CXG1082EN
Receive Dual Low Noise Amplifier/Mixer
Description
The CXG1082EN is a receive dual low noise amplifier/
mixer MMIC. This IC is designed using the Sony’s
GaAs J-FET process.
Features
•
High conversion gain: Gp = 17dB (LNA Typ.)
•
Low noise figure:
Gc = 11 to 12dB (MIX Typ.)
NF = 1.5dB (LNA Typ.)
NF = 4.2dB (MIX Typ.)
16 pin VSON (Plastic)
•
Single 3V power supply operation
•
Low LO input power operation P
LO
= –15dBm
•
Single CTL pin achieved by the built-in inverter
circuit
•
16-pin VSON package
Applications
800MHz Japan digital cellular telephones (PDC)
Structure
GaAs J-FET MMIC
Absolute Maximum Ratings
(Ta = 25°C)
•
Supply voltage
V
DD
4.5
•
Input power
P
IN
•
Current consumption I
DD
•
Operating temperature Topr
•
Storage temperature
Tstg
V
+13
dBm
15
mA
–35 to +85
°C
–65 to +150
°C
Recommended Operating Voltages
•
Supply voltage
V
DD
2.7 to 3.3
•
Control voltage
V
CTL
(H) 2.4 to 3.3
V
CTL
(L) 0 to 0.3
V
V
V
Block Diagram
Pin Configuration
LNA RF
IN
1
9
8
LNA RF
IN
2
LNA RF
IN
1
9
8
7
6
5
4
3
2
1
LNA RF
IN
2
CAP
LNA RF
OUT
/V
DD
1 (LNA)
GND
OPT
MIX RF
IN
GND
LO IN
CAP
10
6
LNA RF
OUT
GND
11
CTL
12
GND
13
3
MIX RF
IN
GND
14
V
DD
2 (LO AMP)
15
IF
OUT
16
1
LO IN
IF
OUT
/V
DD
3 (MIX)
16
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E00408-PS
CXG1082EN
Electrical Characteristics
Conditions: V
DD
= 3.0V, V
CTL
(H) = 3.0V, V
CTL
(L) = 0V, f
RF
1 = 870MHz, f
RF
2 = 820MHz, f
LO
= f
RF
– 130MHz,
P
LO
= –15dBm, Ta = 25°C, unless otherwise specified
Low Noise Amplifier Block
Item
Current
consumption
Control current
Symbol
I
DD
Path
—
RF frequency V
CTL
—
—
—
—
f
RF
1
H
L
H
L
H
L
H
L
H
L
H
L
H
L
Min.
—
—
—
–1
15
—
—
15
—
—
–13
–13
17
18
Typ.
1.9
1.9
55
0
17
–20
–25
17
1.5
1.5
–9
–9
22
23
Max.
2.5
2.5
80
—
19
–15
–20
19
2.0
2.0
—
—
—
—
dB
∗
1
When a
small signal
dB
When a
small signal
Unit
mA
When no
signal
µA
Measurement
condition
I
CTL
—
RF
IN
1
→
RF
OUT
Power gain
Gp
RF
IN
2
→
RF
OUT
RF
IN
1
→
RF
OUT
RF
IN
2
→
RF
OUT
RF
IN
1
→
RF
OUT
RF
IN
2
→
RF
OUT
RF
OUT
→
RF
IN
1
RF
OUT
→
RF
IN
2
f
RF
2
f
RF
1
f
RF
2
f
RF
1
f
RF
2
f
RF
1
f
RF
2
Noise figure
NF
Input IP3
IIP3
dBm
Isolation
Iso
dBm
Mixer Block
Item
Current consumption
Power gain
Symbol
I
DD
Gc
RF frequency
—
f
RF
1
f
RF
2
f
RF
1
f
RF
2
f
RF
1
f
RF
2
f
RF
1
f
RF
2
Min.
—
10
9
—
—
–4.0
–3.5
—
—
Typ.
4.5
12
11
4.2
4.2
–1.0
–0.5
–31
–31
Max.
6.0
14
13
6.0
6.0
—
—
–26
–26
Unit
mA
dB
When a small signal
dB
∗
1
f
LO
= 740MHz
f
LO
= 690MHz
Measurement condition
When no signal
Noise figure
NF
Input IP3
IIP3
dBm
LO to RF leak level
Plk
dBm
The values shown above are the specified values on the Sony’s recommended evaluation board. (When no
option pin resistor is added.)
∗
1
Conversion from the IM3 suppression ratio for two-wave input: PRF = –30dBm (low noise amplifier block)/
–25dBm (mixer block) at fRFoffset = 100kHz.
