CLC505
High-Speed, Programmable-Supply Current, Momolithic Op Amp
June 1999
N
CLC505
High-Speed, Programmable-Supply Current,
Monolithic Op Amp
General Description
Features
s
s
s
s
s
s
10mW power consumption
with 50MHz BW
Single-resistor programming of
supply current
3.4mA I
cc
provides 100MHz bandwidth
and 14ns settling (0.05%)
Fast disable capability
0.04% differential gain at I
cc
= 3.4mA
0.06% differential phase at I
cc
= 3.4mA
Low-power/battery applications
Remote site instrumentation
Mobile communications gear
Video switching matrix
Phased-array radar
Applications
s
s
s
s
s
CLC505AJE
CLC505ALC
-40°C to +85°C
-40°C to +85°C
8-pin plastic SOIC
dice
Contact factory for other packages and DESC SMD number.
Package Dimensions
Pinout
DIP & SOIC
© 1999 National Semiconductor Corporation
Printed in the U.S.A.
http://www.national.com
CLC505 Electrical Characteristics
(A
v
= +6,V
cc
= ±5V, R
f
= 1000Ω, C
p
= 100pF; unless specified)
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are
determined from tested parameters.
Absolute Maximum Ratings
Miscellaneous Ratings
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2
CLC505 Electrical Characteristics
(A
v
= +6,V
cc
= ±5V, R
f
= 1000Ω, C
p
= 100pF; unless specified)
<±10.0
<±7.0
<±8.0
Package Thermal Resistance
Package
AJE
θ
JC
60
°
C/W
θ
JA
140
°
C/W
Notes
Reliability Information
Transistor Count
30
3
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Ω
Typical Performance Characteristics
(T
A
= 25°, A
v
= +6, V
CC
= ±5V, R
f
= 1000Ω, V
H
= +3V, C
p
= 100pF)
Non-Inverting Frequency Response
V
out
= 2V
pp
A
v
= 2
R
f
= 3.01kΩ
Non-Inverting Frequency Response
V
out
= 2V
pp
A
v
= 2
R
f
= 3.01kΩ
Non-Inverting Frequency Response
V
out
= 2V
pp
A
v
= 2
R
f
= 1kΩ
A
v
= 6
R
f
= 1kΩ
Phase (deg)
Phase (deg)
Magnitude (1dB/div)
Magnitude (1dB/div)
0
-90
A
v
= 20
R
f
= 249Ω
A
v
= 6
R
f
= 1kΩ
0
-90
A
v
= 20
R
f
= 500Ω
A
v
= 6
R
f
= 1kΩ
Magnitude (1dB/div)
-180
-270
-360
-450
100
Phase (deg)
0
-90
A
v
= 20
R
f
= 1kΩ
-180
-270
-360
-450
100
-180
-270
-360
1
Frequency (MHz)
10
1
Frequency (MHz)
10
0.1
1
Frequency (MHz)
10
-450
100
F
(MH )
Inverting Frequency Response
V
out
= 2V
pp
A
v
= -2
R
f
= 1.1kΩ
Inverting Frequency Response
V
out
= 2V
pp
A
v
= -6
R
f
= 866Ω
A
v
= -20
R
f
= 549Ω
Inverting Frequency Response
V
out
= 2V
pp
A
v
= -2
R
f
= 2.87kΩ
A
v
= -1
R
f
= 3.48kΩ
Phase (deg)
Phase (deg)
Phase (deg)
Magnitude (1dB/div)
Magnitude (1dB/div)
Magnitude (1dB/div)
A
v
= -1
R
f
= 1.1kΩ
-180
-270
-360
A
v
= -20
R
f
= 787Ω
A
v
= -6
R
f
= 866Ω
-180
-270
A
v
= -1
R
f
= 1.651kΩ
A
v
= -2
R
f
= 1.5kΩ
-180
-270
A
v
= -20
R
f
= 1kΩ
A
v
= -6
R
f
= 1.43kΩ
-360
-450
-540
-630
100
-360
-450
-540
10
-630
100
-450
-540
-630
100
1
Frequency (MHz)
10
1
Frequency (MHz)
10
0
1
Frequency (MHz)
(
)
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4
Ω
Typical Performance Characteristics
(T
A
= 25°, A
v
= +6, V
CC
= ±5V, R
f
= 1000Ω, V
H
= +3V, C
p
= 100pF)
+
-
R
s
C
L
Av = +6
1kΩ
+
-
R
s
C
L
Av = +6
1kΩ
+
-
R
s
C
L
Av = +6
1kΩ
5
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