MITSUBISHI HVIGBT MODULES
CM1600HC-34H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1600HC-34H
q
I
C ................................................................
1600A
q
V
CES .......................................................
1700V
q
Insulated Type
q
1-element in a Pack
q
AISiC Baseplate
q
Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130
114
57
±0.25
57
±0.25
4 - M8 NUTS
C
C
C
C
C
20
124
±0.25
CM
E
E
140
30
G
E
E
E
E
C
G
CIRCUIT DIAGRAM
16.5
3 - M4 NUTS
2.5
18.5
61.5
screwing depth
min. 7.7
6 -
φ
7 MOUNTING HOLES
5
screwing depth
min. 11.7
35
11
14.5
18
38
+1
0
28
+1
0
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
31.5
5
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1600HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 2)
I
EM (Note 2)
P
C (Note 3)
T
j
T
op
T
stg
V
iso
t
psc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum power dissipation
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
V
GE
= 0V, T
j
= 25°C
V
CE
= 0V, T
j
= 25°C
T
C
= 80°C
Pulse
Pulse
T
C
= 25°C, IGBT part
Conditions
Ratings
1700
±20
1600
3200
1600
3200
12500
–40 ~ +150
–40 ~ +125
–40 ~ +125
4000
10
Unit
V
V
A
A
A
A
W
°C
°C
°C
V
µs
(Note 1)
(Note 1)
RMS, sinusoidal, f = 60Hz, t = 1min.
V
CC
= 1150V, V
CES
≤
1700V, V
GE
= 15V
T
j
= 125°C
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
g
V
EC (Note 2)
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
t
rr (Note 2)
Q
rr (Note 2)
E
rec (Note 2)
Note 1.
2.
3.
4.
Item
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Emitter-collector voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Reverse recovery time
Reverse recovery charge
Reverse recovery energy
Conditions
V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C
I
C
= 160mA, V
CE
= 10V, T
j
= 25°C
V
GE
= V
GES
, V
CE
= 0V, T
j
= 25°C
I
C
= 1600A, V
GE
= 15V, T
j
= 25°C
I
C
= 1600A, V
GE
= 15V, T
j
= 125°C
V
CE
= 10V, f = 100kHz
V
GE
= 0V, T
j
= 25°C
V
CC
= 850V, I
C
= 1600A, V
GE
= 15V, T
j
= 25°C
I
E
= 1600A, V
GE
= 0V, T
j
= 25°C
(Note 4)
I
E
= 1600A, V
GE
= 0V, T
j
= 125°C
(Note 4)
V
CC
= 850V, I
C
= 1600A, V
GE
=
±15V
R
G(on)
= 1.6Ω, T
j
= 125°C, L
s
= 100nH
Inductive load
V
CC
= 850V, I
C
= 1600A, V
GE
=
±15V
R
G(off)
= 1.6Ω, T
j
= 125°C, L
s
= 100nH
Inductive load
V
CC
= 850V, I
C
= 1600A, V
GE
=
±15V
R
G(on)
= 1.6Ω, T
j
= 125°C, L
s
= 100nH
Inductive load
Min
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
—
5.5
—
2.60
3.10
140
20.0
7.6
13.2
2.30
1.85
—
—
540
—
—
580
—
420
220
Max
24
6.5
0.5
3.30
—
—
—
—
—
3.00
—
1.60
1.30
—
2.70
0.80
—
2.70
—
—
Unit
mA
V
µA
V
nF
nF
nF
µC
V
µs
µs
mJ/pulse
µs
µs
mJ/pulse
µs
µC
mJ/pulse
(Note 4)
(Note 4)
Pulse width and repetition rate should be such that junction temperature (T
j
) does not exceed T
opmax
rating (125°C).
The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
Junction temperature (T
j
) should not exceed T
jmax
rating (150°C).
Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1600HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
Item
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin,
λ
grease
= 1W/m·K
Min
—
—
—
Limits
Typ
—
—
8.0
Max
10.0
17.0
—
Unit
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
Min
7.0
3.0
1.0
—
600
10.0
15.0
—
Limits
Typ
—
—
—
1.0
—
—
—
18
Max
13.0
6.0
2.0
—
—
—
—
—
Unit
M
—
CTI
d
a
d
s
L
C-E(int)
Mounting torque
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
N·m
kg
—
mm
mm
nH
IGBT part
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1600HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
3200
T
j
= 25°C
2800
V
GE
= 12V
V
GE
= 15V
2800
3200
TRANSFER CHARACTERISTICS
(TYPICAL)
V
CE
= 10V
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
2400
2000
1600
1200
800
V
GE
= 20V
2400
2000
1600
1200
800
400
0
V
GE
= 10V
V
GE
= 8V
400
0
T
j
= 25°C
T
j
= 125°C
0
2
4
6
8
10
12
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
5
V
GE
= 15V
4
EMITTER-COLLECTOR VOLTAGE (V)
T
j
= 25°C
T
j
= 125°C
4
3
3
2
2
1
1
T
j
= 25°C
T
j
= 125°C
0
0
800
1600
2400
3200
0
0
800
1600
2400
3200
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1600HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10
3
7
5
3
2
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
V
CC
= 850V, I
C
= 1600A
T
j
= 25°C
V
GE
= 0V, T
j
= 25°C
f = 100kHz
C
ies
CAPACITANCE (nF)
10
2
7
5
3
2
GATE-EMITTER VOLTAGE (V)
5 7
10
2
16
12
C
oes
8
10
1
7
5
3
2
C
res
4
10
0 -1
10
2 3
5 7
10
0
2 3
5 7
10
1
2 3
0
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE (
µC
)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
2000
V
CC
= 850V, V
GE
=
±15V
R
G(on)
= R
G(off)
= 1.6Ω
T
j
= 125°C, Inductive load
2400
E
on
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
V
CC
= 850V, I
C
= 1600A
V
GE
=
±15V
T
j
= 125°C, Inductive load
E
on
SWITCHING ENERGIES (mJ/pulse)
1600
SWITCHING ENERGIES (mJ/pulse)
2000
1600
1200
E
off
800
1200
E
off
800
400
E
rec
400
E
rec
0
0
800
1600
2400
3200
0
0
2
4
6
8
10
12
COLLECTOR CURRENT (A)
GATE RESISTANCE (
Ω
)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
