SMD Ultra Fast Recovery Rectifiers
CURA101-G Thru. CURA107-G
Reverse Voltage: 50 to 1000 Volts
Forward Current: 1.0 Amp
RoHS Device
Features
-Ideal for surface mount applications.
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
-Ultra fast recovery time: 50~75nS.
-Low leakage current.
0.180(4.57)
0.160(4.06)
DO-214AC (SMA)
0.067(1.70)
0.051(1.29)
0.110(2.79)
0.086(2.18)
Mechanical data
-Case: JEDEC DO-214AC, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.063 grams
0.091(2.31)
0.067(1.70)
0.209(5.31)
0.185(4.70)
0.012(0.31)
0.006(0.15)
0.059(1.50)
0.035(0.89)
0.008(0.20)
0.004(0.10)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Parameter
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
Max. average forward current
Max. instantaneous forward
1.0A
Reverse recovery time
Max. DC reverse current at T
A
=25
rated DC blocking voltage T
A
=100
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
O
Symbol
V
RRM
V
DC
V
RMS
CURA
101-G
50
50
35
CURA
102-G
100
100
70
CURA
103-G
200
200
140
CURA
104-G
400
400
280
CURA
105-G
600
600
420
CURA
106-G
800
800
560
CURA
107-G
1000
1000
700
Units
V
V
V
I
FSM
30
A
I
O
voltage at
V
F
T
rr
C
C
I
R
R
θJL
T
J
T
STG
1.0
50
1.0
1.3
1.7
75
5.0
100
42
150
-55 to +150
O
A
V
nS
μA
C/W
O
O
C
C
O
Notes: 1. Thermal resistance from junction to lead.
REV:A
QW-BU001
Page 1
Comchip Technology CO., LTD.
SMD Ultra Fast Recovery Rectifiers
RATING AND CHARACTERISTIC CURVES (CURA101-G thru CURA107-G)
Fig.1 Reverse Characteristics
1000
100
Fig.2 Forward Characteristics
1 -G
Rever s e C urr e n t (μA )
F o r w a rd C u rren t
(A)
RA
10
10
4-
RA
CU
100
T
J
=125 C
G
O
10
~1
03
-G
CU
1
T
J
=25
O
C
0.1
T
J
=25
O
C
Pulse width 300μS
4% duty cycle
0.1
0
20
40
60
80
100
120
140
0.01
0.4
0.8
1.2
1.6
2.0
2.4
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (V)
Fig.3 Junction Capacitance
140
Fig.4 Non-repetitive Forward Surge Current
30
CU
RA
10
10
1
5-
G~
1
07
-G
120
Peak F or ward Surge C ur re nt A )
(
T
J
=25 C
f=1MHz and applied
4VDC reverse voltage
O
T
J
=25 C
8.3ms single half sine
wave, JEDEC method
O
J u n c ti o n C apacian ce(p F )
t
24
100
80
60
40
20
0
0.01
18
12
6
0
0.1
1
10
100
1
10
100
Reverse Voltage (V)
Number of Cycles at 60Hz
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
1.4
50Ω
NONINDUCTIVE
10Ω
NONINDUCTIVE
trr
1.2
1.0
0.8
0.6
0.4
0.2
0
1cm
Set time base for
50 / 10nS / cm
Fig.6 Current Derating Curve
+0.5A
(+)
25Vdc
(approx.)
(-)
(-)
D.U.T.
PULSE
GENERATOR
(NOTE 2)
(+)
OSCILLLISCOPE
(NOTE 1)
0
-0.25A
Average Forward Current (A)
1Ω
NON-
INDUCTIVE
Single phase
Half wave 60Hz
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
0
25
50
75
100
125
150
O
175
Ambient Temperature (
C)
REV:A
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Comchip Technology CO., LTD.
