Ordering number : ENA0151B
CPH3350
P-Channel Power MOSFET
–20V, –3A, 83m
Ω
, Single CPH3
Features
•
•
•
•
http://onsemi.com
Ultrahigh-speed switching
1.8V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
×0.8mm)
2
Conditions
Ratings
--20
±10
-
-3
-
-12
1.0
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7015A-004
CPH3350-TL-H
CPH3350-TL-W
0.2
Product & Package Information
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
2.9
0.6
3
0.15
Packing Type: TL
Marking
WG
TL
2.8
1.6
0.05
0.6
1
0.95
2
0.4
1 : Gate
2 : Source
3 : Drain
CPH3
Electrical Connection
3
0.9
0.2
1
2
Semiconductor Components Industries, LLC, 2013
October, 2013
O0913 TKIM TC-00002895/60612 TKIM/D1411PE TKIM TC-00002683 No. A0151-1/6
LOT No.
CPH3350
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=--3A, VGS=0V
VDS=--10V, VGS=--4.5V, ID=--3A
See specified Test Circuit.
VDS=--10V, f=1MHz
Conditions
-1mA,
VGS=0V
ID=-
-20V,
VGS=0V
VDS=-
VGS=±8V, VDS=0V
-10V,
ID=-
-1mA
VDS=-
-10V,
ID=-
-1.5A
VDS=-
-1.5A,
VGS=-
-4.5V
ID=-
-1A,
VGS=-
-2.5V
ID=-
-0.2A,
VGS=-
-1.8V
ID=-
Ratings
min
--20
-
-1
±10
--0.4
4.3
64
89
131
375
77
58
8.1
26
42
37
4.6
0.8
1.3
-
-0.83
-
-1.2
83
124
196
-
-1.3
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
0V
--4.5V
VIN
VDD= --10V
ID= --1.5A
RL=6.67Ω
D
VOUT
PW=10μs
D.C.≤1%
G
CPH3350
P.G
50Ω
S
Ordering Information
Device
CPH3350-TL-H
CPH3350-TL-W
Package
CPH3
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A0151-2/6
CPH3350
--3.0
ID -- VDS
--2.
5V
--4.5V
--5
ID -- VGS
VDS= --10V
--2.5
--1
.8V
--4
Drain Current, ID -- A
V
--2.0
Drain Current, ID -- A
--8.0V
--3.
0
--3
--1.5
--1.5V
C
--2
--1
0
0
--0.5
--1.0
--1.0
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
VGS= --1.0V
--0.8
--0.9
--1.0
25
°
C
--1.5
--0.5
Ta=7
5
°
--25
°
C
--2.0
--2.5
IT13009
Drain-to-Source Voltage, VDS -- V
300
IT13008
RDS(on) -- VGS
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V
250
RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
250
200
200
150
150
ID= --0.2A
--1.0A
--1.5A
100
100
--0.2A
, I D=
8V
= --1.
V GS
0A
= --1.
.5V, I D
--2
A
V GS=
= --1.5
.5V, I D
--4
V GS=
50
50
0
0
--1
--2
--3
--4
--5
--6
--7
--8
0
--60 --40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
10
|
y
fs
|
-- ID
IT13010
--10
7
5
3
2
Ambient Temperature, Ta --
°
C
IT13011
IS -- VSD
VGS=0V
Forward Transfer Admittance,
|
y
fs
|
-- S
7
5
3
2
VDS= --10V
--2
a=
T
5
°
C
1.0
7
5
3
2
0.1
--0.01
°
75
C
Source Current, IS -- A
--1.0
7
5
3
2
--0.1
7
5
3
2
°
C
25
--0.01
7
5
3
2
0
--0.2
--0.001
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Ta=7
5
°
C
25
°
C
--25
°
C
--0.4
--0.6
Drain Current, ID -- A
2
5 7 --10
IT13012
1000
7
5
--0.8
--1.0
--1.2
IT13013
SW Time -- ID
VDD= --10V
VGS= --4V
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
100
7
5
td (off)
tf
3
2
3
2
100
7
5
tr
10
7
5
--0.1
2
3
5
7
--1.0
2
3
5
7
--10
Coss
Crss
td(on)
3
2
0
--2
--4
--6
--8
--10
--12
--14
--16
--18
--20
Drain Current, ID -- A
IT13014
Drain-to-Source Voltage, VDS -- V
IT13015
No. A0151-3/6
CPH3350
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
1
2
3
4
5
IT13016
VGS -- Qg
VDS= --10V
ID= --3A
ASO
--100
7
5
3
2
Gate-to-Source Voltage, VGS -- V
IDP= --12A (PW≤10μs)
Drain Current, ID -- A
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
ID= --3A
DC
op
era
tio
n
Operation in this area
is limited by RDS(on).
100
μ
s
10m
1m
s
s
10
0m
s
--0.01
--0.1
Ta=25
°
C
Single pulse
When mounted on ceramic substrate (900mm
2
×0.8mm)
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Total Gate Charge, Qg -- nC
1.2
PD -- Ta
When mounted on ceramic substrate
(900mm
2
×0.8mm)
Drain-to-Source Voltage, VDS -- V
5 7 --100
IT16676
Allowable Power Dissipation, PD -- W
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT13018
No. A0151-4/6
CPH3350
Outline Drawing
CPH3350-TL-H, CPH3350-TL-W
Mass (g) Unit
0.013 mm
* For reference
Land Pattern Example
Unit: mm
0.6
1.4
0.95
0.95
2.4
No. A0151-5/6
单片机
