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CY7C09159AV-7AC

Dual-Port SRAM, 8KX9, 7.5ns, CMOS, PQFP100, PLASTIC, TQFP-100

器件类别:存储    存储   

厂商名称:Cypress(赛普拉斯)

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Cypress(赛普拉斯)
零件包装代码
QFP
包装说明
PLASTIC, TQFP-100
针数
100
Reach Compliance Code
compliant
ECCN代码
EAR99
最长访问时间
7.5 ns
最大时钟频率 (fCLK)
83 MHz
I/O 类型
COMMON
JESD-30 代码
S-PQFP-G100
JESD-609代码
e0
长度
14 mm
内存密度
73728 bit
内存集成电路类型
DUAL-PORT SRAM
内存宽度
9
功能数量
1
端口数量
2
端子数量
100
字数
8192 words
字数代码
8000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
8KX9
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
LFQFP
封装等效代码
QFP100,.63SQ,20
封装形状
SQUARE
封装形式
FLATPACK, LOW PROFILE, FINE PITCH
并行/串行
PARALLEL
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
3.3 V
认证状态
Not Qualified
座面最大高度
1.6 mm
最大待机电流
0.0005 A
最小待机电流
3 V
最大压摆率
0.275 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
0.5 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
14 mm
文档预览
1
PRELIMINARY
CY7C09159AV
CY7C09169AV
3.3V 8K/16K x 9
Synchronous Dual Port Static RAM
Features
• True Dual-Ported memory cells which allow simulta-
neous access of the same memory location
• Two Flow-Through/Pipelined devices
— 8K x 9 organization (CY7C09159AV)
— 16K x 9 organization (CY7C09169AV)
• Three Modes
— Flow-Through
— Pipelined
— Burst
• Pipelined output mode on both ports allows fast 83-MHz
operation
• 0.35-micron CMOS for optimum speed/power
v
• High-speed clock to data access 7.5
[1]
/9/12 ns (max.)
• 3.3V Low operating power
— Active = 135 mA (typical)
— Standby = 10
µA
(typical)
• Fully synchronous interface for easier operation
• Burst counters increment addresses internally
— Shorten cycle times
— Minimize bus noise
— Supported in Flow-Through and Pipelined modes
Dual Chip Enables for easy depth expansion
Automatic power-down
Commercial and industrial temperature ranges
Available in 100-pin TQFP
Logic Block Diagram
R/W
L
OE
L
R/W
R
OE
R
CE
0L
CE
1L
1
0/1
1
0/1
0
0
CE
0R
CE
1R
FT/Pipe
L
I/O
0L
−I/O
8L
0/1
1
0
0
1
0/1
FT/Pipe
R
I/O
0R
−I/O
8R
9
9
I/O
Control
[2]
I/O
Control
13/14
[2]
A
0
−A
12/13L
CLK
L
ADS
L
CNTEN
L
CNTRST
L
13/14
Counter/
Address
Register
Decode
True Dual-Ported
RAM Array
Counter/
Address
Register
Decode
A
0
−A
12/13R
CLK
R
ADS
R
CNTEN
R
CNTRST
R
Notes:
1. See page 6 for Load Conditions.
2. A
0
−A
12
for 8K; A
0
−A
13
for 16K.
For the most recent information, visit the Cypress web site at www.cypress.com
Cypress Semiconductor Corporation
3901 North First Street
San Jose
CA 95134
408-943-2600
November 29, 1999
PRELIMINARY
Functional Description
The CY7C09159AV and CY7C09169AV are high-speed syn-
chronous CMOS 8K and 16K x 9 dual-port static RAMs. Two
ports are provided, permitting independent, simultaneous ac-
cess for reads and writes to any location in memory.
[3]
Regis-
ters on control, address, and data lines allow for minimal set-
up and hold times. In pipelined output mode, data is registered
for decreased cycle time. Clock to data valid t
CD2
= 7.5 ns
[1]
(pipelined). Flow-through mode can also be used to bypass
the pipelined output register to eliminate access latency. In
flow-through mode data will be available t
CD1
= 18 ns after the
address is clocked into the device. Pipelined output or flow-
through mode is selected via the FT/Pipe pin.
Each port contains a burst counter on the input address regis-
ter. The internal write pulse width is independent of the LOW-
to-HIGH transition of the clock signal. The internal write pulse
is self-timed to allow the shortest possible cycle times.
CY7C09159AV
CY7C09169AV
A HIGH on CE
0
or LOW on CE
1
for one clock cycle will power
down the internal circuitry to reduce the static power consump-
tion. The use of multiple Chip Enables allows easier banking
of multiple chips for depth expansion configurations. In the
pipelined mode, one cycle is required with CE
0
LOW and CE
1
HIGH to reactivate the outputs.
