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CY7C1354BV25-200BZC

256KX36 ZBT SRAM, 3.2ns, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165

器件类别:存储    存储   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

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器件参数
参数名称
属性值
厂商名称
Rochester Electronics
零件包装代码
BGA
包装说明
TBGA,
针数
165
Reach Compliance Code
unknown
最长访问时间
3.2 ns
其他特性
PIPELINED ARCHITECTURE
JESD-30 代码
R-PBGA-B165
长度
15 mm
内存密度
9437184 bit
内存集成电路类型
ZBT SRAM
内存宽度
36
功能数量
1
端子数量
165
字数
262144 words
字数代码
256000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
256KX36
封装主体材料
PLASTIC/EPOXY
封装代码
TBGA
封装形状
RECTANGULAR
封装形式
GRID ARRAY, THIN PROFILE
并行/串行
PARALLEL
认证状态
COMMERCIAL
座面最大高度
1.2 mm
最大供电电压 (Vsup)
2.625 V
最小供电电压 (Vsup)
2.375 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
温度等级
COMMERCIAL
端子形式
BALL
端子节距
1 mm
端子位置
BOTTOM
宽度
13 mm
文档预览
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CY7C1354BV25
CY7C1356BV25
256K x 36/512K x 18 Pipelined SRAM with
NoBL™ Architecture
Features
• Pin-compatible and functionally equivalent to ZBT™
• Supports 225-MHz bus operations with zero wait states
— Available speed grades are 225, 200 and 166 MHz
• Internally self-timed output buffer control to eliminate
the need to use asynchronous OE
• Fully registered (inputs and outputs) for pipelined
operation
• Byte Write capability
• Single 2.5V power supply
• Fast clock-to-output times
— 2.8 ns (for 225-MHz device)
— 3.2ns (for 200-MHz device)
— 3.5 ns (for 166-MHz device)
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• Available in 100 TQFP, 119 BGA, and 165 fBGA packag-
es
• IEEE 1149.1 JTAG Boundary Scan
• Burst capability—linear or interleaved burst order
• “ZZ” Sleep Mode option and Stop Clock option
Functional Description
The CY7C1354BV25 and CY7C1356BV25 are 2.5V, 256K x
36 and 512K x 18 Synchronous pipelined burst SRAMs with
No Bus Latency™ (NoBL) logic, respectively. They are
designed to support unlimited true back-to-back Read/Write
operations with no wait states. The CY7C1354BV25 and
CY7C1356BV25 are equipped with the advanced (NoBL) logic
required to enable consecutive Read/Write operations with
data being transferred on every clock cycle. This feature
dramatically improves the throughput of data in systems that
require frequent Write/Read transitions. The CY7C1354BV25
and CY7C1356BV25 are pin compatible and functionally
equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which when deasserted suspends operation and extends the
previous clock cycle.
Write operations are controlled by the Byte Write Selects
(BW
a
–BW
d
for CY7C1354BV25 and BW
a
–BW
b
for
CY7C1356BV25) and a Write Enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
Logic Block Diagram-CY7C1354BV25 (256K x 36)
A0, A1, A
MODE
CLK
CEN
ADDRESS
REGISTER 0
A1
A1'
D1
Q1
A0
A0'
BURST
D0
Q0
LOGIC
ADV/LD
C
C
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
ADV/LD
BW
a
BW
b
BW
c
BW
d
WE
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
D
A
T
A
S
T
E
E
R
I
N
G
O
U
T
P
U
T
B
U
F
F
E
R
S
E
DQs
DQP
a
DQP
b
DQP
c
DQP
d
E
INPUT
REGISTER 1
E
INPUT
REGISTER 0
E
OE
CE1
CE2
CE3
ZZ
READ LOGIC
SLEEP
CONTROL
Cypress Semiconductor Corporation
Document #: 38-05292 Rev. *E
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised August 10, 2004
CY7C1354BV25
CY7C1356BV25
Logic Block Diagram-CY7C1356BV25 (512K x 18)
A0, A1, A
MODE
CLK
CEN
ADDRESS
REGISTER 0
A1
A1'
D1
Q1
A0
A0'
BURST
D0
Q0
LOGIC
ADV/LD
C
C
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
ADV/LD
BW
a
BW
b
WE
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
D
A
T
A
S
T
E
E
R
I
N
G
O
U
T
P
U
T
B
U
F
F
E
R
S
DQs
DQP
a
DQP
b
E
E
INPUT
REGISTER 1
E
INPUT
REGISTER 0
E
OE
CE1
CE2
CE3
ZZ
READ LOGIC
Sleep
Control
Selection Guide
CY7C1354BV25-225
CY7C1356BV25-225
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
2.8
250
35
CY7C1354BV25-200
CY7C1356BV25-200
3.2
220
35
CY7C1354BV25-166
CY7C1356BV25-166
3.5
180
35
Unit
ns
mA
mA
Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts.
