PROCESS
Zener Diode
CPZ28
0.5 Watt Zener Diode Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
EPITAXIAL PLANAR
13 x 13 MILS
7.8 MILS
7.0 x 7.0 MILS
Ti/Al - 13,000Å
Au-As - 13,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
101,184
PRINCIPAL DEVICE TYPES
CMPZ5221B
THRU
CMPZ5267B
R0
BACKSIDE CATHODE
R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
PROCESS
CPZ28
Typical Electrical Characteristics
R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m