CY7C243
4K x 8 Reprogrammable PROM
Features
CY7C244
D
D
D
Capable of withstanding greater than
2001V static discharge
D
D
D
CMOS for optimum speed/power
Windowed for reprogrammability
High speed
20 ns (commercial)
25 ns (military)
TTL compatible I/O
Direct replacement for bipolar
PROMs
Functional Description
D
Low power
550 mW (commercial)
660 mW (military)
D
D
D
EPROM technology 100% program
mable
300 mil or 600 mil packaging avail
able
5V ± 10% V
CC
, commercial and
military
The CY7C243 and CY7C244 are high
performance 4K x 8 CMOS PROMs. The
CY7C243 and CY7C244 are packaged in
300 mil wide and 600 mil wide packages
respectively. The reprogrammable pack
ages are equipped with an erasure win
dow. When exposed to UV light, these
PROMs are erased and can then be repro
grammed. The memory cells utilize prov
en EPROM floating gate technology and
byte wide intelligent programming algo
rithms.
The CY7C243 and CY7C244 are plug in
replacements for bipolar devices and offer
the advantages of lower power, superior
performance and programming yield. The
EPROM cell requires only 12.5V for the
supervoltage and low current require
ments allow for gang programming. The
EPROM cells allow for each memory lo
cation to be tested 100%, as each cell is
programmed, erased, and repeatedly exer
cised prior to encapsulation. Each PROM
is also tested for AC performance to guar
antee that after customer programming
the product will meet DC and AC specifi
cation limits.
Read is accomplished by placing an active
LOW signal on CS
1
and an active HIGH
on CS
2
. The contents of the memory loca
tion addressed by the address line (A
0
-
A
11
) will become available on the output
lines (O
0
- O
7
).
DIP/Flatpack
Top View
Logic Block Diagram
Pin Configurations
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
O
7
ROW
ADDRESS
PROGRAM
MABLE
ARRAY
COLUMN
MULTI
PLEXER
O
6
O
5
ADDRESS
DECODER
COLUMN
ADDRESS
O
4
O
3
O
2
O
1
O
0
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
O
1
O
2
GND
1
24
2
23
3
22
4
21
5
20
6
19
18
7
8 7C243 17
9 7C244 16
10
15
14
11
12
13
V
CC
A
8
A
9
A
10
CS
1
A
11
CS
2
O
7
O
6
O
5
O
4
O
3
C243-2
LCC/PLCC (Opaque Only)
Top View
CS
1
CS
2
C243-1
A
4
A
3
A
2
A
1
A
0
NC
O
0
4 3 2 1 28 27 26
25
5
7C243 24
6
23
7
22
8
21
9
20
10
19
1112 13 14 151617 18
O1
O2
GND
NC
O3
O4
O5
A5
A6
A7
NC
VCC
A8
A9
A
10
CS
1
A
11
CS
2
NC
O
7
O
6
C243-3
7C243-35
7C244-35
7C243-45
7C244-45
7C243-55
7C244-55
Selection Guide
7C243-20
7C243-25
7C244-25
Maximum Access Time (ns)
Commercial
Maximum Operating
Current (mA)
Military
Cypress Semiconductor Corporation
7C244-20
20
100
25
100
120
35
80
100
45
80
100
55
80
100
D
3901 North First Street
1
D
San Jose
D
CA 95134
D
408-943-2600
May 1994 - Revised August 1994
CY7C243
CY7C244
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines,
not tested.)
Storage Temperature . . . . . . . . . . . . . . . . . . -65
_
C to +150
_
C
Ambient Temperature with
Power Applied . . . . . . . . . . . . . . . . . . . . . . . -55
_
C to +125
_
C
Supply Voltage to Ground Potential
(V
CC
to GND) . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
DC Input Voltage . . . . . . . . . . . . . . . . . . . . . . . -3.0V to +7.0V
DC Program Voltage
(Pin 19 DIP, Pin 23 LCC) . . . . . . . . . . . . . . . . . . . . . . . . . . 13.0V
Electrical Characteristics
Static Discharge Voltage . . . . . . . . . . . . . . . . . . . . . . . . >2001V
(per MIL STD 883, Method 3015)
Latch Up Current . . . . . . . . . . . . . . . . . . . . . . . . . . . >200 mA
UV Exposure . . . . . . . . . . . . . . . . . . . . . . . . . . . 7258 Wsec/cm
2
Operating Range
Ambient
Range
Temperature
V
CC
Commercial
Industrial
[1]
Military
[2]
0
_
C to + 70
_
C
-40
_
C to + 85
_
C
-55
_
C to + 125
_
C
5V ± 10%
5V ± 10%
5V ± 10%
Over the Operating Range
[3, 4]
7C243-20, 25
7C244-20, 25
7C243-35, 45, 55
7C244-35, 45, 55
Min.