Counter enable inputs are provided to stall the operation of the
address input and utilize the internal address generated by the
internal counter for fast interleaved memory applications. A
port’s burst counter is loaded with the port’s Address Strobe
(ADS). When the port’s Count Enable (CNTEN) is asserted,
the address counter will increment on each LOW-to-HIGH
transition of that port’s clock signal. This will read/write one
word from/into each successive address location until CNTEN
is deasserted. The counter can address the entire memory
array and will loop back to the start. Counter Reset (CNTRST)
is used to reset the burst counter.
All parts are available in 100-pin Thin Quad Plastic Flatpack
(TQFP) packages.
Note:
3. When simultaneously writing to the same location, final value cannot be guaranteed.
2
PRELIMINARY
Pin Configuration
100-Pin TQFP
(Top View)
CNTENR
CNTENL
ADSR
CLKR
ADSL
CLKL
CY7C09159AV
CY7C09169AV
GND
GND
A0R
A1R
A2R
A3R
A4R
A5R
A6R
A6L
A5L
A4L
A3L
A2L
A1L
A0L
NC
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76
NC
NC
A7L
A8L
A9L
A10L
A11L
A12L
[4]
A13L
NC
75
74
73
72
71
70
69
68
67
66
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
NC
NC
A7R
A8R
A9R
A10R
A11R
A12R
A13R
NC
NC
NC
GND
NC
NC
NC
NC
CE0R
CE1R
CNTRSTR
R/WR
OER
FT/PIPER
GND
NC
[4]
NC
NC
NC
VCC
NC
NC
NC
NC
CE0L
CE1L
CNTRSTL
R/WL
OEL
FT/PIPEL
NC
NC
CY7C09169AV (16K x 9)
CY7C09159AV (8K x 9)
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
I/O0R
I/01R
I/O2R
I/O3R
I/O4R
I/O5R
I/O6R
I/O7R
I/O8R
GND
GND
VCC
GND
VCC
NC
I/O8L
I/O7L
I/O6L
I/O5L
I/O4L
I/O3L
I/O2L
I/O1L
Note:
4. This pin is NC for CY7C09159AV.
Selection Guide
CY7C09159AV
CY7C09169AV
-7
[1]
f
MAX2
(MHz) (Pipelined)
Max Access Time (ns) (Clock to Data, Pipelined)
Typical Operating Current I
CC
(mA)
Typical Standby Current for I
SB1
(mA) (Both Ports TTL Level)
Typical Standby Current for I
SB3
(µA) (Both Ports CMOS Level)
83
7.5
155
25
10
µA
CY7C09159AV
CY7C09169AV
-9
67
9
135
20
10
µA
CY7C09159AV
CY7C09169AV
-12
50
12
115
20
10
µA
I/O0L
3
NC
PRELIMINARY
Pin Definitions
Left Port
A
0L
–A
13L
ADS
L
Right Port
A
0R
–A
13R
ADS
R
Description
Address Inputs (A
0
−A
12
for 8K; A
0
−A
13
for 16K devices).
CY7C09159AV
CY7C09169AV
Address Strobe Input. Used as an address qualifier. This signal should be asserted LOW during
normal read or write transactions. Asserting this signal LOW also loads the burst address counter
with data present on the I/O pins.
Chip Enable Input. To select either the left or right port, both CE
0
AND CE
1
must be asserted to
their active states (CE
0
V
IL
and CE
1
V
IH
).
Clock Signal. This input can be free-running or strobed. Maximum clock input rate is f
MAX.
Counter Enable Input. Asserting this signal LOW increments the burst address counter of its
respective port on each rising edge of CLK. CNTEN is disabled if ADS or CNTRST are asserted
LOW.
Counter Reset Input. Asserting this signal LOW resets the burst address counter of its respective
port to zero. CNTRST is not disabled by asserting ADS or CNTEN.
Data Bus Input/Output (I/O
0
–I/O
7
for x8 devices; I/O
0
–I/O
8
for x9 devices).
Output Enable Input. This signal must be asserted LOW to enable the I/O data pins during read
operations.
Read/Write Enable Input. This signal is asserted LOW to write to the dual-port memory array.
For read operations, assert this pin HIGH.
Flow-Through/Pipelined Select Input. For flow-through mode operation, assert this pin LOW. For
pipelined mode operation, assert this pin HIGH.
Ground Input.
No Connect.
Power Input.
Static Discharge Voltage ........................................... >2001V
Latch-Up Current ..................................................... >200 mA
CE
0L
,CE
1L
CLK
L
CNTEN
L
CE
0R
,CE
1R
CLK
R
CNTEN
R
CNTRST
L
I/O
0L
–I/O
8L
OE
L
R/W
L
FT/PIPE
L
GND
NC
V
CC
CNTRST
R
I/O
0R
–I/O
8R
OE
R
R/W
R
FT/PIPE
R
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65
°
C to +150
°
C
Ambient Temperature with Power Applied ..–55
°
C to +125
°
C
Supply Voltage to Ground Potential ............... –0.5V to +4.6V
DC Voltage Applied to
Outputs in High Z State ...........................–0.5V to V
CC
+0.5V
DC Input Voltage......................................–0.5V to V
CC
+0.5V
Output Current into Outputs (LOW) ............................. 20 mA
Note:
5. Industrial parts are available in CY7C09169AV only.
Operating Range
Range
Commercial
Industrial
[5]
Ambient
Temperature
0
°
C to +70
°
C
–40
°
C to +85
°
C
V
CC
3.3V
±
300 mV
3.3V
±
300 mV
Shaded areas contain advance information.