Document #: 38-05292 Rev. *E
Page 2 of 27
CY7C1354BV25
CY7C1356BV25
Pin Configurations
100-pin TQFP Packages
A
A
CE
1
CE
2
BWd
BWc
BWb
BWa
CE
3
V
DD
V
SS
CLK
WE
CEN
OE
ADV/LD
E(18)
A
A
A
CE
1
CE
2
NC
NC
BWb
BWa
CE
3
V
DD
V
SS
CLK
WE
CEN
OE
ADV/LD
E(18)
A
NC
DQPb
NC
DQb
NC
DQb
V
DDQ
V
DDQ
V
SS
V
SS
NC
DQb
DQb
NC
DQb
DQb
DQb
DQb
V
SS
V
SS
V
DDQ
V
DDQ
DQb
DQb
DQb
DQb
NC
V
SS
V
DD
NC
NC
V
DD
V
SS
ZZ
DQb
DQa
DQa
DQb
V
DDQ
V
DDQ
V
SS
V
SS
DQa
DQb
DQa
DQb
DQa DQPb
NC
DQa
V
SS
V
SS
V
DDQ
V
DDQ
NC
DQa
DQa
NC
DQPa
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
A
A
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
DQPc
DQc
DQc
V
DDQ
V
SS
DQc
DQc
DQc
DQc
V
SS
V
DDQ
DQc
DQc
NC
V
DD
NC
V
SS
DQd
DQd
V
DDQ
V
SS
DQd
DQd
DQd
DQd
V
SS
V
DDQ
DQd
DQd
DQPd
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
A
A
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A
NC
NC
V
DDQ
V
SS
NC
DQPa
DQa
DQa
V
SS
V
DDQ
DQa
DQa
V
SS
NC
V
DD
ZZ
DQa
DQa
V
DDQ
V
SS
DQa
DQa
NC
NC
V
SS
V
DDQ
NC
NC
NC
CY7C1354BV25
(256K × 36)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
CY7C1356BV25
(512K × 18)
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
MODE
A
A
A
A
A
1
A
0
E(288)
E(144)
V
SS
V
DD
E(36)
A
A
A
A
A
A
A
MODE
A
A
A
A
A
1
A
0
E(72)
E(288)
E(144)
E(72)
V
SS
V
DD
Document #: 38-05292 Rev. *E
E(36)
A
A
A
A
A
A
A
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
Page 3 of 27
CY7C1354BV25
CY7C1356BV25
Pin Configurations
(continued)
119-ball BGA Pinout
CY7C1354BV25 (256K × 36) – 14 × 22 BGA
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
DDQ
NC
NC
DQ
c
DQ
c
V
DDQ
DQ
c
DQ
c
V
DDQ
DQ
d
DQ
d
V
DDQ
DQ
d
DQ
d
NC
NC
V
DDQ
2
A
CE
2
A
DQP
c
DQ
c
DQ
c
DQ
c
DQ
c
V
DD
DQ
d
DQ
d
DQ
d
DQ
d
DQP
d
A
E(72)
TMS
3
A
A
A
V
SS
V
SS
V
SS
BW
c
V
SS
NC
V
SS
BW
d
V
SS
V
SS
V
SS
MODE
A
TDI
4
E(18)
ADV/LD
V
DD
NC
CE
1
OE
A
WE
V
DD
CLK
NC
CEN
A1
A0
V
DD
A
TCK
5
A
A
A
V
SS
V
SS
V
SS
BW
b
V
SS
NC
V
SS
BW
a
V
SS
V
SS
V
SS
NC
A
TDO
6
A
CE
3
A
DQP
b
DQ
b
DQ
b
DQ
b
DQ
b
V
DD
DQ
a
DQ
a
DQ
a
DQ
a
DQP
a
A
E(36)
NC
7
V
DDQ
NC
NC
DQ
b
DQ
b
V
DDQ
DQ
b
DQ
b
V
DDQ
DQ
a
DQ
a
V
DDQ
DQ
a
DQ
a
NC
ZZ
V
DDQ
CY7C1356BV25 (512K x 18)–14 x 22 BGA
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
DDQ
NC
NC
DQ
b
NC
V
DDQ
NC
DQ
b
V
DDQ
NC
DQ
b
V
DDQ
DQ
b
NC
NC
E(72)
V
DDQ
2
A
CE
2
A
NC
DQ
b
NC
DQ
b
NC
V
DD
DQ
b
NC
DQ
b
NC
DQP
b
A
A
TMS
3
A
A
A
V
SS