Max.
Unit
Parameter
Description
Test Conditions
Min.
Max.
V
OH
V
OH
V
OL
V
OL
V
IH
V
IL
I
IX
V
CD
I
OZ
I
OS
I
CC
V
PP
I
PP
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Level
Input LOW Level
Input Current
Input Diode Clamp Voltage
Output Leakage Current
Output Short Circuit Current
[5]
Power Supply Current
Programming Supply Voltage
Programming Supply Current
[4]
Description
V
CC
= Min., I
OH
= -2.0 mA
V
CC
= Min., I
OH
= -4.0 mA
V
CC
= Min., I
OL
= 8 mA
(6 mA Mil)
V
CC
= Min., I
OL
= 16 mA
2.4
2.4
0.4
0.4
2.0
V
CC
+ 0.3
0.8
+10
Note 4
+10
-90
100
120
12
13
50
12
2.0
-10
-10
-20
V
CC
+ 0.3
0.8
+10
Note 4
+10
-90
80
100
13
50
V
V
V
V
V
V
GND < V
IN
< V
CC
0 < V
OUT
< V
CC
,
Output Disabled
V
CC
= Max.,
V
OUT
= GND
V
CC
= Max.,
,
I
OUT
= 0 mA
Com'l
Mil
-10
-10
-20
m
A
m
A
mA
mA
V
mA
Capacitance
Parameter
Test Conditions
Max.
Unit
C
IN
C
OUT
Notes:
Input Capacitance
Output Capacitance
T
A
= 25
_
C, f = 1 MHz,
V
CC
= 5.0V
5 0V
4.
5.
10
10
pF
pF
1.
2.
3.
See the Ordering Information section regarding industrial tempera
ture range specification.
T
A
is the instant on" case temperature.
See the last page of this specification for Group A subgroup testing in
formation.
See the Introduction to CMOS PROMs" section of the Cypress Data
Book for general information on testing.
For test purposes, not more than one output at a time should be
shorted. Short circuit test duration should not exceed 30 seconds.
2
7c243: Wednesday, May 11, 1994
Revision: August 19, 1994
CY7C243
CY7C244
AC Test Loads and Waveforms
[4]
Test Load for -20 through -25 speeds
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
R1 500
(658
W
MIL)
R2 333
W
(403
W
MIL)
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
R1 500
W
(658
W
MIL)
R2 333
W
(403
W
MIL)
C243-4
3.0V
GND
< 5 ns
ALL INPUT PULSES
90%
90%
10%
10%
< 5 ns
C243-5
(a) Normal Load
(b) High Z Load
Equivalent to: THÉVENIN EQUIVALENT
R
TH
200
W
(250
W
MIL)
OUTPUT
2.0V (1.9V MIL)
Test Load for -35 through -55 speeds
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
R1 250
W
5V
OUTPUT
R2 167
W
5 pF
INCLUDING
JIG AND
SCOPE
R1 250
W
R2 167
W
C243-6
(c) Normal Load
(d) High Z Load
Equivalent to: THÉVENIN EQUIVALENT
R
TH
100
W
OUTPUT
2.0V
Switching Characteristics
Over the Operating Range
[2, 3, 4]
7C243-20
7C244-20
Parameter
t
AA
t
HZCS
(Com'l)
t
HZCS
(Mil)
t
ACS
(Com'l)
t
ACS
(Mil)
Chip Select Active to Output V
alid
15
20
25
25
ns
Chip Select Active to Output V
alid
12
12
20
25
25
ns
Chip Select Inactive to High Z
15
20
25
25
ns
7C243-25
7C244-25
Min.
Max.
25
12
7C243-35
7C244-35
Min.
Max.
35
20
7C243-45
7C244-45
Min.
Max.
45
25
7C243-55
7C244-55
Min.
Max.
55
25
Description
Address to Output V
alid
Chip Select Inactive to High Z
Min.
Max.
