 7 V
标称供电电压 (Vsup) 5 V 5 V 5 V
表面贴装 NO YES NO
端子面层 TIN LEAD TIN LEAD TIN LEAD
端子形式 THROUGH-HOLE GULL WING THROUGH-HOLE
端子位置 DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
厂商名称 Rochester Electronics - Rochester Electronics
ECCN代码 EAR99 - EAR99
座面最大高度 5.08 mm - 5.08 mm
端子节距 2.54 mm - 2.54 mm
宽度 7.62 mm - 7.62 mm
标称共模抑制比 - 70 dB 70 dB
最高工作温度 - 85 °C 85 °C
最低工作温度 - -40 °C -40 °C
标称压摆率 - 1200 V/us 1200 V/us
温度等级 - INDUSTRIAL INDUSTRIAL
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