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CPC5602CTR

漏源电压(Vdss):350V 连续漏极电流(Id)(25°C 时):5mA 栅源极阈值电压:- 漏源导通电阻:14mΩ @ 50mA,350mV 最大功率耗散(Ta=25°C):500W(Tc) 类型:N沟道

器件类别:分立半导体    MOS(场效应管)   

厂商名称:IXYS ( Littelfuse )

厂商官网:http://www.ixys.com/

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器件参数
参数名称
属性值
漏源电压(Vdss)
350V
连续漏极电流(Id)(25°C 时)
5mA
漏源导通电阻
14mΩ @ 50mA,350mV
最大功率耗散(Ta=25°C)
500W(Tc)
类型
N沟道
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CPC5602
I
NTEGRATED
C
IRCUITS
D
IVISION
Parameter
Drain-to-Source Voltage - V
DS
Max On-Resistance - R
DS(on)
Max Power
Rating
350
14
2.5
Units
V
W
N-Channel Depletion Mode FET
Description
The CPC5602 is an N-channel depletion mode Field
Effect Transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third generation vertical
DMOS process. The third generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. The vertical
DMOS process yields a highly reliable device,
particularly in difficult application environments such
as telecommunications, security, and power supplies.
One of the primary applications for the CPC5602 is
as a linear regulator/hook switch for the LITELINK
family of Data Access Arrangements (DAA) Devices
CPC5620A, CPC5621A, and CPC5622A.
The CPC5602 has a typical on-resistance of 8, a
drain-to-source voltage of 350V, and is available in an
SOT-223 package. As with all MOS devices, the FET
structure prevents thermal runaway and
thermal-induced secondary breakdown.
Features
350V Drain-to-Source Voltage
Depletion Mode Device Offers Low R
DS(on)
at Cold Temperatures
Low On-resistance: 8 (Typical) @ 25°C
Low V
GS(off)
Voltage: -2.0V to -3.6V
High Input Impedance
Low Input and Output Leakage
Small Package Size SOT-223
PC Card (PCMCIA) Compatible
PCB Space and Cost Savings
Applications
Support Component for LITELINK™
Data Access Arrangement (DAA)
Telecommunications
Normally On Switches
Ignition Modules
Converters
Security
Power Supplies
Ordering Information
Part #
CPC5602CTR
Description
N-Channel Depletion Mode FET, SOT-223 Pkg.
Tape and Reel (1000/Reel)
Package Pinout
D
4
2
D
1
G
3
S
Pin Number
Name
1
GATE
2
DRAIN
3
SOURCE
4
DRAIN
DS-CPC5602-R10
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1
I
NTEGRATED
C
IRCUITS
D
IVISION
Absolute Maximum Ratings @ 25ºC
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Total Package Dissipation
Operational Temperature
Storage Temperature
Symbol Ratings
V
DS
350
V
GS
±20
P
2.5
-40 to +85
T
A
T
A
-40 to +125
Units
V
V
W
o
C
o
C
CPC5602
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Electrical Characteristics @25
o
C (Unless Otherwise Specified)
Parameter
Gate-to-Source Off Voltage
Drain-to-Source Leakage Current
Drain Current
On-Resistance
Gate Leakage Current
Gate Capacitance
Symbol
V
GS(off)
I
DS(off)
I
D
R
DS(on)
I
GSS
C
ISS
Conditions
I
D
= 2µA, V
DS
=10V, V
DS
=100V
V
GS
= -5V, V
DS
=190V
V
GS
= -5V, V
DS
=350V
V
GS
= -2.7V, V
DS
=5V, V
DS
=50V
V
GS
= -0.57V, V
DS
=5V
V
GS
= -0.35V, I
DS
=50mA
V
GS
=10V, V
GS
=-10V
V
DS
= V
GS
=0V
Min
-2
-
-
-
130
-
-
-
Typ
-2.62
-
-
-
-
8
-
-
Max
-3.6
20
1
5
-
14
0.1
300
Units
V
nA
A
mA
mA
A
pF
Thermal Characteristics
Parameter
Thermal Resistance
Symbol
R
JC
Conditions
-
Min
-
Typ
-
Max
14
Units
ºC/W
2
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R10
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NTEGRATED
C
IRCUITS
D
IVISION
PERFORMANCE DATA*
0.35
0.30
0.25
I
D
(A)
0.20
0.15
0.10
0.05
0.00
0
1
2
V
DS
(V)
3
4
5
0
0.0
0.1
0.2
0.3
I
D
(A)
0.4
0.5
0.6
V
GS
=-0.5
V
GS
=-1
V
GS
=-1.5
V
GS
=-2
CPC5602
Output Characteristics
(T
A
=25ºC)
On-Resistance ( )
20
On-Resistance vs. Drain Current
(V
GS
=0V)
300
250
Transconductance vs Drain Current
(V
DS
=10V)
T
A
=-40ºC
T
A
=25ºC
T
A
=125ºC
15
G
FS
(m )
200
150
100
50
0
0
10
5
50
I
D
(mA)
100
150
250
200
I
D
(mA)
150
100
50
0
-3.0
Transfer Characteristics
(V
DS
=10V)
-2.3
-2.4
V
GS(off)
vs. Temperature
(V
DS
=10V, I
D
=2 A)
On-Resistance ( )
12
11
10
9
8
7
6
5
4
On-Resistance vs. Temperature
(V
GS
=0V, I
D
=100mA)
V
GS(off)
(V)
-1.5
-1.0
T
A
=125ºC
T
A
=25ºC
T
A
