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DB107

1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
1 A, 1000 V, 硅, 桥式整流二极管

器件类别:分立半导体    二极管   

厂商名称:FORMOSA

厂商官网:http://www.formosams.com/

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器件参数
参数名称
属性值
厂商名称
FORMOSA
Reach Compliance Code
unknow
ECCN代码
EAR99
其他特性
UL RECOGNIZED
最小击穿电压
1000 V
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
最大正向电压 (VF)
1.1 V
JESD-30 代码
R-PDIP-T4
最大非重复峰值正向电流
30 A
元件数量
4
相数
1
端子数量
4
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
IN-LINE
最大重复峰值反向电压
1000 V
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
DUAL
文档预览
DB101
SINGLE PHASE 1.0 AMP BRIDGE RECTIFIERS
THRU
DB107
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
1.0 Ampere
DB-1
+
FEATURES
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
plastic technique
* High surge current capability
* Polarity: marked on body
* Mounting position: Any
* Weight: 1.0 grams
.255(6.5)
.245(6.2)
~
~
.350(8.9)
.300(7.6)
.365(9.3)
.355(9.0)
.135(3.4)
.115(2.9)
.020
(0.5)
.165(4.2)
.155(3.9)
.060
1.5
.205(5.2)
.195(5.0)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=40 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage Drop per Bridge Element at 1.0A D.C.
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Operating Temperature Range, T
J
Storage Temperature Range, T
STG
Ta=125 C
DB101 DB102 DB103 DB104 DB105 DB106 DB107 UNITS
50
35
50
100
70
100
200
140
200
400
280
400
1.0
50
1.1
10
500
-65 +125
-65 +150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
mA
mA
C
C
RATING AND CHARACTERISTIC CURVES (DB101 THRU DB107)
FIG.1-TYPICAL FORWARD CURRENT
DERATING CURVE
1.2
1.0
0.8
0.6
0.4
0.2
0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
FIG.2-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,(A)
50
AVERAGE FORWARD CURRENT,(A)
40
30
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
20
10
0
25
50
75
100 125
150
175
CASE TEMPERATURE,( C)
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
FIG.3-TYPICAL FORWARD
CHARACTERISTICS
50
INSTANTANEOUS FORWARD CURRENT,(A)
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
50
3.0
1.0
Tj=25 C
Pulse Width 300us
1% Duty Cycle
REVERSE LEAKAGE CURRENT, (mA)
10
10
3.0
1.0
0.1
0.1
Tj=25 C
.01
0
.2
.4
.6
.8
1.0
1.2
1.4
.01
0
20
40
60
80
100 120 140
FORWARD VOLT
AGE,(V)
PERCENT OF RATED PEAK REVERSE VOLT
AGE, (%)
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参数对比
与DB107相近的元器件有:DB101、DB102、DB103、DB104、DB105、DB106。描述及对比如下:
型号 DB107 DB101 DB102 DB103 DB104 DB105 DB106
描述 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE
厂商名称 FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA
Reach Compliance Code unknow unknow unknow unknown unknown unknow unknown
其他特性 UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
最小击穿电压 1000 V 50 V 100 V 200 V 400 V 600 V 800 V
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
最大正向电压 (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 代码 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4
最大非重复峰值正向电流 30 A 30 A 30 A 30 A 30 A 30 A 30 A
元件数量 4 4 4 4 4 4 4
相数 1 1 1 1 1 1 1
端子数量 4 4 4 4 4 4 4
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 1 A 1 A 1 A 1 A 1 A 1 A 1 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
最大重复峰值反向电压 1000 V 50 V 100 V 200 V 400 V 600 V 800 V
表面贴装 NO NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
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