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CY7C1021CV33
1-Mbit (64K x 16) Static RAM
Features
• Temperature Ranges
— Commercial: 0°C to 70°C
— Industrial: –40°C to 85°C
— Automotive: –40°C to 125°C
• Pin- and function-compatible with CY7C1021BV33
• High speed
— t
AA
= 8 ns (Commercial & Industrial)
— t
AA
= 12 ns (Automotive)
• CMOS for optimum speed/power
• Low active power: 360 mW (max.)
• Automatic power-down when deselected
• Independent control of upper and lower bits
• Available in 44-pin TSOP II, 400-mil SOJ, 48-ball FBGA
• Also available in Lead-Free 44-pin TSOP II, 400-mil SOJ
packages
Functional Description
[1]
The CY7C1021CV33 is a high-performance CMOS static
RAM organized as 65,536 words by 16 bits. This device has
an automatic power-down feature that significantly reduces
power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
1
through I/O
8
), is
written into the location specified on the address pins (A
0
through A
15
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
9
through I/O
16
) is written into the location
specified on the address pins (A
0
through A
15
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
1
to I/O
8
. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O
9
to I/O
16
. See
the truth table at the end of this data sheet for a complete
description of Read and Write modes.
The input/output pins (I/O
1
through I/O
16
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a Write operation
(CE LOW, and WE LOW).
The CY7C1021CV33 is available in standard 44-pin TSOP
Type II, 400-mil-wide SOJ packages, as well as a 48-ball
FBGA.
Logic Block Diagram
DATA IN DRIVERS
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
ROW DECODER
64K x 16
RAM Array
512 X 2048
SENSE AMPS
I/O
1
–I/O
8
I/O
9
–I/O
16
COLUMN DECODER
BHE
WE
CE
OE
BLE
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05132 Rev. *E
•
A
8
A
9
A
10
A
11
A
12
A
13
A
14
A
15
3901 North First Street
•
San Jose
•
CA 95134 • 408-943-2600
Revised March 7, 2005
CY7C1021CV33
Selection Guide
CY7C1021CV33 CY7C1021CV33- CY7C1021CV33- CY7C1021CV33-
-8
10
12
15
Unit
Maximum Access Time
Maximum Operating Current
Automotive
Maximum CMOS Standby
Current
Automotive
8
95
-
5
-
10
90
-
5
-
12
85
90
5
10
15
80
-
5
-
ns
mA
mA
mA
mA
Pin Configurations
SOJ / TSOP II
Top View
A
4
A
3
A
2
A
1
A
0
CE
I/O
1
I/O
2
I/O
3
I/O
4
V
CC
V
SS
I/O
5
I/O
6
I/O
7
I/O
8
WE
A
15
A
14
A
13
A
12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
5
A
6
A
7
OE
BHE
BLE
I/O
16
I/O
15
I/O
14
I/O
13
V
SS
V
CC
I/O
12
I/O
11
I/O
10
I/O
9
NC
A
8
A
9
A
10
A
11
NC
48-ball FBGA
1
BLE
I/O
8
I/O
9
V
SS
V
CC
I/O
14
I/O
15
NC
2
OE
BHE
I/O
10
I/O
11
I/O
12
I/O
13
NC
A
8
(Top View)
4
3
A
0
A
3
A
5
NC
NC
A
14
A
12
A
9
A
1
A
4
A
6
A
7
NC
A
15
A
13
A
10
5
A
2
CE
I/O
2
I/O
3
I/O
4
I/O
5
WE
A
11
6
NC
I/O
0
I/O
1
V
CC
V
SS
I/O
6
I/O
7
NC
A
B
C
D
E
F
G
H
Document #: 38-05132 Rev. *E
Page 2 of 13
CY7C1021CV33
Pin Definitions
Pin Name
A
0
–A
15
SOJ, TSOP
Pin Number
BGA Pin
Number
I/O Type
Input
Description
Address Inputs used to select one of the address locations.
1–5, 18–21, A3, A4, A5,
24–27, 42–44 B3, B4, C3,
C4, D4, H2,
H3, H4, H5,
G3, G4, F3,
F4
7–10, 13–16, B6, C6,
29–32, 35–38 D5, E5,
F6, G6,
C1, C2,
E2, F2,
G1
22, 23, 28
I/O
0
–I/O
15[2]
C5, Input/Output
Bidirectional Data I/O lines.
