CY62158EV30 MoBL
®
8-Mbit (1024 K × 8) Static RAM
8-Mbit (1024 K × 8) Static RAM
Features
■
Functional Description
The CY62158EV30 is a high performance CMOS static RAM
organized as 1024K words by 8 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL
) in portable
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption. Placing the device into standby mode reduces
power consumption significantly when deselected (CE
1
HIGH or
CE
2
LOW). The eight input and output pins (I/O
0
through I/O
7
)
are placed in a high impedance state when the device is
deselected (CE
1
HIGH or CE
2
LOW), the outputs are disabled
(OE HIGH), or a write operation is in progress (CE
1
LOW and
CE
2
HIGH and WE LOW).
To write to the device, take Chip Enables (CE
1
LOW and CE
2
HIGH) and Write Enable (WE) input LOW. Data on the eight I/O
pins (I/O
0
through I/O
7
) is then written into the location specified
on the address pins (A
0
through A
19
).
To read from the device, take Chip Enables (CE
1
LOW and CE
2
HIGH) and OE LOW while forcing the WE HIGH. Under these
conditions, the contents of the memory location specified by the
address pins appear on the I/O pins. See
Truth Table on page
11
for a complete description of read and write modes.
For a complete list of related documentation,
click here.
Very high speed: 45 ns
❐
Wide voltage range: 2.20 V–3.60 V
Pin compatible with CY62158DV30
Ultra low standby power
❐
Typical standby current: 2
A
❐
Maximum standby current: 8
A
Ultra low active power
❐
Typical active current: 1.8 mA at f = 1 MHz
Easy memory expansion with CE
1
, CE
2
, and OE features
Automatic power down when deselected
CMOS for optimum speed/power
Offered in Pb-free 48-ball VFBGA and 44-pin TSOP II
packages
■
■
■
■
■
■
■
Logic Block Diagram
CE1
CE2
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
WE
OE
DATA IN DRIVERS
ROW DECODER
I/O
IO0
0
I/O
IO1
1
SENSE AMPS
I/O
IO2
2
I/O
IO3
3
I/O
IO4
4
I/O
IO5
5
I/O
IO6
6
I/O
IO7
7
1024K x 8
ARRAY
COLUMN DECODER
POWER
DOWN
A15
A16
A17
A13
A14
A18
A19
Cypress Semiconductor Corporation
Document Number: 38-05578 Rev. *J
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised November 28, 2014
CY62158EV30 MoBL
®
Contents
Pin Configurations ...........................................................3
Product Portfolio ..............................................................3
Maximum Ratings .............................................................4
Operating Range ...............................................................4
Electrical Characteristics .................................................4
Capacitance ......................................................................5
Thermal Resistance ..........................................................5
AC Test Loads and Waveforms .......................................5
Data Retention Characteristics .......................................6
Data Retention Waveform ................................................6
Switching Characteristics ................................................7
Switching Waveforms ......................................................8
Truth Table ......................................................................11
Ordering Information ......................................................12
Ordering Code Definitions .........................................12
Package Diagrams ..........................................................13
Acronyms ........................................................................15
Document Conventions .................................................15
Units of Measure .......................................................15
Document History Page .................................................16
Sales, Solutions, and Legal Information ......................18
Worldwide Sales and Design Support .......................18
Products ....................................................................18
PSoC® Solutions .......................................................18
Cypress Developer Community .................................18
Technical Support ......................................................18
Document Number: 38-05578 Rev. *J
Page 2 of 18
