CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers
September 2006
CNY171, CNY172, CNY173, CNY174, CNY17F1, CNY17F2,
CNY17F3, CNY17F4, MOC8101, MOC8102, MOC8103,
MOC8104, MOC8105, MOC8106, MOC8107, MOC8108
Phototransistor Optocouplers
Features
■
UL recognized (File # E90700)
■
VDE recognized
– Add option V for white package (e.g., CNY17F2VM)
– File #102497
– Add option ‘300’ for black package (e.g., CNY17F2300)
– File #94766
■
Current transfer ratio in select groups
■
High BV
CEO
—70V minimum (CNY17X/M, CNY17FX/M,
MOC8106/7/8)
■
Closely matched current transfer ratio (CTR) minimizes
unit-to-unit variation.
■
Very low coupled capacitance along with no chip to pin 6
base connection for minimum noise susceptability
(CNY17FX/M, MOC810X)
Applications
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
■
Appliance sensor systems
■
Industrial controls
Description
The CNY17, CNY17F and MOC810X devices consist of a
Gallium Arsenide IRED coupled with an NPN phototransistor
in a dual in-line package.
White Package (-M Suffix)
Black Package (No -M Suffix)
6
6
1
1
6
1
6
1
6
6
1
1
Schematic
ANODE 1
6 NC
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
CATHODE 2
5 COLLECTOR
NC 3
4 EMITTER
NC 3
4 EMITTER
CNY17F1/2/3/4
CNY17F1M/2M/3M/4M
MOC8101/2/3/4/5/6/7/8
CNY171/2/3/4
CNY171M/2M/3M/4M
©2006 Fairchild Semiconductor Corporation
1
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CNY17X, CNY17FX, MOC810X Rev. 1.0.6
CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers
Absolute Maximum Ratings
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
Storage Temperature
M
non M
Operating Temperature
M
non M
Lead Solder Temperature
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
All
M
non M
M
non M
EMITTER
I
F
V
R
I
F
(pk)
P
D
Continuous Forward Current
M
non M
Reverse Voltage
Forward Current - Peak (1 µs pulse, 300 pps)
All
M
non M
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
M
non M
M
non M
DETECTOR
I
C
V
CEO
Continuous Collector Current
Collector-Emitter Voltage
All
CNY17X/M, CNY17FX/M,
MOC8106/7/8
MOC8101/2/3/4/5
V
ECO
P
D
Emitter Collector Voltage
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
All
M
non M
M
non M
50
70
30
7
150
150
1.76
2.0
mW/°C
mA
V
V
V
mW
60
100
6
1.5
1.0
120
150
1.41
1.8
mW/°C
mW
V
A
mA
-40 to +150
-55 to +150
-40 to +100
-55 to +100
260 for 10 sec
250
250
2.94
3.30
mW/°C
°C
mW
°C
°C
Parameters
Device
Value
Units
2
CNY17X, CNY17FX, MOC810X Rev. 1.0.6
www.fairchildsemi.com
CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
(1)
Individual Component Characteristics
Symbol
EMITTER
V
F
Input Forward Voltage
I
F
= 60mA
I
F
= 10mA
C
J
I
R
Capacitance
V
F
= 0 V, f = 1.0MHz
Reverse Leakage Current V
R
= 6 V
DETECTOR
BV
CEO
Breakdown Voltage
Collector to Emitter
I
C
= 1.0mA, I
F
= 0
CNY17FX/M
CNY17X/M
MOC810X
All
All
1.0
1.0
1.35
1.15
18
0.001
10
1.65
1.50
pF
µA
V
Parameters
Test Conditions
Device
Min.
Typ.
Max.
Units
MOC8101/2/3/4/5
MOC8106/7/8
CNY17F1/2/3/4/M
CNY171/2/3/4/M
CNY171/2/3/4/M
All
All
CNY171/2/3/4/M
All
CNY171/2/3/4/M
CNY171/2/3/4/M
30
70
100
100
V
BV
CBO
BV
ECO
I
CEO
I
CBO
C
CE
C
CB
C
EB
Collector to Base
Emitter to Collector
Leakage Current
Collector to Emitter
Collector to Base
Capacitance
Collector to Emitter
Collector to Base
Emitter to Base
I
C
= 10µA, I
F
= 0
I
E
= 100µA, I
F
= 0
V
CE
= 10 V, I
F
= 0
V
CB
= 10 V, I
F
= 0
V
CE
= 0, f = 1MHz
V
CB
= 0, f = 1MHz
V
EB
= 0, f = 1MHz
70
7
120
10
1
50
20
8
20
10
nA
nA
pF
pF
pF
Isolation Characteristics
Symbol
V
ISO
Characteristic
Input-Output Isolation Voltage
Test Conditions
f = 60 Hz, t = 1 min.,
I
I-O
≤
2µA
(4)
f = 60 Hz, t = 1 sec.,
I
I-O
≤
2µA
(4)
Device
Black Package
‘M’ White Package
All
Black Package
‘M’ White Package
Min.
5300
7500
10
11
Typ.** Max.
