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CN652

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

厂商名称:CDIL

厂商官网:http://www.cdilsemi.com

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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CN652 / CN653
TO-92
Plastic Package
E
BC
Use in Wide Variety of Industrial and Consumer Applications Including Lamp and Solenoid Drivers and
Audio Amplifier
Complementary CP752 and CP753
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC )
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Pulse Current
Collector Current Continuous
Power Dissipation @ T
a
=25ºC
Derate Above 25ºC
Power Dissipation @ T
a
=25ºC
Power Dissipation @ T
c
=25ºC
Operating and Storage Junction
Temperature Range
Thermal Resistance
Junction to Ambient
Junction to Ambient
Junction to Case
SYMBOL
V
CBO
V
CEO
V
EBO
*I
CM
I
C
P
D
**P
D
P
D
T
j
, T
stg
CN652
100
80
5
6
2
0.9
7.2
1.1
2.2
- 65 to +150
CN653
120
100
UNIT
V
V
V
A
A
W
mW/ºC
W
W
ºC
R
th (j-a) 1
R
th (j-a) 2+
R
th (j-c)
138.8
113.6
56.8
ºC/W
ºC/W
ºC/W
* Consult safe operating area graph for conditions.
**Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min
10mm x 10 mm, copper
2+ Device mounted on P.C.B with copper equal to 1sq.inch. Minimum
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
V
CBO
I
C
=100µA, I
E
=0
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut Off Current
V
CEO
V
EBO
I
CBO
I
C
=1mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=80V, I
E
=0
V
CB
=80V, I
E
=0, T
a
=100ºC
V
CB
=100V, I
E
=0
V
CB
=100V, I
E
=0,T
a
=100ºC
Emitter Cut Off Current
CN652_653Rev_2 211204E
CN652
CN653
CN652
CN653
CN652
CN653
MIN
100
120
80
100
5.0
MAX
UNIT
V
V
V
V
V
nA
µA
nA
µA
nA
100
10
100
10
100
I
EBO
V
EB
=4V, I
C
=0
Continental Device India Limited
Data Sheet
Page 1 of 5
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CN652 / CN653
TO-92
Plastic Package
E
BC
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
*** V
CE (sat)
I
C
=1A, I
B
=100mA
Collector Emitter Saturation Voltage
I
C
=2A, I
B
=200mA
Base Emitter Saturation Voltage
Base Emitter on Voltage
DC Current Gain
*** V
BE (sat)
*** V
BE (on)
*** h
FE
I
C
=1A, I
B
=100mA
I
C
=1A, V
CE
=2V
I
C
=50mA,V
CE
=2V
I
C
=500mA,V
CE
=2V
I
C
=1A, V
CE
=2V
I
C
=2A, V
CE
=2V
I
C
=100mA, V
CE
=5V, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
MIN
MAX
0.3
0.5
1.25
1.0
UNIT
V
V
V
V
70
100
55
25
140
300
Transition Frequency
Output Capacitance
SWITCHING TIMES
DESCRIPTION
Turn On Time
f
T
C
obo
MHz
30
pF
UNIT
ns
ns
Turn Off Time
*** Measured under Pulse conditions. Pulse Width=300µs. Duty Cycle<2%
µ
CN652_653Rev_2 211204E
SYMBOL
TEST CONDITION
I
C
=500mA, I
B1
=I
B2
=50mA,
t
on
V
CC
=10V
t
off
TYP
80
1200
Continental Device India Limited
Data Sheet
Page 2 of 5
CN652 / CN653
TO-92
Plastic Package
TO-92 Plastic Package
B
Dimension With 'L'
Uncontrolled
DIM
A
B
C
D
E
F
G
H
MIN.
4.32
4.45
3.18
0.41
0.35
MAX.
5.33
5.20
4.19
0.55
0.50
L
A
Solderability Ensured
Beyond 'L'
2
3
D
G
F
F
A A
K
1
D
E
SEC AA
K
L
1.982 2.082
M
1.03
1.20
All dimensions are in mm
5 DEG
1.14
1.40
1.20
1.40
12.70
M
3 2 1
Mold
Parting
Line
H
C
PIN CONFIGURATION
1. COLLECTOR
2. BASE
3. EMITTER
3 2 1
The TO-92 Package, Tape and Ammo Pack Drawings are correct as on the date of issue/revision of this Data Sheet.
The currently valid dimensions and information, may please be confirmed from the TO-92 Drawing in the Packages and
Packing Section of the Product Catalogue.
Packing Details
PACKAGE
Details
TO-92 Bulk
TO-92 T&A
1K/
polybag
2K/
ammo box
STANDARD PACK
Net Weight/ t
Qy
200 gm/ pcs
1K
645 gm/ pcs
2K
Size
3" x 7.5" x 7.5"
12.5" x 8" x 1.8"
INNER CARTON BOX
Qty
5K
2K
Size
17" x 15" x 13.5"
17" x 15" x 13.5"
OUTER CARTON BOX
Qty
80K
32K
Gr Wt
23 kgs
12.5 kgs
CN652_653Rev_2 211204E
Continental Device India Limited
Data Sheet
Page 3 of 5
CN652 / CN653
TO-92
Plastic Package
CN652_653Rev_2 211204E
Continental Device India Limited
Data Sheet
Page 4 of 5
Customer Notes
CN652 / CN653
TO-92
Plastic Package
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished in the Data Sheet and
on the CDIL Web Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies
or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any
CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for
use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete
Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do
so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdilsemi.com
CN652_653Rev_2 211204E
Continental Device India Limited
Data Sheet
Page 5 of 5
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参数对比
与CN652相近的元器件有:CN653。描述及对比如下:
型号 CN652 CN653
描述 NPN SILICON PLANAR EPITAXIAL TRANSISTORS NPN SILICON PLANAR EPITAXIAL TRANSISTORS
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