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CLC5632IM

DUAL BUFFER AMPLIFIER, PDSO8, SOIC-8

器件类别:模拟混合信号IC    放大器电路   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Rochester Electronics
零件包装代码
SOIC
包装说明
SOP,
针数
8
Reach Compliance Code
unknown
放大器类型
BUFFER
最大平均偏置电流 (IIB)
24 µA
标称带宽 (3dB)
90 MHz
最大输入失调电压
35000 µV
JESD-30 代码
R-PDSO-G8
JESD-609代码
e0
长度
4.9 mm
湿度敏感等级
NOT SPECIFIED
负供电电压上限
标称负供电电压 (Vsup)
功能数量
2
端子数量
8
最高工作温度
85 °C
最低工作温度
-40 °C
最小输出电流
0.04 A
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
COMMERCIAL
座面最大高度
1.75 mm
标称压摆率
290 V/us
供电电压上限
14 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
BIPOLAR
温度等级
INDUSTRIAL
端子面层
TIN LEAD
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
3.9 mm
文档预览
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CLC5632 Dual, High Output, Programmable Gain Buffer
December 2000
CLC5632
Dual, High Output, Programmable Gain Buffer
General Description
The CLC5632 is a dual, low cost, high speed (130MHz)
buffer which features user programmable gains of +2, +1,
and −1V/V. The CLC5632 also has a new output stage that
delivers high output drive current (130mA), but consumes
minimal quiescent supply current (3.0mA/ch) from a single
5V supply. Its current feedback architecture, fabricated in an
advanced complementary bipolar process, maintains consis-
tent performance over a wide range of gains and signal
levels, and has a linear phase response up to one half of the
−3dB frequency.
The CLC5632 offers 0.1dB gain flatness to 30MHz and
differential gain and phase errors of 0.08% and 0.02˚. These
features are ideal for professional and consumer video ap-
plications.
The CLC5632 offers superior dynamic performance with a
130MHz small-signal bandwidth, 410V/µs slew rate and
5.0ns rise/fall times (2V
step
). The combination of low quies-
cent power, high output current drive, and high speed per-
formance make the CLC5632 well suited for many battery
powered personal communication/computing systems. The
ability to drive low impedance, highly capacitive loads,
makes the CLC5632 ideal for single ended cable applica-
tions. It also drives low impedance loads with minimum
distortion. The CLC5632 will drive a 100Ω load with only
−82/−69dBc second/third harmonic distortion (A
V
= +2,
V
OUT
= 2V
PP
, f = 1MHz). With a 25Ω load, and the same
conditions, it produces only −71/−73dBc second/third har-
monic distortion. It is also optimized for driving high currents
into single-ended transformers and coils. When driving the
input of high resolution A/D converters, the CLC5632 pro-
vides excellent −86/−96dBc second/third harmonic distortion
(A
V
= +2, V
OUT
= 2V
PP
, f = 1MHz, R
L
= 1kΩ) and fast
settling time.
n
n
n
n
n
n
n
n
0.08%, 0.02˚ differential gain, phase
3.0mA/ch supply current
130MHz bandwidth (A
v
=+2)
−86/−96dBc HD2/HD3 (1MHz)
17ns settling to 0.05%
410V/µs slew rate
Stable for capacitive loads up to 1000pf
Single 5V to
±
5V supplies
Applications
n
n
n
n
n
n
n
Video line driver
Coaxial cable driver
Twisted pair driver
Transformer/coil driver
High capacitive load driver
Portable/battery powered applications
A/D driver
Maximum Output Voltage vs. R
L
Features
n
130mA output current
DS015003-1
Connection Diagram
DS015003-3
Pinout
DIP & SOIC
© 2000 National Semiconductor Corporation
DS015003
www.national.com
CLC5632
Typical Application
DS015003-2
Differential Line Driver with Load Impedance Conversion
Ordering Information
Package
Temperature
RangeIndustrial
−40˚C to +85˚C
CLC5632IN
CLC5632IM
CLC5632IMX
Packaging
Marking
CLC5632IN
CLC5632IM
CLC5632IM
Transport
Media
Rails
Rails
2.5k Units Tape
and Reel
NSC
Drawing
N08E
M08A
8-pin MDIP
8-pin SOIC
www.national.com
2
CLC5632
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC
-V
EE
)
Output Current (See note 4)
Common-Mode Input Voltage
Maximum Junction Temperature
Storage Temperature Range
+14V
140mA
V
EE
to V
CC
+150˚C
−65˚C to +150˚C
Lead Temperature (Soldering 10 sec)
+300˚C
Operating Ratings
Thermal Resistance
Package
MDIP
SOIC
JC
)
65˚C/W
50˚C/W
JA
)
130˚C/W
145˚C/W
+5 Electrical Characteristics
(A
V
= +2, R
L
= 100Ω, V
S
= +5V (Note 5), V
CM
= V
EE
+ (V
S
/2), R
L
tied to V
CM
; Unless Specified).