V
SS
V
SS
BW
b
V
SS
NC
V
SS
V
SS
V
SS
V
SS
V
SS
MODE
A
TDI
4
E(18)
ADV/LD
V
DD
NC
CE
1
OE
A
WE
V
DD
CLK
NC
CEN
A1
A0
V
DD
E(36)
TCK
5
A
A
A
V
SS
V
SS
V
SS
V
SS
V
SS
NC
V
SS
BW
a
V
SS
V
SS
V
SS
NC
A
TDO
6
A
CE
3
A
DQP
a
NC
DQ
a
NC
DQ
a
V
DD
NC
DQ
a
NC
DQ
a
NC
A
A
NC
7
V
DDQ
NC
NC
NC
DQ
a
V
DDQ
DQ
a
NC
V
DDQ
DQ
a
NC
V
DDQ
NC
DQ
a
NC
ZZ
V
DDQ
Document #: 38-05292 Rev. *E
Page 4 of 27
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参数对比
与CY7C1354BV25-200BZC相近的元器件有:CY7C1354BV25-166BGC、CY7C1354BV25-200AC、CY7C1354BV25-166AC。描述及对比如下:
型号 CY7C1354BV25-200BZC CY7C1354BV25-166BGC CY7C1354BV25-200AC CY7C1354BV25-166AC
描述 256KX36 ZBT SRAM, 3.2ns, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165 256KX36 ZBT SRAM, 3.5ns, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119 ZBT SRAM, 256KX36, 3.2ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 ZBT SRAM, 256KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
厂商名称 Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics
零件包装代码 BGA BGA QFP QFP
包装说明 TBGA, BGA, LQFP, LQFP,
针数 165 119 100 100
Reach Compliance Code unknown unknown unknown unknown
最长访问时间 3.2 ns 3.5 ns 3.2 ns 3.5 ns
其他特性 PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
JESD-30 代码 R-PBGA-B165 R-PBGA-B119 R-PQFP-G100 R-PQFP-G100
长度 15 mm 22 mm 20 mm 20 mm
内存密度 9437184 bit 9437184 bit 9437184 bit 9437184 bit
内存集成电路类型 ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM
内存宽度 36 36 36 36
功能数量 1 1 1 1
端子数量 165 119 100 100
字数 262144 words 262144 words 262144 words 262144 words
字数代码 256000 256000 256000 256000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C
组织 256KX36 256KX36 256KX36 256KX36
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TBGA BGA LQFP LQFP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, THIN PROFILE GRID ARRAY FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL
认证状态 COMMERCIAL COMMERCIAL Not Qualified Not Qualified
座面最大高度 1.2 mm 2.4 mm 1.6 mm 1.6 mm
最大供电电压 (Vsup) 2.625 V 2.625 V 2.625 V 2.625 V
最小供电电压 (Vsup) 2.375 V 2.375 V 2.375 V 2.375 V
标称供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V
表面贴装 YES YES YES YES
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 BALL BALL GULL WING GULL WING
端子节距 1 mm 1.27 mm 0.65 mm 0.65 mm
端子位置 BOTTOM BOTTOM QUAD QUAD
宽度 13 mm 14 mm 14 mm 14 mm
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