Units
Vac(rms)*
Vac(pk)
Ω
R
ISO
C
ISO
Isolation Resistance
Isolation Capacitance
V
I-O
= 500 VDC
(4)
V
I-O
= Ø, f = 1MHz
(4)
0.5
0.2
pF
Note:
* 5300 Vac(rms) for 1 minute equates to approximately 9000 Vac (pk) for 1 second
** Typical values at T
A
= 25°C
3
CNY17X, CNY17FX, MOC810X Rev. 1.0.6
www.fairchildsemi.com
CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers
Transfer Characteristics
(T
A
= 25°C Unless otherwise specified.)
(1)
Symbol
COUPLED
(CTR)
(2)
Output Collector
Current
MOC8101
MOC8102
MOC8103
MOC8104
MOC8105
MOC8106
MOC8107
MOC8108
CNY17F1/1M
CNY17F2/2M
CNY17F3/3M
CNY17F4/4M
CNY171/1M
CNY172/2M
CNY173/3M
CNY174/4M
V
CE(sat)
Collector-Emitter
Saturation Voltage
CNY17XM/FXM
I
C
= 2.5mA, I
F
= 10mA
I
F
= 10mA, I
C
= 2.5mA
I
F
= 10mA, V
CE
= 5V
I
F
= 10mA, V
CE
= 10V
50
73
108
160
65
50
100
250
40
63
100
160
40
63
100
160
80
117
173
256
133
150
300
600
80
125
200
320
80
125
200
320
0.4
V
%
DC Characteristics
Test Conditions
Min.
Typ.
Max.
Units
MOC8101/2/3/4/5/6/7/8 I
C
= 500µA, I
F
= 5.0mA
CNY17X/FX
0.3
V
Symbol
t
on
AC Characteristics
(3)
Turn-On Time
MOC8101/2/3/4/5
MOC8106/7/8
CNY17X/FX
Test Conditions
I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
Ω
Min. Typ.* Max.
2
20
Units
µs
NON-SATURATED SWITCHING TIME
10
I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
Ω
3
20
t
off
Turn-Off Time
MOC8101/2/3/4/5
MOC8106/7/8
CNY17X/FX
10
I
F
= 10mA, V
CC
= 5V, R
L
= 75
Ω
I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
Ω
I
F
= 10mA, V
CC
= 5V, R
L
= 75
Ω
I
F
= 10mA, V
CC
= 5V, R
L
= 75
Ω
I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
Ω
I
F
= 10mA, V
CC
= 5V, R
L
= 75Ω
2
3.5
1
4.0
4.1
µs
µs
5.6
µs
µs
t
d
t
r
Delay Time
Rise Time
CNY17XM/FXM
All Devices
CNY17XM/FXM
t
s
t
f
Storage Time
Fall Time
CNY17XM/FXM
All Devices
CNY17XM/FXM
4
CNY17X, CNY17FX, MOC810X Rev. 1.0.6
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CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers
Transfer Characteristics
(Continued)
Symbol
t
on
(T
A
= 25°C Unless otherwise specified.)
(1)
AC Characteristics
(3)
Turn-on Time
CNY171/F1
CNY172/F2
CNY173/F3
CNY174/F4
Test Conditions
I
F
= 20mA, V
CE
= 0.4V
I
F
= 10mA, V
CE
= 0.4V
Min.
Typ.
Max. Units
5.5
8.0
µs
SATURATED SWITCHING TIMES
t
r
Rise Time
CNY171/F1
CNY172/F1
CNY173/F3
CNY174/F4
CNY171M/F1M
CNY172M/3M/4M
CNY17F2M/F3M/F4M
I
F
= 20mA, V
CE
= 0.4V
I
F
= 10mA, V
CE
= 0.4V
4.0
6.0
µs
I
F
= 20mA, V
CC
= 5V, R
L
= 1kΩ
I
F
= 10mA, V
CC
= 5V, R
L
= 1kΩ
I
F
= 20mA, V
CC
= 5V, R
L
= 1kΩ
I
F
= 10mA, V
CC
= 5V, R
L
= 1kΩ
I
F
= 20mA, V
CE
= 0.4V
I
F
= 10mA, V
CE
= 0.4V
4.0
6.0
5.5
8.0
34
39
µs
µs
Delay Time
t
d
t
off
Turn-off Time
CNY171M/F1M
CNY172M/3M/4M
CNY17F2M/F3M/F4M
CNY171/F1
CNY172/F2
CNY173/F3
CNY174/F4
t
f
Fall Time
CNY171/F1
CNY172/F2
CNY173/F3
CNY174/F4
CNY171M/F1M
CNY172M/3M/4M
CNY17F2M/F3M/F4M
I
F
= 20mA, V
CE
= 0.4V
I
F
= 10mA, V
CE
= 0.4V
20
24
µs
I
F
= 20mA, V
CC
= 5V, R
L
= 1kΩ
I
F
= 10mA, V
CC
= 5V, R
L
= 1kΩ
I
F
= 20mA, V
CC
= 5V, R
L
= 1kΩ
I
F
= 10mA, V
CC
= 5V, R
L
= 1kΩ
20.0
24.0
34.0
39.0
µs
µs
t
s
Storage Time
CNY171M/F1M
CNY172M/3M/4M
CNY17F2M/F3M/F4M
** All typicals at T
A
= 25°C
Notes:
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
3. For test circuit setup and waveforms, refer to Figures 20.
4, For this test, Pins 1 and 2 are common, and Pins 4 are 5 are common.
5
CNY17X, CNY17FX, MOC810X Rev. 1.0.6
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