DB2S314
Silicon epitaxial planar type
For high speed switching circuits
DB2J314 in SSMini2 type package
Features
Small reverse current I
R
Short reverse recovery time t
rr
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: C6
Packaging
DB2S31400L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
1: Cathode
2: Anode
Rating
30
30
30
150
125
–40 to +85
–55 to +125
Unit
V
V
mA
mA
°C
°C
°C
V
R
V
RM
I
F
I
FM
T
j
T
opr
T
stg
Panasonic
JEITA
Code
SSMini2-F5-B
SC-79
SOD-523
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*1
Symbol
V
F1
V
F2
I
R
C
t
t
rr
I
F
= 1 mA
I
F
= 30 mA
V
R
= 30 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 10 mA, I
rr
= 1 mA, R
L
= 100
Ω
1.5
1.0
Conditions
Min
Typ
Max
0.4
1.0
300
Unit
V
nA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
*1: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
= 1 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
Ω
Ver. EED
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100
Ω
Pulse Generator
(PG-10N)
R
s
= 50
Ω
Publication date: April 2013
1
DB2S314
DB2S314_ I
F
-V
F
10
−1
I
F
V
F
DB2S314_ I
R
-V
R
DB2S314_Ct-VR
I
R
V
R
C
t
V
R
5.0
T
a
=
25°C
Pulse test
10
−4
10
−5
T
a
= 125°C
Forward current I
F
(A)
Reverse current I
R
(A)
10
−2
T
a
= 125°C
10
−6
10
−7
10
−8
10
−9
85°C
25°C
Terminal capacitance C
t
(pF)
4.0
3.0
10
−3
85°C
25°C
−40°C
2.0
10
−4
−40°C
1.0
10
−10
10
−5
10
−11
0
0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
0
10
20
30
Forward voltage V
F
(V)
Reverse voltage V
R
(V)
Reverse voltage V
R
(V)
Ver. EED
2
DB2S314
SSMini2-F5-B
Unit: mm
Land Pattern (Reference) (Unit: mm)
Ver. EED
3
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semiconductors described in this book
(1)
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Consult our sales staff in advance for information on the following applications:
–
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Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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