Power Dissipation .......................................................... 1.0W
Static Discharge Voltage ........................................... >2001V
(per MIL-STD-883, Method 3015)
Operating Range
Ambient
Temperature
−40°C
to +85°C
V
CC
5V
±
10%
Notes:
1. H = HIGH Voltage Level.
L = LOW Voltage Level.
X = Don’t Care.
Z = HIGH Impedance.
=LOW-to-HIGH transition.
2. Output level before indicated steady-state input conditions were established.
3. Operation beyond the limits set forth may impair the useful life of the device. Unless otherwise noted, these limits are over the operating free-air temperature range.
4. Unused inputs must always be connected to an appropriate logic voltage level, preferably either V
CC
or ground.
2
CY74FCT16823T
CY74FCT162823T
Electrical Characteristics
Over the Operating Range
Parameter
V
IH
V
IL
V
H
V
IK
I
IH
I
IL
I
OZH
I
OZL
I
OS
I
O
I
OFF
Description
Input HIGH Voltage
Input LOW Voltage
Input Hysteresis
[6]
Test Conditions
Min.
2.0
Typ.
[5]
Max.
0.8
Unit
V
V
mV
V
µA
µA
µA
µA
mA
mA
µA
100
V
CC
=Min., I
IN
=−18 mA
V
CC
=Max., V
I
=V
CC
V
CC
=Max., V
I
=GND
V
CC
=Max., V
OUT
=2.7V
V
CC
=Max., V
OUT
=0.5V
V
CC
=Max., V
OUT
=GND
V
CC
=Max., V
OUT
=2.5V
V
CC
=0V, V
OUT
≤4.5V
[8]
−80
−50
−140
−0.7
−1.2
±1
±1
±1
±1
−200
−180
1
Input Clamp Diode Voltage
Input HIGH Current
Input LOW Current
High Impedance Output Current
(Three-State Output pins)
High Impedance Output Current
(Three-State Output pins)
Short Circuit Current
[7]
Output Drive Current
[7]
Power-Off Disable
Output Drive Characteristics for CY74FCT16823T
Parameter
V
OH
Description
Output HIGH Voltage
Test Conditions
V
CC
=Min., I
OH
=−3 mA
V
CC
=Min., I
OH
=−15 mA
V
CC
=Min., I
OH
=−32 mA
V
OL
Output LOW Voltage
V
CC
=Min., I
OL
=64 mA
Min.
2.5
2.4
2.0
Typ.
[5]
3.5
3.5
3.0
0.2
0.55
V
Max.
Unit
V
Output Drive Characteristics for CY74FCT162823T
Parameter
I
ODL
I
ODH
V
OH
V
OL
Description
Output LOW Voltage
[7]
Test Conditions
V
CC
=5V, V
IN
=V
IH
or V
IL
, V
OUT
=1.5V
V
CC
=5V, V
IN
=V
IH
or V
IL
, V
OUT
=1.5V
V
CC
=Min., I
OH
=−24 mA
V
CC
=Min., I
OL
=24 mA
Min.
60
−60
2.4
Typ.
[5]
115
−115
3.3
0.3
Max.
150
−150
0.55
Unit
mA
mA
V
V
Output HIGH Voltage
[7]
Output HIGH Voltage
Output LOW Voltage
Capacitance
[9]
(T
A
= +25°C, f = 1.0 MHz)
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
V
IN
= 0V
V
OUT
= 0V
Test Conditions
Typ.
[5]
4.5
5.5
Max.
6.0
8.0
Unit
pF
pF
Notes:
5. Typical values are at V
CC
= 5.0V, T
A
= +25°C ambient.
6. This input is guaranteed but not tested.
7. Not more than one output should be shorted at a time. Duration of short should not exceed one second. The use of high-speed test apparatus and/or sample
and hold techniques are preferable in order to minimize internal chip heating and more accurately reflect operational values. Otherwise prolonged shorting of
a high output may raise the chip temperature well above normal and thereby cause invalid readings in other parametric tests. In any sequence of parameter
tests, I
OS
tests should be performed last.
8. Tested at +25°C.
9. This parameter is guaranteed but not tested.
3
CY74FCT16823T
CY74FCT162823T
Power Supply Characteristics
Parameter
I
CC
∆I
CC
I
CCD
Description
Quiescent Power Supply
Current
Quiescent Power Supply
Current (TTL inputs HIGH)
Dynamic Power Supply
Current
[12]
V
CC
=Max.
V
CC
=Max.
V
CC
=Max.,
One Input Toggling,
50% Duty Cycle,
Outputs Open,
OE=CLKEN=GND
V
CC
=Max.,
f
0
=10 MHz,
50% Duty Cycle,
Outputs Open,
One Bit Toggling,
OE=CLKEN=GND
at f
1
=5 MHz
V
CC
=Max.,
at f
1
=2.5 MHz,
50% Duty Cycle,
Outputs Open,
Eighteen Bits Toggling,
OE=CLKEN=GND
f
0
=10 MHz
Test Conditions
[10]
V
IN
<0.2V
V
IN
>V
CC
−0.2V
V
IN
=3.4V
[11]
V
IN
=V
CC
or
V
IN
=GND
Min.
—
—
—
Typ.
[5]
5
0.5
75
Max.
500
1.5
120
Unit
µA
mA
µA/
MHz
I
C
Total Power Supply Current
[13]
V
IN
=V
CC
or
V
IN
=GND
V
IN
=3.4V or
V
IN
=GND
—
—
0.8
1.3
1.7
3.2
mA
V
IN
=V
CC
or
V
IN
=GND
V
IN
=3.4V or
V
IN
=GND
—
—
4.2
9.2
7.1
[14]
22.1
[14]
Notes:
10. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
11. Per TTL driven input (V
IN
=3.4V); all other inputs at V
CC
or GND.
12. This parameter is not directly testable, but is derived for use in Total Power Supply calculations.
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
13. I
C
I
C
= I
CC
+∆I
CC
D
H
N
T
+I
CCD
(f
0
/2 + f
1
N
1
)
I
CC
= Quiescent Current with CMOS input levels
∆I
CC
= Power Supply Current for a TTL HIGH input (V
IN
=3.4V)
D
H
= Duty Cycle for TTL inputs HIGH
N
T
= Number of TTL inputs at D
H
I
CCD
= Dynamic Current caused by an input transition pair (HLH or LHL)
f
0
= Clock frequency for registered devices, otherwise zero
f
1
= Input signal frequency
N
1
= Number of inputs changing at f
1
All currents are in milliamps and all frequencies are in megahertz.
14. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