=-40ºC
-2.5
-2.6
-2.7
-2.8
-2.9
-3.0
-2.5
-2.0
V
GS
(V)
-40
-20
0
20
40
60
Temperature (ºC)
80
100
-40
-20
0
20
40
60
Temperature (ºC)
80
100
300
250
Capacitance (pF)
200
150
100
50
0
Capacitance vs. Drain-Source Voltage
(V
GS
=-5V)
Power Dissipation (W)
Power Dissipation
vs. Ambient Temperature
4.0
3.5
3.0
I
DS
(A)
2.5
2.0
1.5
1.0
0.5
0
0.001
0
20
40
60 80 100 120
Temperature (ºC)
140
160
1
0.1
1
Forward Safe Operating Bias
(V
GS
=0V, DC Load, T
C
=25ºC)
Limited by
Device Channel
Saturation
C
ISS
C
OSS
C
RSS
0.01
Limited by
Device R
DS(on)
0
5
10
15
V
DS
(V)
20
25
30
10
V
DS
(V)
100
1000
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please
contact our application department.
R10
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3
I
NTEGRATED
C
IRCUITS
D
IVISION
Manufacturing Information
Moisture Sensitivity
CPC5602
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated
Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to
the latest version of the joint industry standard,
IPC/JEDEC J-STD-020,
in force at the time of product
evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper
operation of our devices when handled according to the limitations and information in that standard as well as to any
limitations set forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of overall reliability.
This product carries a
Moisture Sensitivity Level (MSL) rating
as shown below, and should be handled according
to the requirements of the latest version of the joint industry standard
IPC/JEDEC J-STD-033.
Device
CPC5602C
Moisture Sensitivity Level (MSL) Rating
MSL 1
ESD Sensitivity
This product is
ESD Sensitive,
and should be handled according to the industry standard
JESD-625.
Soldering Profile
This product has a maximum body temperature and time rating as shown below. All other guidelines of
J-STD-020
must be observed.
Device
CPC5602C
Maximum Temperature x Time
260ºC for 30 seconds
Board Wash
IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to
remove flux residue is acceptable, and the use of a short drying bake may be necessary. Chlorine-based or
Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be
used.
4
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R10
I
NTEGRATED
C
IRCUITS
D
IVISION
MECHANICAL DIMENSIONS
CPC5602C
2.90 / 3.10
(0.114 / 0.122)
0.229 / 0.330
(0.009 / 0.013)
CPC5602
PCB Land Pattern
1.90
(0.075)
3.30 / 3.71
(0.130 / 0.146)
6.705 / 7.290
(0.264 / 0.287)
1.499 / 1.981
(0.059 / 0.078)
6.10
(0.24)
3.20
(0.126)
Pin 1
0.610 / 0.787
(0.024 / 0.031)
6.30 / 6.71
(0.248 / 0.264)
0.020 / 0.102
(0.0008 / 0.004)
0.864 / 1.067
(0.034 / 0.042)
2.286
(0.090)
1.549 / 1.803
(0.061 / 0.071)
4.597
(0.181)
Dimensions
mm MIN / mm MAX
(inches MIN / inches MAX)
0.914 MIN
(0.036 MIN)
1.90
(0.075)
2.286
(0.090)
0.90
(0.035)
CPC5602CTR Tape & Reel
177.8 Dia
(7.00 Dia)
Top Cover
Tape Thickness
0.102 Max
(0.004 Max)
5.50 ± 0.05
(0.217 ± 0.002)
2.00 ± 0.05
(0.079 ± 0.002)
4.00 ± 0.1
(0.157 ± 0.004)
1.75 ± 0.1
(0.069 ± 0.004)
W=12.08 ± 0.2
(0.476 ± 0.008)
B
0
=7.42 ± 0.1
(0.292 ± 0.004)
K
0
=1.88 ± 0.1
(0.074 ± 0.004)
Embossed
Carrier
A
0
=6.83 ± 0.1
(0.269 ± 0.004)
P=8.03 ± 0.1
(0.316 ± 0.004)
Dimensions
mm
(inches)
Embossment
For additional information please visit our website at: www.ixysic.com
IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make
changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated
Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to
its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe
property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice.
Specification: DS-CPC5602-R10
©Copyright 2015, IXYS Integrated Circuits Division
All rights reserved. Printed in USA.
7/20/2015
5
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参数对比
与CPC5602CTR相近的元器件有:。描述及对比如下:
型号 CPC5602CTR
描述 漏源电压(Vdss):350V 连续漏极电流(Id)(25°C 时):5mA 栅源极阈值电压:- 漏源导通电阻:14mΩ @ 50mA,350mV 最大功率耗散(Ta=25°C):500W(Tc) 类型:N沟道
漏源电压(Vdss) 350V
连续漏极电流(Id)(25°C 时) 5mA
漏源导通电阻 14mΩ @ 50mA,350mV
最大功率耗散(Ta=25°C) 500W(Tc)
类型 N沟道
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