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DB152S

Bridge Rectifier Diode, 1.5A, 100V V(RRM),

器件类别:分立半导体    二极管   

厂商名称:Galaxy Semi-Conductor Co Ltd

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
Reach Compliance Code
unknown
配置
BRIDGE, 4 ELEMENTS
二极管类型
BRIDGE RECTIFIER DIODE
最大正向电压 (VF)
1.1 V
最大非重复峰值正向电流
30 A
元件数量
4
最高工作温度
150 °C
最大输出电流
1.5 A
最大重复峰值反向电压
100 V
表面贴装
YES
Base Number Matches
1
文档预览
BL
GALAXY ELECTRICAL
SILICON BRIDGE RECTIFIERS
FEATURES
Rating to 1000V PRV
Surge overload rating to 30 Amperes peak
Glass passivated chip junctions
6.3± 0.2
DB151S - - - DB157S
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.5 A
DB-S
1± 0.1
7.9± 0.2
8.3± 0.3
6.4± 0.1
0.3
1.2± 0.3
10± 0.6
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Lead: silver plated copper, solderde plated
8.3± 0.1
94V-O
Polarity symbols molded on body
Weight: 0.016 ounces,0.45 grams
2.5± 0.15
Plastic material has UL flammability classification
5± 0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
DB
151S
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current
@T
A
=25
DB
152S
100
70
100
DB
153S
200
140
200
DB
154S
400
280
400
1.5
DB
155S
600
420
600
DB
156S
800
560
800
DB
157S
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 1.5 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
40
A
V
F
I
R
T
J
T
STG
1.1
10.0
1.0
- 55 ---- + 150
- 55 ---- + 150
V
μ
A
mA
Operating junction temperature range
Storage temperature range
www.galaxycn.com
Document Number 0287004
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- TYPICAL FORWARD CURRENT DERATING CURVE
2.0
DB151S - - - DB157S
FIG.2 -- MAXIMUM NON-REPETITIVE FORWARD SURGE
VVVVVVVCURRENT
AVERAGE FORWARD OUTPUT CURRENT,
AMPERSE
PEAK FORWARD SURGE CURRENT,
60
1.5
50
40
AMPERSE
8.3ms Single Half Sine Wave
T
J
=25
1.0
30
0.5
20
10
0
0
25
50
75
100
125
150
0
1
5
10
50
1 00
AMBIENT TEMPERATURE,
NUMBER OF CYCLES AT 60H
Z
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
100
INSTANTANEOUS FORWARD CURRENT,
10
INSTANTANEOUS REVERSE CURRENT,
MICRO AMPERSE
10
1 .0
AMPERSE
1.0
T
J
=25
0 .1
 
T =125
J
0.1
P u ls e W id th
=300
u
S
.0 1
0 .4
0 .6
0 .8
1 .0
1 .2
1 .4
.01
0
20
40
60
80
100
120
140
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
www.galaxycn.com
Document Number 0287004
BL
GALAXY ELECTRICAL
2.
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