Symbol
Ambient Temperature
Frequency Domain Response
-3dB Bandwidth
−0.1dB Bandwidth
Gain Peaking
Gain Rolloff
Linear Phase Deviation
Differential Gain
Differential Phase
Time Domain Response
Rise and Fall Time
Settling Time to 0.05%
Overshoot
Slew Rate
Distortion And Noise Response
2nd Harmonic Distortion
2V
PP
, 1MHz
2V
PP
, 1MHz; R
L
= 1kΩ
2V
PP
, 5MHz
3rd Harmonic Distortion
2V
PP
,1MHz
2V
PP
, 1MHz; R
L
= 1kΩ
2V
PP
, 5MHz
Equivalent Input Noise
Voltage (e
ni
)
Non-Inverting Current (i
bn
)
Inverting Current (i
bi
)
Crosstalk (Input Referred)
Static, DC Performance
Input Offset Voltage (Note 3)
Average Drift
Input Bias Current
(Non-Inverting) (Note 3)
Average Drift
13
80
5
30
30
18
35
24
35
24
mV
µV/˚C
µA
nA/˚C
−72
−77
−63
−85
−81
−66
3.4
6.3
8.7
−80
−69
−75
−56
−82
−78
−60
4.4
8.2
11.3
−66
−72
−52
−79
−75
−58
4.9
9.0
12.4
−66
−72
−52
−79
−75
−58
4.9
9.0
12.4
dBc
dBc
dBc
dBc
dBc
dBc
nV/
pA/
pA/
dB
2V Step
1V Step
2V Step
2V Step
4.8
20
5
290
6.4
24
7
170
6.8
40
11
150
7.3
60
14
140
ns
ns
%
V/µs
V
O
=0.5V
PP
V
O
=2.0V
PP
V
O
=0.5V
PP
100
90
23
0
0.2
0.12
0.05
0.15
70
75
20
0.5
0.4
0.3
65
72
20
0.9
0.6
0.4
65
70
16
1.0
0.6
0.4
MHz
MHz
MHz
dB
dB
deg
%
deg
Parameter
Conditions
CLC5632IN/IM
Typ
+25˚C
Min/Max Ratings
(Note 2)
+25˚C
0 to
70˚C
−40 to
85˚C
Units
<
200MHz, V
O
=0.5V
PP
<
30MHz, V
O
=0.5V
PP
<
30MHz, V
O
= 0.5V
PP
NTSC, R
L
= 150Ω to
−1V
NTSC, R
L
=150Ω to
−1V
>
1MHz
>
1MHz
>
1MHz
10MHz, 1V
PP
3
www.national.com
CLC5632
+5 Electrical Characteristics
Symbol
Parameter
(Continued)
(A
V
= +2, R
L
= 100Ω, V
S
= +5V (Note 5), V
CM
= V
EE
+ (V
S
/2), R
L
tied to V
CM
; Unless Specified).
Conditions
Typ
Min/Max Ratings
(Note 2)
Units
Static, DC Performance
Gain Accuracy
Internal Resistors (R
f
, R
g
)
Power supply Rejection Ratio
Common Mode Rejection Ratio
Supply Current (Note 3)
Miscellaneous Performance
Input Resistance (Non-Inverting)
Input Capacitance
(Non-Inverting)
Input Voltage Range, High
Input Voltage Range, Low
Output Voltage Range, High
Output Voltage Range, Low
Output Voltage Range, High
Output Voltage Range, Low
Output Current (Note 4)
Output Resistance, Closed Loop
DC
R
L
= 100Ω
R
L
= 100Ω
R
L
=
R
L
=
0.38
2.2
4.2
0.8
4.0
1.0
4.1
0.9
100
400
0.27
3.3
4.1
0.9
3.9
1.1
4.0
1.0
80
600
0.24
3.3
4.0
1.0
3.8
1.2
4.0
1.0
65
600
0.24
3.3
4.0
1.0
3.8
1.2
3.9
1.1
40
600
MΩ
pF
V
V
V
V
V
V
mA
mΩ
DC
DC
R
L
=
±
0.3
1000
48
46
3.0
±
1.5
±
20%
45
44
3.4
±
2.0
±
26%
43
42
3.6
±
2.0
±
30%
43
42
3.6
%
dB
dB
mA
±
5 Electrical Characteristics
(A
V
= +2, R
L
= 100Ω, V
CC
=
±
5V; Unless Specified).
