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CMBT2222

SILICON PLANAR EPITAXIAL TRANSISTORS

厂商名称:CDIL

厂商官网:http://www.cdilsemi.com

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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBT2222
CMBT2222A
SILICON PLANAR EPITAXIAL TRANSISTORS
N–P–N silicon transistors
Marking
CMBT2222 = lB
CMBT2222A = lP
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
CMBT2222
CMBT2222A
Collector–base voltage (open ernitter)
V
CB0
Collector–emitter voltage (open base)
V
CE0
Emitter base voltage (open collector)
V
EB0
Collector current (d.c.)
I
C
Total power dissipation up to T
amb
= 25 °C P
tot
D.C. current gain
h
FE
I
C
= 150mA; V
CE
= 10V
h
FE
lC = 500mA; V
CE
= 10V
Transition frequency at f = 100 MHz
f
T
I
C
= 20 mA; V
CE
= 20 V
max.
max.
max.
max.
max.
60
30
5,0
600
250
100 to 300
75
40
6,0
V
V
V
mA
mW
>
>
30
250
40
300
MHz
Continental Device India Limited
Data Sheet
Page 1 of 4
CMBT2222
CMBT2222A
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
CMBT2222
CMBT2222A
Collector–base voltage (open emitter)
V
CBO
Collector–emitter voltage (open base)
V
CEO
Emitter–base voltage (open collector)
V
EBO
Collector current (d.c,)
I
C
Total power dissipation up to T
amb
= 25 °C P
tot
Storage temperature range
T
stg
Junction temperature
T
j
THERMAL RESISTANCE
From junction to ambient
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified
max.
rnax.
max.
max.
max.
max.
60
30
5,0
600
250
–55 to +150
150
75
40
6,0
V
V
V
mA
mW
°C
°C
R
th j–a
500
K/W
CMBT2222
CMBT2222A
Collector cut–off current
I
E
= 0; V
CB
= 50 V
I
E =
0; V
CB
= 60 V
I
E =
0; V
CB
= 50 V; T
i
– 125 °C
I
E
= 0; V
CB
= 60 V; T
j =
125 °C
V
EB
= 3 V; V
CE
= 60 V
Base current
with reverse biased emitter junction
V
FB
= 3V; V
CE
= 60V
Emitter cut–off current
I
C
= 0; V
EB
= 3V
Saturation voltages
I
C
= 150 mA; l
B
= 15 mA
I
CBO
I
CBO
I
CBO
I
CBO
I
CEX
<
<
<
<
<–
0,01
10
0,01
10
10
µ
A
µ
A
µ
A
µ
A
nA
I
BEX
I
EBO
<
<
400
1.3
1.6
2.6
30
60
5,0
20
10
nA
nA
V
CEsat
<
V
BEsat
<
V
BEsat
V
CEsat
<
V
BEsat
<
V
(BR)CEO
>
V
(BR)CBO
>
V
(BR)EBO
>
300
mV
V
0,6 to 1,2 V
1.0
2.0
40
75
6,0
V
V
V
V
V
I
C
= 500 mA; l
B
= 50 mA
Breakdown voltages
I
C
= 1,0µ A; I
B
= 0
I
C
= 100µA; I
E
= 0
I
C
= 0; I
E
= 10µA
Continental Device India Limited
Data Sheet
Page 2 of 4
CMBT2222
CMBT2222A
CMBT2222
CMBT2222A
D.C. current gain
h
FE
I
C
= 0,1 mA; V
CE
= 10V
h
FE
I
C
= 1 mA; V
CE
= 10V
h
FE
l
C
= 10 mA; V
CE
= 10 V
l
C
= 10 mA; V
CE
= 10 V; T
amb
= –55 °C h
FE
h
FE
I
C
= 150mA; V
CE
= 10V
I
C
= 150 mA; V
CE
= 1 V
h
FE
h
FE
I
C
= 500 mA; V
CE
= 10 V
Transition frequency at f = 100 MHz
I
C
= 20 mA; V
CE
= 20 V
Output capacitance at f = 1 MHz
I
E
= 0; V
CB
= 10V
Input capacitance at f = 1 MHz
I
C
= 0; V
EB
= 0,5V
Noise figure at R
S
= 1 kΩ
I
C
= 100µA; V
CE
= 10V; f = 1 kHz
Switching times (between 10% and 90% levels)
Turn–on time switched to I
c
= 150 mA
delay time
rise time
Turn–off time switched from I
c
= 150 mA
storage time
fall time
Small Signal Current Gain
V
CE
= 10V; I
C
= 1 mA; f = 1 KHz
>
>
>
>
>
>
35
50
75
35
100 to 300
50
30
40
f
T
Co
Ci
F
>
<
<
<
250
8,0
30
4,0
300
MHz
pF
25
pF
dB
t
d
t
r
t
s
t
f
<
<
<
<
10
25
225
60
ns
ns
ns
ns
h
fe
>
<
>
<
50
300
75
375
V
CE
= 10V; I
C
= 10mA; f = 1 KHz
h
fe
Continental Device India Limited
Data Sheet
Page 3 of 4
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdisemi.com
Continental Device India Limited
Data Sheet
Page 4 of 4
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参数对比
与CMBT2222相近的元器件有:CMBT2222A。描述及对比如下:
型号 CMBT2222 CMBT2222A
描述 SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS
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