CNY117F
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output,
no Base Connection, 110 °C Rated
FEATURES
• Operating temperature from -55 °C to +110 °C
A
C
NC
1
2
3
6 NC
5 C
4 E
• No base terminal connection for improved
common mode interface immunity
• Long term stability
• Industry standard dual-in-line package
• Material categorization: For definitions of
compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• AC adapter
• SMPS
i179004-14
• PLC
• Factory automation
• Game consoles
DESCRIPTION
The CNY117F is a 110 °C rated optocoupler consisting of a
gallium arsenide infrared emitting diode optically coupled to
a silicon planar phototransistor detector in a plastic plug-in
DIP-6 package.
The coupling device is suitable for signal transmission
between two electrically separated circuits. The potential
difference between the circuits to be coupled is not allowed
to exceed the maximum permissible reference voltages.
In contrast to the CNY117 series, the base terminal of the F
type is not connected, resulting in a substantially improved
common-mode interference immunity.
AGENCY APPROVALS
• UL file no. E52744
• cUL tested to CSA 22.2 bulletin 5A
• DIN EN 60747-5-5 (VDE 0884-5), available with option 1
• BSI: EN 60065, EN 60950-1
• FIMKO EN60950
• CQC GB8898-2011
ORDERING INFORMATION
DIP-6
Option 6
C
N
Y
1
1
7
F
-
#
CTR
BIN
X
0
#
#
T
TAPE
AND
REEL
7.62 mm
Option 7
10.16 mm
PART NUMBER
PACKAGE OPTION
> 8 mm
AGENCY CERTIFIED/PACKAGE
UL, cUL, BSI
DIP-6
DIP-6, 400 mil, option 6
SMD-6, option 7
VDE, UL, cUL, BSI
DIP-6
DIP-6, 400 mil, option 6
SMD-6, option 7
40 to 80
CNY117F-1
CNY117F-1X006
CNY117F-1X007T
40 to 80
CNY117F-1X001
CNY117F-1X016
CNY117F-1X017T
63 to 125
CNY117F-2
CNY117F-2X006
CTR (%)
100 to 200
CNY117F-3
CNY117F-3X006
CNY117F-3X007T
100 to 200
CNY117F-3X001
CNY117F-3X016
CNY117F-3X017T
160 to 320
CNY117F-4
CNY117F-4X006
CNY117F-4X007T
160 to 320
CNY117F-4X001
CNY117F-4X016
CNY117F-4X017T
CNY117F-2X007T
63 to 125
CNY117F-2X001
CNY117F-2X016
CNY117F-2X017T
Note
• Additional options may be possible, please contact sales office.
Rev. 1.8, 08-Jan-14
Document Number: 83598
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CNY117F
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
I
F
t
≤
10 μs
I
FSM
P
diss
BV
CEO
I
C
t
p
/T = 0.5, t
p
≤
10 ms
I
CM
P
diss
t = 1 min
V
ISO
T
stg
T
amb
2 mm from case,
≤
10 s
T
sld
P
diss
VALUE
6.0
60
2.5
100
70
50
100
150
5000
-55 to +150
-55 to +110
260
250
UNIT
V
mA
A
mW
V
mA
mA
mW
V
RMS
°C
°C
°C
mW
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
DC forward current
Surge forward current
Power dissipation
OUTPUT
Collector emitter breakdown voltage
Collector current
Collector peak current
Output power dissipation
COUPLER
Isolation test voltage between emitter and detector
Storage temperature range
Ambient temperature range
Soldering temperature
(1)
Total power dissipation
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
300
Coupled device
250
200
Phototransistor
150
100
IR-diode
50
0
0
20
40
60
80
100
120
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
OUTPUT
Collector emitter capacitance
Base collector capacitance
Emitter base capacitance
V
CE
= 5.0 V, f = 1.0 MHz
V
CE
= 5.0 V, f = 1.0 MHz
V
CE
= 5.0 V, f = 1.0 MHz
C
CE
C
BC
C
EB
5.2
6.5
7.5
pF
pF
pF
I
F
= 60 mA
I
R
= 10 μA
V
R
= 6.0 V
V
R
= 0 V, f = 1.0 MHz
V
F
V
BR
I
R
C
O
6.0
0.01
25
10
1.39
1.65
V
V
μA
pF
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Rev. 1.8, 08-Jan-14
Document Number: 83598
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CNY117F
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
F
= 10 mA, I
C
= 2.5 mA
CNY117F-1
CNY117F-2
CNY117F-3
CNY117F-4
PART
SYMBOL
V
CEsat
C
C
I
CEO
I
CEO
I
CEO
I
CEO
MIN.