CY62158EV30 MoBL
®
Pin Configurations
Figure 1. 48-ball VFBGA pinout (Top View)
[1]
1
NC
NC
I/O
0
V
SS
V
CC
I/O
3
NC
A
18
2
OE
NC
NC
I/O
1
I/O
2
NC
NC
A
8
3
A
0
A
3
A
5
A
17
NC
A
14
A
12
A
9
4
A
1
A
4
A
6
A
7
A
16
A
15
A
13
A
10
5
A
2
CE
1
NC
I/O
5
I/O
6
NC
WE
A
11
6
CE
2
NC
I/O
4
V
CC
V
SS
I/O
7
NC
A
19
A
B
C
D
E
F
G
H
A
4
A
3
A
2
A
1
A
0
CE
1
NC
NC
I/O
0
I/O
1
V
CC
V
SS
I/O
2
I/O
3
NC
NC
WE
A
19
A
18
A
17
A
16
A
15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
Figure 2. 44-pin TSOP
p
II pinout (Top View)
[1]
A
5
A
6
A
7
OE
CE
2
A8
NC
NC
I/O
7
I/O
6
V
SS
V
CC
I/O
5
I/O
4
NC
NC
A
9
A
10
A
11
A
12
A
13
A
14
Product Portfolio
Power Dissipation
Product
Min
CY62158EV30LL
2.2
V
CC
Range (V)
Typ
[2]
3.0
Max
3.6
45
Speed
(ns)
Operating I
CC
(mA)
f = 1 MHz
Typ
[2]
1.8
Max
3
18
f = f
max
Typ
[2]
Max
25
Standby, I
SB2
(μA)
Typ
[2]
2
Max
8
Notes
1. NC pins are not connected on the die.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
Document Number: 38-05578 Rev. *J
Page 3 of 18
CY62158EV30 MoBL
®
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature ............................... –65 °C to +150 °C
Ambient Temperature with
Power Applied .......................................... –55 °C to +125 °C
Supply Voltage to
Ground Potential ..........................–0.3 V to V
CC(max)
+ 0.3 V
DC Voltage Applied to Outputs
in High Z State
[3, 4]
.................... –0.3 V to V
CC(max)
+ 0.3 V
DC Input Voltage
[3, 4]
................. –0.3 V to V
CC(max)
+ 0.3 V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage
(MIL-STD-883, Method 3015) .................................> 2001 V
Latch up Current ....................................................> 200 mA
Operating Range
Product
CY62158EV30LL
Range
Industrial
Ambient
Temperature
(T
A
)
V
CC
[5]
–40 °C to +85 °C 2.2 V–3.6 V
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
V
IIL
I
IX
I
OZ
I
CC
Description
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current
V
CC
operating supply current
Test Conditions
I
OH
= –0.1 mA
I
OH
= –1.0 mA, V
CC
> 2.70 V
I
OL
= 0.1 mA
I
OL
= 2.1 mA, V
CC
> 2.70 V
V
CC
= 2.2 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 2.2 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
GND < V
I
< V
CC
GND < V
O
< V
CC
, Output Disabled
f = f
max
= 1/t
RC
f = 1 MHz
I
SB1
Automatic CE power down
current — CMOS Inputs
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
45 ns
Min
2.0
2.4
–
–
1.8
2.2
–0.3
–0.3
–1
–1
–
–
–
Typ
[6]
–
–
–
–
–
–
–
–
–
–
18
1.8
2
Max
–
–
0.4
0.4
V
CC
+ 0.3 V
V
CC
+ 0.3 V
0.6
0.8
+1
+1
25
3
8
Unit
V
V
V
V
V
V
V
V
A
A
mA
mA
A
CE
1
> V
CC
– 0.2 V, CE
2
< 0.2 V,
V
IN
> V
CC
– 0.2 V, V
IN
< 0.2 V,
f = f
max
(Address and Data Only),
f = 0 (OE and WE), V
CC
= 3.60 V
CE
1
> V
CC
– 0.2 V or CE
2
< 0.2 V,
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
f = 0, V
CC
= 3.60 V
I
SB2[7]
Automatic CE Power down
Current — CMOS inputs
–
2
8
A
Notes
3. V
IL(min)
= –2.0 V for pulse durations less than 20 ns.
4. V
IH(max)
= V
CC
+ 0.75 V for pulse duration less than 20 ns.
5. Full device AC operation assumes a 100
s
ramp time from 0 to V
CC
(min) and 200
s
wait time after V
CC
stabilization.
6. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
7. Chip enables (CE
1
and CE
2
) must be at CMOS level to meet the I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
Document Number: 38-05578 Rev. *J
Page 4 of 18
CY62158EV30 MoBL
®
Capacitance
Parameter
[8]
C
IN
C
OUT
Description
Input capacitance
Output capacitance
Test Conditions
T
A
= 25 °C, f = 1 MHz, V
CC
= V
CC(typ)
Max
10
10
Unit
pF
pF
Thermal Resistance
Parameter
[8]
JA
JC
Description
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
48-ball BGA 44-pin TSOP II Unit
72
8.86
76.88
13.52
C/W
C/W
AC Test Loads and Waveforms
Figure 3. AC Test Loads and Waveforms
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
R2
V
CC
GND
10%
ALL INPUT PULSES
90%
90%
10%
Rise Time: 1 V/ns
Equivalent to:
THÉVENIN EQUIVALENT
R
TH
V
TH
Fall time: 1 V/ns
OUTPUT
Parameters
R1
R2
R
TH
V
TH
2.5 V
16667
15385
8000
1.20
3.0 V
1103
1554
645
1.75
Unit
V
Note
8. Tested initially and after any design or process changes that may affect these parameters.
Document Number: 38-05578 Rev. *J
Page 5 of 18
