DCR720E
DCR720E
Phase Control Thyristor
Preliminary Information
DS5485-1.2 February 2002
FEATURES
s
s
s
Double Side Cooling
High Surge Capability
Low Inductance Internal Construction
KEY PARAMETERS
1800V
V
DRM
724A
I
T(AV)
9800A
I
TSM
dV/dt*
1000V/
µ
s
dI/dt
700A/
µ
s
*Higher dV/dt selections available
APPLICATIONS
s
s
s
High Power Converters
DC Motor Control
High Voltage Power Supplies
VOLTAGE RATINGS
Part and Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
DRM
V
1800
1600
1400
1200
Conditions
DCR720E18
DCR720E16
DCR720E14
DCR720E12
T
vj
= 0˚ to 125˚C,
I
DRM
= I
RRM
= 30mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Outline type code:
E
(See Package Details for further information)
Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR720E16
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
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DCR720E
CURRENT RATINGS
T
case
= 60˚C unless stated otherwise.
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
724
1140
1025
A
A
A
Parameter
Test Conditions
Max.
Units
Single Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
500
790
670
A
A
A
T
case
= 80˚C unless stated otherwise.
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
570
895
790
A
A
A
Parameter
Test Conditions
Max.
Units
Single Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
390
610
505
A
A
A
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DCR720E
SURGE RATINGS
Symbol
I
TSM
I
2
t
I
TSM
I
2
t
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Surge (non-repetitive) on-state current
I
2
t for fusing
Test Conditions
10ms half sine, T
case
= 125˚C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine, T
case
= 125˚C
V
R
= 0
Max.
7.8
0.3 x 10
6
9.8
0.48 x 10
6
Units
kA
A
2
s
kA
A
2
s
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
RRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125˚C
To 67% V
DRM
, T
j
= 125˚C
From 67% V
DRM
to 1100A
Repetitive 50Hz
Min.
-
-
-
-
Max.
30
1000
350
700
Units
mA
V/µs
A/µs
A/µs
Gate source 20V, 10Ω, Non-repetitive
t
r
≤
0.5µs, T
j
= 125˚C
V
T(TO)
r
T
t
gd
Threshold voltage
On-state slope resistance
Delay time
At T
vj
= 125˚C
At T
vj
= 125˚C
V
D
= 67% V
DRM
, gate source 10V, 5Ω
t
r
= 0.5µs, Tj = 25˚C
t
q
Turn-off time
I
T
= 500A, t
p
= 1ms, T
j
=125˚C,
V
R
= 50V, dI
RR
/dt = 20A/µs,
V
DR
= 67% V
DRM
,
dV
DR
/dt = 20V/µs linear
I
L
I
H
Latching current
Holding current
T
j
= 25˚C, V
D
= 5V
T
j
= 25˚C, V
D
= 5V
-
-
-
0.88
0.65
1.5
V
mΩ
µs
300
400
µs
-
-
500
70
mA
mA
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DCR720E
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance - junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance - case to heatsink
Clamping force 8.0kN
Double side
Min.
-
-
-
-
-
-
-
–55
7.2
Max.
0.041
0.074
0.092
0.018
0.036
135
125
125
8.8
Units
˚CW
˚CW
˚CW
˚CW
˚CW
˚C
˚C
˚C
kN
(with mounting compound) Single side
T
vj
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
T
stg
F
m
Storage temperature range
Clamping force
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table, gate characteristics curve
-
Max.
3
150
0.25
30
0.25
5
10
100
5
Units
V
mA
V
V
V
V
A
W
W
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DCR720E
CURVES
3000
T
j
= 125˚C
1200
2500
1000
Instantaneous on-state current, I
T(AV)
- (A)
Mean power dissipation - (W)
2000
800
1500
600
1000
400
500
200
dc
1/2 wave
3 phase
6 phase
200
400
600
800
Mean on-state current, I
T(AV)
- (A)
1000
0
0.5
1.0
1.5
2.0
2.5
Instantaneous on-state voltage, V
T
- (V)
3.0
0
0
Fig.2 Maximum (limit) on-state characteristics
V
TM
Equation:-
V
TM
= A + Bln (I
T
) + C.I
T
+D.√I
T
Where
A = 0.2366
B = 0.1182
C = 0.0005
D = –0.0019
these values are valid for T
j
= 125˚C for I
T
100A to 3000A
Fig.3 Power dissipation
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