–2–
CXG1082EN
Recommended Evaluation Circuit
LNA RF
IN
1
50Ω
L5
L6
L4
9
C6
10
11
7
C9
6
5
8
L13
L14
L15
LNA RF
IN
2
50Ω
LNA RF
OUT
50Ω
L11
C8
L12
CTL
12
13
L3
4
R1
3
L8
2
1
L7
L10
C7
L9
V
DD
1 (LNA)
MIX RF
IN
50Ω
LO
IN
50Ω
V
DD
2 (LO AMP)
C5
IF
OUT
50Ω
V
DD
3 (MIX)
C3
C4
14
15
C2
L2
L1
C1
16
L1
L2
L3
L4
L5
L6
L7
L8
L9
L10
150nH
120nH
33nH
18nH
6.8nH
27nH
33nH
27nH
5.6nH
12nH
L11
L12
L13
L14
L15
C1
C2
C3
C4
C5
18nH
10nH
22nH
5.6nH
22nH
6pF
1000pF
1000pF
100pF
1000pF
C6
C7
C8
C9
R1
18pF
1000pF
100pF
56pF
–3–
CXG1082EN
Example of Representative Characteristics
(Ta = 25°C)
Low Noise Amplifier Block
Path RF
IN
1
→
RF
OUT
Gp, NF vs. f
RF
18
17.5
17
Gp – Power gain [dB]
16.5
16
15.5
15
NF
14.5
14
800
1
900
14.5
14
800
1.5
2
V
DD
= 3V
V
CTL
= 3V
Gp
3
18
17.5
2.5
17
Gp – Power gain [dB]
Path RF
IN
2
→
RF
OUT
Gp, NF vs. f
RF
3
V
DD
= 3V
V
CTL
= 0V
2.5
Gp
16.5
16
15.5
15
NF
1
900
1.5
2
NF – Noise figure [dB]
820
840
860
880
820
840
860
880
f
RF
– RF frequency [MHz]
f
RF
– RF frequency [MHz]
Path RF
IN
1
→
RF
OUT
P
OUT
, IM3 vs. P
IN
20
10
0
P
OUT
– RF output power [dBm]
–10
–20
–30
–40
–50
IM3
–60
–70
–80
–90
–40
–30
–20
–10
0
10
V
DD
= 3V
V
CTL
= 3V
f
RF
1 = 870MHz
f
RF
2 = 870.1MHz
P
OUT
P
OUT
– RF output power [dBm]
20
10
0
–10
–20
–30
–40
–50
Path RF
IN
2
→
RF
OUT
P
OUT
, IM3 vs. P
IN
P
OUT
IM3
–60
–70
–80
–90
–40
–30
–20
–10
0
10
V
DD
= 3V
V
CTL
= 0V
f
RF
1 = 820MHz
f
RF
2 = 820.1MHz
P
IN
– RF input power[dBm]
P
IN
– RF input power[dBm]
–4–
NF – Noise figure [dB]
CXG1082EN
Mixer Block
Gc, NF vs. f
RF
15
14
Gc – Conversion gain [dB]
13
12
11
10
NF
9
8
7
6
5
800
820
840
860
880
4
3.5
3
2.5
2
900
Gc
V
DD
= 3V
f
LO
= f
RF
– 130MHz
P
LO
= –15dBm
7
6.5
6
5.5
5
4.5
NF – Noise figure [dB]
f
RF
– RF frequency [MHz]
Gc, NF vs. P
LO
15
14
Gc – Conversion gain [dB]
13
12
11
10
9
8
7
6
5
–25
–20
–15
–10
–5
0
NF
V
DD
= 3V
f
RF
1 = 870MHz
f
RF
2 = 870.1MHz
f
LO
= 740MHz
Gc
5.5
5.3
Gc – Conversion gain [dB]
5.1
NF – Noise figure [dB]
4.9
4.7
4.5
4.3
4.1
3.9
3.7
3.5
P
LO
– LO input power [dBm]
15
14
13
12
11
10
9
8
Gc, NF vs. P
LO
5.5
V
DD
= 3V
f
RF
1 = 820MHz
f
RF
2 = 820.1MHz
f
LO
= 690MHz
Gc
5.3
5.1
4.9
4.7
4.5
4.3
4.1
NF
7
6
5
–25
–20
–15
–10
–5
0
3.9
3.7
3.5
P
LO
– LO input power [dBm]
NF – Noise figure [dB]
–5–
模拟电子