TYP.
0.25
0.6
2.0
2.0
5.0
5.0
MAX.
0.4
50
50
100
100
UNIT
V
pF
nA
nA
nA
nA
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
COUPLER
Collector emitter, saturation voltage
Coupling capacitance
Collector emitter, leakage current
V
CE
= 10 V
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
CNY117F-1
CNY117F-2
CNY117F-3
CNY117F-4
CNY117F-1
CNY117F-2
CNY117F-3
CNY117F-4
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
40
63
100
160
13
22
34
56
TYP.
MAX.
80
125
200
320
UNIT
%
%
%
%
%
%
%
%
I
F
= 10 mA
Current transfer ratio
I
F
= 1.0 mA
30
45
70
90
Note
• Current transfer ratio I
C
/I
F
at V
CE
= 5.0 V, 25 °C and collector emitter leakage current by dash number.
SWITCHING CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
LINEAR OPERATION
(without saturation)
I
F
= 10 mA, V
CC
= 5.0 V,
Turn-on time
R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5.0 V,
Rise time
R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5.0 V,
Turn-off time
R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5.0 V,
Fall time
R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5.0 V,
Cut-off frequency
R
L
= 75
Ω
SWITCHING OPERATION
(with saturation)
I
F
= 20 mA
Turn-on time
I
F
= 10 mA
I
F
= 5.0 mA
I
F
= 20 mA
Rise time
I
F
= 10 mA
I
F
= 5.0 mA
I
F
= 20 mA
Turn-off time
I
F
= 10 mA
I
F
= 5.0 mA
I
F
= 20 mA
Fall time
I
F
= 10 mA
I
F
= 5.0 mA
Rev. 1.8, 08-Jan-14
PART
SYMBOL
t
on
t
r
t
off
t
f
f
CO
CNY117F-1
CNY117F-2
CNY117F-3
CNY117F-4
CNY117F-1
CNY117F-2
CNY117F-3
CNY117F-4
CNY117F-1
CNY117F-2
CNY117F-3
CNY117F-4
CNY117F-1
CNY117F-2
CNY117F-3
CNY117F-4
t
on
t
on
t
on
t
on
t
r
t
r
t
r
t
r
t
off
t
off
t
off
t
off
t
f
t
f
t
f
t
f
MIN.
TYP.
3.0
2.0
2.3
2.0
110
MAX.