Symbol
Ambient Temperature
Frequency Domain Response
-3dB Bandwidth
−0.1dB Bandwidth
Gain Peaking
Gain Rolloff
Linear Phase Deviation
Differential Gain
Differential Phase
Time Domain Response
Rise and Fall Rime
Settling Time to 0.05%
Overshoot
Slew Rate
Distortion And Noise Response
2nd Harmonic Distortion
2V
PP
,1MHz
2V
PP
, 1MHz; R
L
=1kΩ
2V
PP
, 5MHz
3rd Harmonic Distortion
2V
PP
,1MHz
2V
PP
, 1MHz; R
L
= 1KΩ
2V
PP
, 5MHz
−82
−86
−66
−69
−96
−71
−74
−82
−61
−63
−91
−66
−72
−80
−59
−61
−88
−64
−72
−68
−59
−68
−88
−64
dBc
dBc
dBc
dBc
dBc
dBc
2V Step
2V Step
2V Step
2V Step
5.0
17
14
410
6.5
28
17
310
7.0
40
18
240
7.7
60
19
225
ns
ns
%
V/µs
V
O
=1.0V
PP
V
O
=4.0V
PP
V
O
= 1.0V
PP
130
70
30
0
0.1
0.1
0.08
0.02
100
55
25
0.5
0.3
0.2
0.16
0.04
90
52
20
0.9
0.5
0.3
90
50
20
1.0
0.5
0.3
MHz
MHz
MHz
dB
dB
deg
%
deg
Parameter
Conditions
CLC5602IN/IM
Typ
+25˚C
Min/Max Ratings
(Note 2)
+25˚C
0 to
70˚C
−40 to
85˚C
Units
<
200MHz, V
O
=
1.0V
PP
<
300MHz, V
O
=
1.0V
PP
<
30MHz, V
O
= 1.0V
PP
NTSC, R
L
= 150Ω
NTSC, R
L
= 150Ω
www.national.com
4
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参数对比
与CLC5632IM相近的元器件有:CLC5632IN。描述及对比如下:
型号 CLC5632IM CLC5632IN
描述 DUAL BUFFER AMPLIFIER, PDSO8, SOIC-8 DUAL BUFFER AMPLIFIER, PDIP8, PLASTIC, DIP-8
是否无铅 含铅 含铅
是否Rohs认证 不符合 不符合
厂商名称 Rochester Electronics Rochester Electronics
零件包装代码 SOIC DIP
包装说明 SOP, DIP,
针数 8 8
Reach Compliance Code unknown unknown
放大器类型 BUFFER BUFFER
最大平均偏置电流 (IIB) 24 µA 24 µA
标称带宽 (3dB) 90 MHz 90 MHz
最大输入失调电压 35000 µV 35000 µV
JESD-30 代码 R-PDSO-G8 R-PDIP-T8
JESD-609代码 e0 e0
长度 4.9 mm 9.817 mm
功能数量 2 2
端子数量 8 8
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
最小输出电流 0.04 A 0.04 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP DIP
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE IN-LINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
认证状态 COMMERCIAL COMMERCIAL
座面最大高度 1.75 mm 5.08 mm
标称压摆率 290 V/us 290 V/us
供电电压上限 14 V 14 V
标称供电电压 (Vsup) 5 V 5 V
表面贴装 YES NO
技术 BIPOLAR BIPOLAR
温度等级 INDUSTRIAL INDUSTRIAL
端子面层 TIN LEAD TIN LEAD
端子形式 GULL WING THROUGH-HOLE
端子节距 1.27 mm 2.54 mm
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
宽度 3.9 mm 7.62 mm
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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