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CNW139

OPTOCOUPLER DARLINGTON OUT 8DIP

器件类别:光电子/LED   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件:CNW139

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器件参数
参数名称
属性值
通道数
1
电压 - 隔离
1000Vrms
电流传输比(最小值)
500% @ 1.6mA
输入类型
DC
输出类型
有基极的达林顿晶体管
电压 - 输出(最大值)
18V
电流 - 输出/通道
60mA
电流 - DC 正向(If)
100mA
安装类型
通孔
封装/外壳
8-DIP(0.400",10.16mm)
供应商器件封装
8-DIP
文档预览
8-PIN WIDE BODY, HIGH-GAIN
OPTOCOUPLERS
CNW138
DESCRIPTION
The CNW138 and CNW139 are high isolation voltage optocouplers, comprising an
infrared emitting AlGaAs diode, optically coupled to a high gain split Darlington
photodetector in an 8-pin wide body dual-in-line package (DIP).
N/C 1
8 V
CC
CNW139
+ 2
7 V
B
FEATURES
Wide body DIL encapsulation, with a pin distance of 10.16 mm
Minimum clearance of 9.6 mm and minimum creepage of 10 mm
High current transfer ratio
Short propagation delay times
TTL compatible
Low saturation voltage
High transient immunity
Maximum permissible voltage of 8000 V (peak) and maximum
operating isolation voltage of 1000 V (RMS) in accordance with
VDE 00884
• UL recognized (File # E90700)
V
F
_
3
6 V
O
N/C 4
5 GND
8
1
APPLICATIONS
Line receivers
Logic families ground isolation
Low power systems
Line voltage status indicator.
8
1
ABSOLUTE MAXIMUM RATINGS
Parameters
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
EMITTER
Continuous Forward Current (DC)
Reverse Voltage (DC)
(T
A
= 25°C unless otherwise specified)
Symbol
T
STG
T
OPR
T
SOL
I
F
V
R
I
F
(pk)
P
D
I
C
V
O
V
CC
V
EBO
P
D
Device
All
All
All
All
All
All
All
All
CNW138
CNW139
CNW138
CNW139
All
All
Value
-55 to +150
-55 to +85
260 for 10 sec
100
5
1
250
60
-0.5 to 7
-0.5 to 18
-0.5 to 7
-0.5 to 18
5
100
V
V
mW
V
Units
°C
°C
°C
mA
V
A
mW
mA
Forward Current - Peak (1 µs pulse, f = 300 Hz)
LED Power Dissipation (up to T
A
= 70°C)
DETECTOR
Collector Current (DC)
Output Voltage (pins 6 & 5)
Supply Voltage (pins 8 & 5)
Emitter-Base Voltage (pins 7 & 5)
Total Power Dissipation (up to T
A
= 70°C)
2001 Fairchild Semiconductor Corporation
DS300400
6/04/01
1 OF 8
www.fairchildsemi.com
8-PIN WIDE BODY, HIGH-GAIN
OPTOCOUPLERS
CNW138
ELECTRICAL CHARACTERISTICS
Parameter
EMITTER
Forward Voltage
Input Reverse Current
Diode Capacitance
DETECTOR
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Logic High Output Current
Logic High Supply Current
Logic Low Supply Current
(T
A
= 25°C Unless otherwise specified)
CNW139
INDIVIDUAL COMPONENT CHARACTERISTICS
Test Conditions
I
F
= 1.6 mA
I
F
= 1.6 mA, T
A
= 0 to 70°C
V
R
= 5 V
V
R
= 5 V, T
A
= 0 to 70°C
V
D
=0, f = 1MHz
I
C
= 1 mA
I
C
= 0.1 mA
I
F
= 0, V
O
= V
CC
= 7V, T
A
= 0 to 70°C
I
F
= 0, V
O
= V
CC
= 18V, T
A
= 0 to 70°C
I
F
= 0, I
O
= 0,V
CC
= 18 V, T
A
= 0 to 70°C
I
F
=1.6 mA, I
O
= O,V
CC
=18 V, T
A
= 0 to 70°C
Symbol
V
F
I
R
C
d
BV
CEO
BV
EBO
I
OH
I
CCH
I
CCL
Device
All
All
All
CNW138
CNW139
All
CNW138
CNW139
All
All
7
18
0.5
0.05
0.1
0.01
0.5
250
100
1
2
200
Min
1.25
1.1
Typ*
1.5
Max
1.7
1.8
10
100
Unit
V
µA
pF
V
V
µA
µA
mA
ISOLATION CHARACTERISTICS
Characteristic
Isolation Capacitance
Isolation Resistance
Input-Output Isolation Voltage
Maximum Operating Isolation Voltage
Test Conditions
V
I-O
= 0V, f = 1 MHz
V
I-O
= ±500 V (DC)
T = 1 min. (Peak value)
T = 1 min. (RMS value)
RMS value
Symbol
C
ISO
R
ISO
V
ISO
V
IORM
Min
10
12
7070
5000
1000
Typ*
0.4
10
13
Max
0.6
Units
pF
!
