CMPA0060002D
2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier
Cree’s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated electron
drift velocity and higher thermal conductivity. GaN HEMTs also offer
greater power density and wider bandwidths compared to Si and GaAs
transistors. This MMIC employs a distributed (traveling-wave) amplifier
design approach, enabling extremely wide bandwidths to be achieved in
a small footprint.
PN: CMPA006
0002D
Typical Performance Over 0.5-6.0 GHz
(T
C
= 25˚C)
Parameter
Gain
Saturated Output Power @ P
IN
23 dBm
Power Gain @ P
IN
23 dBm
PAE @ P
IN
23 dBm
0.5 GHz
18.7
7.0
15.4
43
1.0 GHz
17.4
6.3
15.0
40
2.5 GHz
17.6
5.7
14.5
36
4.0 GHz
17.4
4.3
13.3
28
6.0 GHz
17.6
3.6
12.5
31
Units
dB
W
dB
%
Note: V
DD
= 28 V, I
D
= 100 mA
Features
Applications
•
•
•
•
•
•
17 dB Small Signal Gain
2 W Typical P
SAT
Operation up to 28 V
High Breakdown Voltage
High Temperature Operation
Size 0.169 x 0.066 x 0.004 inches
•
•
•
•
Ultra Broadband Amplifiers
Fiber Drivers
Test Instrumentation
EMC Amplifier Drivers
017
Rev 2.0 – May 2
Subject to change without notice.
www.cree.com/wireless
1
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Drain-source Voltage
Gate-source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Thermal Resistance, Junction to Case (packaged)
1
Symbol
V
DSS
V
GS
T
STG
T
J
I
GMAX
R
θJC
Rating
84
-10, +2
-65, +150
225
2
4.0
Units
VDC
VDC
˚C
˚C
mA
˚C/W
Note
1
Eutectic die attach using 80/20 AuSn mounted to a 40 mil thick CuW carrier.
Electrical Characteristics
(Frequency = 20 MHz to 6,000 MHz unless otherwise stated; T
C
= 25˚C)
Characteristics
DC Characteristics
Gate Threshold Voltage
1
Gate Quiescent Voltage
Saturated Drain Current
2
RF Characteristics
5
Small Signal Gain
3
Input Return Loss
Output Return Loss
Output Power
4
Power Added Efficiency
Power Gain
S21
S11
S22
P
OUT
PAE
G
P
VSWR
13.5
–
–
2
–
–
18
9
11
4
30
13.0
–
–
–
–
–
–
dB
dB
dB
W
%
dB
V
DD
= 26 V, I
DQ
= 100 mA
V
DD
= 26 V, I
DQ
= 100 mA
V
DD
= 26 V, I
DQ
= 100 mA
V
DD
= 26 V, I
DQ
= 100 mA,
P
IN
= 23 dBm
V
DD
= 26 V, I
DQ
= 100 mA,
P
IN
= 23 dBm
V
DD
= 26 V, I
DQ
= 100 mA,
P
IN
= 23 dBm
No damage at all phase angles,
V
DD
= 26 V, I
DQ
= 100 mA,
P
IN
= 23 dBm
V
(GS)TH
V
GS(Q)
I
DS
-3.8
–
–
-3.0
-2.7
1.94
-2.7
–
–
V
VDC
A
V
DS
= 20 V, ∆I
D
= 2 mA
V
DD
= 26 V, I
DQ
= 100 mA
V
DS
= 6.0 V, V
GS
= 2.0 V
Symbol
Min.
Typ.
Max.
Units
Conditions
Output Mismatch Stress
–
–
5:1
Y
Notes:
1
2
3
4
5
The device will draw approximately 20-25 mA at pinch off due to the internal circuit structure.
Scaled from PCM data.
The lowest test frequency is 1.0 GHz due to the lack of a low frequency termination.
Test frequencies 1.0, 2.5, and 4.0 GHz.
All data pulsed with Pulse Width = 10 μsec, Duty Cycle = 0.1%.
Copyright © 2009-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
2
CMPA0060002D Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/wireless
Die Dimensions (units in microns)
Overall die size 4280 x 1670 (+0/-50) microns, die thickness 100 (+/-10) micron.
All Gate and Drain pads must be wire bonded for electrical connection.
Pad Number
1
2
3
4
RF IN
1
Gate Termination
Drain Termination
RF OUT
1
Function
Description
RF-Input pad. Matched to 50 ohm. Requires gate control from an exter-
nal bias –T from -2.3 V to -3.8 V.
Off Chip termination for the Gate. It needs to be DC-blocked .
Off Chip termination for the Drain. It needs to be DC-blocked.
RF-Output pad. Matched to 50 ohm. Requires Drain supply from an
external bias –T up to 26 V , 800 mA
Pad Size (microns)
200 x 150
200 x 150
200 x 150
200 x 150
Notes:
1
The RF In and Out pads have a ground-signal-ground configuration with a pitch of 1 mil (25 um)..
Die Assembly Notes:
•
•
•
•
•
•
•
Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at
www.cree.com/RF/Document-Library
Vacuum collet is the preferred method of pick-up.
The backside of the die is the Source (ground) contact.
Die back side gold plating is 5 microns thick minimum.
Thermosonic ball or wedge bonding are the preferred connection methods.
Gold wire must be used for connections.
Use the die label (XX-YY) for correct orientation.
Copyright © 2009-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
3
CMPA0060002D Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/wireless
Functional Block Diagram
This device employs a wideband, traveling wave amplifier topology. It has an internal termination for both the Drain and the
Gate, which works well over 2.5-6.0 GHz. For operation below 2.5 GHz an external termination is required. This termination needs to be
DC-blocked and suitable to withstand up to 3 W of RF power. (Refer to the reference design section for the LF-termination in this data
sheet for more details). The circuits also require external wideband Bias –T’s to supply voltage to the Gate and Drain. The Bias-T at the
Drain needs to be designed to handle 28 V and up to 800 mA.
Figure 1.
Copyright © 2009-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
4
CMPA0060002D Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/wireless
External Termination Reference Design
The following is a plot of the gain of the die only.
30
28
26
24
S21 (Die Only)
Die only
Gain (dB)
22
20
18
16
14
12
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Frequency (GHz)
Notes:
1
2
An off chip termination is needed to reduce the high gain peak at low frequencies.
The off chip termination should be designed to minimize the impact on the MMIC’s performance at higher frequencies.
LRC Reference Circuit
The Drain and Gate circuit use the same L and C components but different values for the resistor.
Figure 2.
The Drain resistor needs to be dimensioned to handle 3 W of RF dissipation for the lowest frequencies while the Gate resistor needs to
handle 0.5 W. The suppliers of the SMT components are:
L1 = 47 nH, CoilCraft PN: 0402CS –47NXJB
C1 = 470 pf Murata PN: GRM1885C2A471A01D
Copyright © 2009-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
5
CMPA0060002D Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/wireless
