TetraFET
D1018UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B
A
C
E
(2 pls)
K
1
2
3
4
F
G
8
J
Typ.
7
6
5
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
100W – 28V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
D
M
Q
P
I
N
O
H
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
DD
PIN 1
PIN 3
PIN 5
PIN 7
SOURCE (COMMON) PIN 2
DRAIN 2
PIN 4
SOURCE (COMMON) PIN 6
GATE 1
PIN 8
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
P
Q
mm
9.14
12.70
45°
6.86
0.76
9.78
19.05
4.19
3.17
1.52R
1.65R
16.51
22.86
0.13
6.35
10.77
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.13
0.13
0.13
0.02
0.64
0.13
DRAIN 1
SOURCE (COMMON)
GATE 2
SOURCE (COMMON)
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.005
0.005
0.005
0.001
0.025
0.005
Inches
0.360
0.500
45°
0.270
0.030
0.385
0.750
0.165
0.125
0.060R
0.065R
0.650
0.900
0.005
0.250
0.424
APPLICATIONS
•
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
250W
70V
±20V
15A
–65 to 150°C
200°C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95
D1018UK
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
PER SIDE
BV
DSS
I
DSS
I
GSS
g
fs
G
PS
η
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Forward Transconductance *
Common Source Power Gain
Drain Efficiency
V
GS
= 0
V
DS
= 28V
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 100W
V
DS
= 28V
f = 500MHz
I
DQ
= 1.2A
I
D
= 100mA
V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 3A
1
2.4
10
50
20:1
V
GS
= –5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
70
Typ.
Max. Unit
V
3
1
7
mA
µA
V
S
dB
%
—
180
90
7.5
pF
pF
pF
V
GS(th)
Gate Threshold Voltage *
TOTAL DEVICE
VSWR Load Mismatch Tolerance
C
iss
C
oss
C
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Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
PER SIDE
V
DS
= 28V
V
DS
= 28V
V
DS
= 28V
* Pulse Test:
Pulse Duration = 300
µs
, Duty Cycle
≤
2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case
Max. 0.7°C / W
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95