V
V
TRANSFER CHARACTERISTICS
Parameter
TOTAL DEVICE
Current Transfer Ratio
(T
A
= 25°C Unless otherwise specified)
Symbol
CTR
Device
CNW138
CNW139
CNW139
CNW138
V
OL
CNW139
Min
300
500
400
0.4
0.4
0.4
0.4
V
Typ*
Max
Unit
Test Conditions
I
F
= 1.6 mA, V
O
= 0.4 V, V
CC
= 4.5 V, T
A
= 0 to 70°C, DC
I
F
= 0.5 mA, V
O
= 0.4 V, V
CC
= 4.5 V, T
A
= 0 to 70°C, DC
I
F
= 1.6 mA, I
C
= 4.8 mA, V
CC
= 4.5 V, T
A
= 0 to 70°C
I
F
= 1.6 mA, I
C
= 8 mA, V
CC
= 4.5 V, T
A
= 0 to 70°C
I
F
= 5 mA, I
C
= 15 mA, V
CC
= 4.5 V, T
A
= 0 to 70°C
I
F
= 12 mA, I
C
= 24 mA, V
CC
= 4.5 V, T
A
= 0 to 70°C
%
Logic Low Output Voltage
* Typical values at T
A
= 25°C
www.fairchildsemi.com
2 OF 8
6/04/01
DS300400
8-PIN WIDE BODY, HIGH-GAIN
OPTOCOUPLERS
CNW138
SWITCHING CHARACTERISTICS
Parameter
(T
A
= 25°C Unless otherwise specified)
Symbol
Device
Min
Typ*
1.5
4
0.5
10
20
2.0
Max
10
11
T
PHL
All
25
30
1
1.1
35
70
T
PLH
All
60
115
7
11
µs
µs
Unit
CNW139
Test Conditions
R
L
= 2.2 k!, I
F
= 1.6 mA, V
CC
= 5 V
R
L
= 2.2 kΩ, I
F
= 1.6 mA, V
CC
= 5 V, 0 to 70°C
R
L
= 4.7 k!, I
F
= 0.5 mA, V
CC
= 5 V
R
L
= 4.7 kΩ, I
F
= 0.5 mA, V
CC
= 5 V, 0 to 70°C
R
L
= 270
Ω,
I
F
= 12 mA, V
CC
= 5 V
R
L
= 270
Ω,
I
F
= 12 mA, V
CC
= 5 V, 0 to 70°C
R
L
= 2.2 k!, I
F
= 1.6 mA, V
CC
= 5 V
R
L
= 2.2 kΩ, I
F
= 1.6 mA, V
CC
= 5 V, 0 to 70°C
R
L
= 4.7 k!, I
F
= 0.5 mA, V
CC
= 5 V
R
L
= 4.7 kΩ, I
F
= 0.5 mA, V
CC
= 5 V, 0 to 70°C
R
L
= 270
!,
I
F
= 12 mA, V
CC
= 5 V
R
L
= 270
Ω,
I
F
= 12 mA, V
CC
= 5 V, 0 to 70°C
Propagation delay time
to logic low at output
(Fig. 1)
Propagation delay time
to logic high at output
(Fig. 1)
TRANSIENT IMMUNITY
Parameter
Common mode transient
immunity at logic high
Common mode transient
immunity at logic low
(see Fig. 2 and note 1)
Test Conditions
Symbol
CMH
CML
CMRR
Device
All
All
All
Min
0.5
-0.5
-65
Typ*
Max
Unit
kV/µs
kV/µs
dB
R
L
= 2.2 kΩ, I
F
= 0, V
CC
= 5 V, V
CM
= 10 V
(p-p)
R
L
= 2.2 kΩ, I
F
= 1.6 mA, V
CC
= 5 V, V
CM
= 10 V
(p-p)
Common mode rejection ratio R
L
= 100
Ω,
I
C
= 45 mA, f = 10 kHz, V
CC
= 10 V
Note
1. R
CC
(kΩ) = 1 V/0.15 I
F
(mA), to protect the photodetector against high surge currents.