Used as input or output lines
F5,
depending on operation.
B1,
D2,
F1,
NC
A6, D3, E3, No Connect
No Connects.
Not connected to the die.
E4, G2, H1,
H6
G5
B5
A1, B2
A2
Input/Control
Write Enable Input, active LOW.
When selected LOW, a Write is
conducted. When deselected HIGH, a Read is conducted.
Input/Control
Chip Enable Input, active LOW.
When LOW, selects the chip.
When HIGH, deselects the chip.
Input/Control
Byte Write Select Inputs, active LOW.
BLE controls I/O
8
–I/O
1
,
BHE controls I/O
16
–I/O
9
.
Input/Control
Output Enable, active LOW.
Controls the direction of the I/O pins.
When LOW, the I/O pins are allowed to behave as outputs. When
deasserted HIGH, I/O pins are three-stated, and act as input data
pins.
Ground
Ground for the device.
Should be connected to ground of the
system.
WE
CE
BHE, BLE
OE
17
6
39, 40
41
V
SS
V
CC
12,34
11,33
D1, E6
D6, E1
Power Supply
Power Supply inputs to the device.
Note:
2. I/O
1
–I/O
16
for SOJ/TSOP and I/O
0
–I/O
15
for BGA packages.
Document #: 38-05132 Rev. *E
Page 3 of 13
CY7C1021CV33
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
CC
to Relative GND
[3]
.... –0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State
[3]
......................................–0.5V to V
CC
+0.5V
DC Input Voltage
[3]
...................................–0.5V to V
CC
+0.5V
Current into Outputs (LOW) .........................................20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current...................................................... >200 mA
Operating Range
Range
Commercial
Industrial
Automotive
Ambient
Temperature (T
A
)
0°C to +70°C
–40°C to +85°C
–40°C to +125°C
V
CC
3.3V
±
10%
3.3V
±
10%
3.3V
±
10%
Electrical Characteristics
Over the Operating Range
1021CV33-8 1021CV33-10 1021CV33-12 1021CV33-15
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
Description
Test Conditions
Min.
2.4
0.4
2.0
–0.3
GND < V
I
<
V
CC
GND < V
I
<
V
CC
,
Output
Disabled
V
CC
= Max.,
V
OUT
= GND
V
CC
= Max., Com’l / Ind’l
I
OUT
= 0 mA, Automotive
f = f
MAX
=
1/t
RC
Max. V
CC
,
CE > V
IH
V
IN
> V
IH
or
V
IN
< V
IL
,
f = f
MAX
Com’l / Ind’l
Automotive
Com’l / Ind’l
Automotive
Com’l / Ind’l
Automotive
−1
-
+1
-
-300
−1
-
+1
-
−300
−1
V
CC
+ 0.3
0.8
+1
2.0
−0.3
−1
Max.
Min.
2.4
0.4
V
CC
+ 0.3
0.8
+1
2.0
–0.3
–1
–12
–1
–12
Max.
Min.
2.4
0.4
V
CC
+ 0.3
0.8
+1
+12
+1
+12
–300
–1
-
+1
-
–300
2.0
–0.3
–1
Max.
Min.
2.4
0.4
V
CC
+ 0.3
0.8
+1
Max.
Unit
V
V
V
V
µA
µA
µA
µA
mA
Output HIGH V
CC
= Min.,
Voltage
I
OH
= –4.0 mA
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage
[3]
Input Load
Current
Output
Leakage
Current
Output Short
Circuit
Current
[4]
V
CC
Operating
Supply
Current
Automatic CE
Power-Down
Current
—TTL Inputs
Automatic CE
Power-Down
Current
—CMOS
Inputs
V
CC
= Min.,
I
OL
= 8.0 mA
I
OS
I
CC
95
-
15
-
90
-
15
-
85
90
15
20
80
-
15
-
mA
mA
mA
mA
I
SB1
I
SB2
Max. V
CC
,
Com’l / Ind’l
CE > V
CC
– Automotive
0.3V, V
IN
>
V
CC
– 0.3V,
or V
IN
< 0.3V,
f=0
5
-
5
-
5
10
5
-
mA
mA
Notes:
3. V
IL
(min.) = –2.0V and V
IH
(max) = V
CC
+ 0.5V for pulse durations of less than 20 ns.
4. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
Document #: 38-05132 Rev. *E
Page 4 of 13
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