4
PRELIMINARY
Electrical Characteristics
Over the Operating Range
CY7C09159AV
CY7C09169AV
-7
[1]
Parameter
V
OH
V
OL
V
IH
V
IL
I
OZ
I
CC
I
SB1
I
SB2
I
SB3
I
SB4
Description
Output HIGH Voltage (V
CC
= Min., I
OH
= –4.0 mA)
Output LOW Voltage (V
CC
= Min., I
OH
= +4.0 mA)
Input HIGH Voltage
Input LOW Voltage
Output Leakage Current
Operating Current (V
CC
= Max.,
I
OUT
= 0 mA) Outputs Disabled
Standby Current (Both Ports TTL
Level)
[6]
CE
L
& CE
R
V
IH
, f = f
MAX
Com’l.
Ind.
[5]
Com’l.
Ind.
[5]
105
10
95
165
500
125
95
10
85
155
500
115
25
85
20
75
–10
155
2.0
0.8
10
275
–10
135
2.4
0.4
2.0
0.8
10
230
2.4
0.4
-9
CY7C09159AV
CY7C09169AV
-12
2.4
0.4
2.0
0.8
–10
115
155
20
30
85
95
10
10
75
85
10
180
250
70
80
140
150
500
500
100
110
V
V
V
V
µA
mA
mA
mA
mA
mA
mA
µA
µA
mA
mA
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit
Standby Current (One Port TTL Level)
[6]
Com’l.
CE
L
| CE
R
V
IH
, f = f
MAX
Ind.
[5]
Standby Current (Both Ports CMOS
Com’l.
Level)
[6]
CE
L
& CE
R
V
CC
– 0.2V, f = 0
Ind.
[5]
Standby Current (One Port CMOS
Level)
[6]
CE
L
| CE
R
V
IH
, f = f
MAX
Com’l.
Ind.
[5]
Shaded areas contain advance information.
Capacitance
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 3.3V
Max.
10
10
Unit
pF
pF
Note:
6. CE
L
and CE
R
are internal signals. To select either the left or right port, both CE
0
AND CE
1
must be asserted to their active states (CE
0
V
IL
and CE
1
V
IH
).
5
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参数对比
与CY7C09159AV-7AC相近的元器件有:CY7C09159AV-12AI、CY7C09169AV-7AC。描述及对比如下:
型号 CY7C09159AV-7AC CY7C09159AV-12AI CY7C09169AV-7AC
描述 Dual-Port SRAM, 8KX9, 7.5ns, CMOS, PQFP100, PLASTIC, TQFP-100 Dual-Port SRAM, 8KX9, 12ns, CMOS, PQFP100, PLASTIC, TQFP-100 Dual-Port SRAM, 16KX9, 7.5ns, CMOS, PQFP100, PLASTIC, TQFP-100
是否Rohs认证 不符合 不符合 不符合
厂商名称 Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯)
零件包装代码 QFP QFP QFP
包装说明 PLASTIC, TQFP-100 PLASTIC, TQFP-100 PLASTIC, TQFP-100
针数 100 100 100
Reach Compliance Code compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99
最长访问时间 7.5 ns 12 ns 7.5 ns
最大时钟频率 (fCLK) 83 MHz 50 MHz 83 MHz
I/O 类型 COMMON COMMON COMMON
JESD-30 代码 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100
JESD-609代码 e0 e0 e0
长度 14 mm 14 mm 14 mm
内存密度 73728 bit 73728 bit 147456 bit
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 9 9 9
功能数量 1 1 1
端口数量 2 2 2
端子数量 100 100 100
字数 8192 words 8192 words 16384 words
字数代码 8000 8000 16000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 85 °C 70 °C
组织 8KX9 8KX9 16KX9
输出特性 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LFQFP LFQFP LFQFP
封装等效代码 QFP100,.63SQ,20 QFP100,.63SQ,20 QFP100,.63SQ,20
封装形状 SQUARE SQUARE SQUARE
封装形式 FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH
并行/串行 PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified
座面最大高度 1.6 mm 1.6 mm 1.6 mm
最大待机电流 0.0005 A 0.0005 A 0.0005 A
最小待机电流 3 V 3 V 3 V
最大压摆率 0.275 mA 0.25 mA 0.275 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES
技术 CMOS CMOS CMOS
温度等级 COMMERCIAL INDUSTRIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING GULL WING GULL WING
端子节距 0.5 mm 0.5 mm 0.5 mm
端子位置 QUAD QUAD QUAD
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 14 mm 14 mm 14 mm
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