* Typical values at T
A
= 25°C
www.fairchildsemi.com
3 OF 8
6/04/01
DS300400
8-PIN WIDE BODY, HIGH-GAIN
OPTOCOUPLERS
CNW138
CNW139
100
µs
10
µs
+V
CC
I
F
1/f < 100
µs
R
L
0V
V
O
5V
V
I
V
O
I
F
monitor
50Ω
15 pF
t
PHL
1.5 V
1.5 V
V
OL
t
PLH
Fig. 1 Switching Times Test Circuit and Waveforms
+V
CC
tr, tf = 8 ns
10 V
V
CM
0V
90%
10%
90%
10%
R
L
I
F
tr
V
O
switch at A: I
F
= 0 mA
tf
5V
B
+
V
FF
A
V
O
V
CM
+
-
V
OL
V
O
switch at B: I
F
= 1.6 mA
pulse generator
Fig. 2 Transient Immunity Test Circuit and Waveforms
+V
CC
R
L
V
O
working voltage
Fig. 3 Logic Output Current Test Circuit
DS300400
6/04/01
4 OF 8
www.fairchildsemi.com
8-PIN WIDE BODY, HIGH-GAIN
OPTOCOUPLERS
CNW138
CNW139
Fig. 4 LED Forward Current vs. Forward Voltage
100
1.4
Fig. 5 Normalized Current Transfer Ratio
vs. Forward Current
I
F
= 1.6mA
V
CC
= 4.5V
V
O
= 0.4V
T
A
=25˚C
NORMALIZED CURRENT TRANSFER RATIO - CTR
1.2
10
T
A
= 25˚C
FORWARD CURRENT - I
F
(mA)
1.0
1
0.8
0.6
0.1
0.4
0.01
0.2
Normalized to I
F
= 1.6mA
0.0
0.1
1
0.001
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
10
FORWARD VOLTAGE - V
F
(V)
FORWARD CURRENT - I
F
(mA)
Fig. 6 Normalized Current Transfer Ratio
vs. Ambient Temperature
1.4
I
F
= 1.6mA
V
CC
= 4.5V
V
O
= 0.4V
Fig. 7 Logic Low Supply Current vs. Forward Current
12
NORMALIZED CURRENT TRANSFER RATIO
LOGIC LOW SUPPLY CURRENT - I
CCL
(mA)
1.2
10
1.0
8
V
CC
= 18V
6
V
CC
= 5V
4
0.8
0.6
0.4
0.2
Normalized to T
A
= 25˚C
2
0.0
-50
-25
0
25
50
75
100
125
0
0
5
10
15
20
25
30
35
40
45
50
AMBIENT TEMPERATURE - T
A
(˚C)
FORWARD CURRENT - I
F
(mA)
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6/04/01
DS300400
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参数对比
与CNW139相近的元器件有:CNW138、CNW138300、CNW138S、CNW139300、CNW139S。描述及对比如下:
型号 CNW139 CNW138 CNW138300 CNW138S CNW139300 CNW139S
描述 OPTOCOUPLER DARLINGTON OUT 8DIP OPTOCOUPLER DARLINGTON OUT 8DIP OPTOCOUPLER DARLINGTON OUT 8DIP OPTOCOUPLER DARLINGTON OUT SMD OPTOCOUPLER VDE DARLINGTON 8DIP OPTOCOUPLER DARLINGTON OUT SMD
通道数 1 1 1 1 1 1
电压 - 隔离 1000Vrms 1000Vrms 1000Vrms 1000Vrms 1000Vrms 1000Vrms
电流传输比(最小值) 500% @ 1.6mA 300% @ 1.6mA 300% @ 1.6mA 300% @ 1.6mA 500% @ 1.6mA 500% @ 1.6mA
输入类型 DC DC DC DC DC DC
输出类型 有基极的达林顿晶体管 有基极的达林顿晶体管 有基极的达林顿晶体管 有基极的达林顿晶体管 有基极的达林顿晶体管 有基极的达林顿晶体管
电压 - 输出(最大值) 18V 7V 7V 7V 18V 18V
电流 - 输出/通道 60mA 60mA 60mA 60mA 60mA 60mA
电流 - DC 正向(If) 100mA 100mA 100mA 100mA 100mA 100mA
安装类型 通孔 通孔 通孔 表面贴装 通孔 表面贴装
封装/外壳 8-DIP(0.400",10.16mm) 8-DIP(0.400",10.16mm) 8-DIP(0.400",10.16mm) 8-SMD,鸥翼 8-DIP(0.400",10.16mm) 8-SMD,鸥翼
供应商器件封装 8-DIP 8-DIP 8-DIP 8-SMD 8-DIP 8-SMD
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