20
12
Unit
ns
ns
3
7c243: Wednesday, May 11, 1994
Revision: August 19, 1994
CY7C243
CY7C244
Switching Waveforms
A
0
- A
11
ADDRESS
[4]
CS
1
CS
2
t
AA
O
0
- O
7
t
HZCS
t
ACS
t
HZCS
t
ACS
C243-7
Erasure Characteristics
Wavelengths of light less than 4000 Angstroms begin to erase the
devices in the windowed package. For this reason, an opaque label
should be placed over the window if the PROM is exposed to sun
light or fluorescent lighting for extended periods of time.
The recommended dose of ultraviolet light for erasure is a wave
length of 2537 Angstroms for a minimum dose (UV intensity mul
tiplied by exposure time) of 25 Wsec/cm
2
. For an ultraviolet lamp
with a 12 mW/cm
2
power rating, the exposure time would be ap
proximately 35 minutes. The CY7C243 or CY7C244 needs to be
within 1 inch of the lamp during erasure. Permanent damage may
result if the PROM is exposed to high intensity UV light for an
extended period of time. 7258 Wsec/cm
2
is the recommended
maximum dosage.
Operating Modes
Read is the normal operating mode for a programmed device. In
this mode, all signals are normal TTL levels. The PROM is ad
dressed with a 12 bit field, an active LOW signal is applied to CS
1
,
an active HIGH is applied to CS
2
, and the contents of the ad
dressed location appear on the data out pins.
Read or Output Disable
Mode Program
Read
Output Disable
Output Disable
A
11
V
PP
A
11
A
11
A
11
Table 1. Mode Selection
Pin Function
A
10
A
9
A
8
LATCH
PGM
VFY
A
10
A
10
A
10
A
9
A
9
A
9
A
8
A
8
A
8
[6]
CS
1
CS
1
V
IL
V
IH
X
CS
2
NA
V
IH
X
V
IL
O
7
- O
0
D
7
- D
0
O
7
- O
0
High Z
High Z
Notes:
6.
Programming Information
X can be V
IL
or V
IH
.
Programming support is available from Cypress as well as from a
number of third party software vendors. For detailed program
ming information, including a listing of software packages, please
see the PROM Programming Information located at the end of
this section. Programming algorithms can be obtained from any
Cypress representative.
4
7c243: Wednesday, May 11, 1994
Revision: August 19, 1994
CY7C243
CY7C244
T
ypical DC and AC Characteristics
NORMALIZED SUPPLY CURRENT
vs. AMBIENT TEMPERATURE
NORMALIZED ACCESS TIME
vs. SUPPLY VOLTAGE
NORMALIZED SUPPLY CURRENT
vs. SUPPLY VOLTAGE
1.6
1.2
NORMALIZED ACCESS TIME
1.2
NORMALIZED I
CC
NORMALIZED I
CC
1.4
1.1
1.0
1.2
1.0
0.8
1.0
0.8
T
A
= 25 C
f = f
MAX
_
0.9
0.6
T
A
= 25 C
0.4
_
0.6
4.0
4.5
5.0
5.5
6.0
0.8
-55
25
125
4.0
4.5
5.0
5.5
6.0
SUPPLY VOLTAGE (V)
AMBIENT TEMPERATURE ( C)
_
SUPPLY VOLTAGE (V)
NORMALIZED ACCESS TIME
OUTPUT SOURCE CURRENT
TYPICAL ACCESS TIME CHANGE
vs. OUTPUT LOADING
OUTPUT SOURCE CURRENT (mA)
vs. TEMPERATURE
vs. VOLTAGE
1.6
NORMALIZED ACCESS TIME
60
35
30
(ns)
50
1.4
25
40
AA
1.2
20
DELTA t
30
15
1.0
20
10
5
V
CC
= 4.5V
T
A
= 25 C
0.8
10
_
0.6
- 55
25
125
0
0
1.0
2.0
3.0
4.0
0
0
200
400
600
800
1000
AMBIENT TEMPERATURE ( C)
_
OUTPUT VOLTAGE (V)
CAPACITANCE (pF)
OUTPUT SINK CURRENT
vs. OUTPUT VOLTAGE
NORMALIZED SUPPLY CURRENT
vs. CYCLE PERIOD
OUTPUT SINK CURRENT (mA)
175
150
NORMALIZED I
CC
1.05
1.00
V
CC
= 5.5V
T
A
= 25 C
125
100
0.95
0.90
_
75
V
CC
= 5.0V
50
25
0
0.0
1.0
2.0
3.0
4.0
T
A
= 25 C
0.85
_
0.80
0.75
0.70
0
25
50
75
100
OUTPUT VOLTAGE (V)
CYCLE PERIOD (ns)
5