UNIT
μs
μs
μs
μs
kHz
3.0
4.2
4.2
6.0
2.0
3.0
3.0
4.6
18
23
23
25
11
14
14
15
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
Document Number: 83598
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CNY117F
www.vishay.com
I
F
0
I
F
+5V
Vishay Semiconductors
I
F
0
I
C
t
p
t
R
G
= 50
Ω
t
p
= 0.01
T
t
p
= 50 µs
Channel I
Channel II
50
Ω
95 10804-3
100 %
90 %
Oscilloscope
R
L
= 1 MΩ
C
L
= 20 pF
10 %
0
t
r
t
d
t
on
t
p
t
d
t
r
t
on
(= t
d
+ t
r
)
Pulse duration
Delay time
Rise time
Turn-on time
t
s
t
f
t
off
t
s
t
f
t
off
(= t
s
+ t
f
)
Storage time
Fall time
Turn-off time
96 11698
R
L
t
Fig. 2 - Test Circuit, Non-Saturated Operation
I
F
0
I
F
= 10 mA
+5V
I
C
Fig. 4 - Switching Times
R
G
= 50
Ω
t
p
= 0.01
T
t
p
= 50 µs
Channel I
Channel II
50
Ω
95 10843
Oscilloscope
R
L
≥
1 MΩ
C
L
≤
20 pF
1 kΩ
Fig. 3 - Test Circuit, Saturated Operation
SAFETY AND INSULATION RATINGS
PARAMETER
MAXIMUM SAFETY RATINGS
Output safety power
Input safety current
Safety temperature
Comparative tracking index
INSULATION RATED PARAMETERS
Maximum withstanding isolation voltage
Maximum transient isolation voltage
Maximum repetitive peak isolation voltage
Insulation resistance
Isolation resistance
T
amb
= 25 °C, V
DC
= 500 V
T
amb
= 100 °C, V
DC
= 500 V
V
ISO
V
IOTM
V
IORM
R
IO
R
IO
≥
5000
8000
890
10
12
≥
10
11
55/115/21
2
≥
7
≥
7
≥
8
≥
8
DTI
≥
0.4
mm
mm
mm
mm
mm
V
RMS
V
peak
V
peak
Ω
Ω
P
SO
I
SI
T
SI
CTI
700
400
175
175
mW
mA
°C
SYMBOL
VALUE
UNIT
Climatic classification (according to IEC 68 part 1)
Environment (pollution degree in accordance to DIN VDE 0109)
Creepage distance
Clearance distance
Insulation thickness
Standard DIP-4
SMD
Standard DIP-4
SMD
Note
• As per DIN EN 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of protective circuits.
Rev. 1.8, 08-Jan-14
Document Number: 83598
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CNY117F
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
1.8
1.7
T
amb
= 0 °C
1.6
T
amb
= - 25 °C
1.5
1.4
T
amb
= - 40 °C
1.3
T = - 55 °C
amb
1.2
1.1
T
amb
= 25 °C
1.0
T
amb
= 50 °C
0.9
T
amb
= 75 °C
0.8
T
amb
= 100 °C
0.7
T
amb
= 110 °C
0.6
0.1
1
10
100
I
F
- Forward Current (mA)
10 000
I
F
= 0 mA
I
CE0
- Leakage Current (nA)
1000
V
CE
= 40 V
V
F
- Forward Voltage (V)
100
10
1
0.1
0.01
0.001
- 60 - 40 - 20
V
CE
= 24 V
V
CE
= 12 V
0
20
40
60
80 100
T
amb
- Ambient Temperature (°C)
Fig. 5 - Forward Voltage vs. Forward Current
Fig. 8 - Leakage Current vs. Ambient Temperature
60
I
C
- Collector Current (mA)
50
40
I
F
= 20 mA
I
F
= 30 mA
1.2
CTR
Norm
- Normalized CTR (NS)
I
F
= 10 mA
V
CE
= 5 V
1.0
0.8
0.6
0.4
0.2
0
-60 -40 -20
30
I
F
= 15 mA
20
10
0
0
1
2
3
4
5
I
F
= 10 mA
I
F
= 5 mA
6
7
8
0
20
40
60
80 100 120
V
CE
- Collector Emitter Voltage (NS) (V)
T
amb
- Ambient Temperature (°C)
Fig. 6 - Collector Current vs. Collector Emitter Voltage (NS)
Fig. 9 - Normalized CTR (NS) vs. Ambient Temperature
25
CTR
Norm
- Normalized CTR (sat)
I
F
= 25 mA
1.2
I
F
= 10 mA
V
CE
= 0.4 V
I
C
- Collector Current (mA)
20
15
I
F
= 10 mA
1.0
0.8
0.6
0.4
0.2
0
-60 -40 -20
10
I
F
= 5 mA
5
I
F
= 1 mA
I
F
= 2 mA
0
0
0.1
0.2
0.3
0.4
V
CE
- Collector Emitter Voltage (sat) (V)
0
20
40
60
80 100 120
T
amb
- Ambient Temperature (°C)
Fig. 7 - Collector Current vs. Collector Emitter Voltage (sat)
Fig. 10 - Normalized CTR (sat) vs. Ambient Temperature
Rev. 1.8, 08-Jan-14
Document Number: 83598
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
