Data Sheet
Switching Diode
DAN202U
Applications
Ultra high speed switching
Dimensions
(Unit : mm)
Land
size figure
(Unit : mm)
1.3
2.0±0.2
各リードとも
Each lead has same dimension
0.15±0.05
同寸法
(3)
Features
1) Small mold type (UMD3).
2) High reliability.
0.65
0.9MIN.
1.25±0.1
2.1±0.1
0.8MIN
0½0.1
UMD3
(2)
(1)
（0.65）
0.7±0.1
0.9±0.1
Construction
Silicon epitaxial planar
0.1Min
（0.65）
1.3±0.1
Structure
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
Taping
specifications
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
0.3±0.1
3.5±0.05
1.75±0.1
8.0±0.2
2.4±0.1
5.5±0.2
2.25±0.1
0
4.0±0.1
φ0.5±0.05
0½0.1
2.4±0.1
1.25±0.1
Absolute
maximum ratings
(Ta=25°C)
Parameter
Symbol
V
RM
Reverse voltage (repetitive peak)
V
R
Reverse voltage (DC)
I
FM
Forward current (Single)
Average rectified forward current (Single)
Io
I
surge
Surge current (t=1us)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Limits
80
80
300
100
4
200
150
55
to
150
Unit
V
V
mA
mA
A
mW
°C
°C
Electrical
characteristics
(Ta=25°C)
Parameter
Symbol
V
F
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
I
R
Ct
trr
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.2
0.1
3.5
4
Unit
V
μA
pF
ns
I
F
=100mA
V
R
=70V
Conditions
V
R
=6V , f=1MHz
V
R
=6V , I
F
=5mA , RL=50Ω
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© 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.06 - Rev.A
1.6
0.3±0.1
DAN202U
Data Sheet
Ta=150℃
100
Ta=75℃
Ta=125℃
10
Ta=25℃
Ta=150℃
Ta=-25℃
1
10000
1000
Ta=125℃
10
f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
Ta=75℃
100
Ta=25℃
10
1
0.1
0.01
Ta=-25℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
1
0.1
0 100 200 300 400 500 600 700 800 900 100
0
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.1
0
10
20 30 40 50 60 70
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
80
0
5
10
15
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
20
950
100
10
Ta=25℃
VR=80V
n=10pcs
9
Ta=25℃
VR=6V
f=1MHz
n=10pcs
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
940
930
920
910
AVE:921.7mV
900
VF DISPERSION MAP
Ta=25℃
IF=100mA
n=30pcs
90
80
70
60
50
40
30
20
10
0
AVE:9.655nA
8
7
6
5
4
3
2
1
0
AVE:1.17pF
IR DISPERSION MAP
Ct DISPERSION MAP
20
10
5
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
15
1cyc
8.3ms
REVERSE RECOVERY TIME:trr(ns)
9
8
7
6
5
4
3
2
1
0
AVE:1.93ns
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
4
3
2
1
0
1
Ifsm
8.3ms 8.3ms
1cyc
10
5
AVE:3.50A
0
IFSM DISRESION MAP
trr DISPERSION MAP
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
100
1000
10
Rth(j-a)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
9
PEAK SURGE
FORWARD CURRENT:IFSM(A)
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
Ifsm
t
8
7
6
5
4
3
2
1
0
100
Rth(j-c)
Mounted on epoxy board
10
AVE:2.54kV
AVE:0.97kV
10
IM=1mA
IF=10mA
1ms
time
1
0.1
TIME:t(ms)
IFSM-t CHARACTERISTICS
1
10
100
1
0.001
300us
0.01
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
0.1
1000
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.06 - Rev.A
Notice
Notes
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R1120A
