DCR806SG
DCR806SG
Phase Control Thyristor
Advance Information
Supersedes August 2000 version, DS4642-5.1
DS4642 -6.0 July 2001
FEATURES
s
Double Side Cooling
s
High Surge Capability
s
High Mean Current
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dVdt*
dI/dt
2800V
844A
11250A
1000V/
µ
s
500A/
µ
s
APPLICATIONS
s
High Power Drives
s
High Voltage Power Supplies
s
DC Motor Control
s
Power Supplies
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
2800
2700
2600
2500
2400
Conditions
DCR806SG28
DCR806SG27
DCR806SG26
DCR806SG25
DCR806SG24
T
vj
= 0˚ to 125˚C,
I
DRM
= I
RRM
= 50mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
Respectively
Outline type code: G.
See Package Details for further information.
Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR806SG26
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DCR806SG
CURRENT RATINGS
T
case
= 60˚C unless stated otherwise
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
844
1326
1201
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
555
872
733
A
A
A
CURRENT RATINGS
T
case
= 80˚C unless stated otherwise
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
670
1050
875
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
430
675
540
A
A
A
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DCR806SG
SURGE RATINGS
Symbol
I
TSM
I
2
t
I
TSM
I
2
t
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Surge (non-repetitive) on-state current
I
2
t for fusing
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
9.0
405 x 10
3
11.25
633 x 10
3
Units
kA
A
2
s
kA
A
2
s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 12.5kN
with mounting compound
On-state (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Clamping force
-
-55
11.0
125
125
13.0
o
Min.
dc
Anode dc
-
-
-
-
-
-
Max.
0.032
0.064
0.064
0.008
0.016
135
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
Double side
Single side
o
R
th(c-h)
Thermal resistance - case to heatsink
o
C
C
C
o
kN
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DCR806SG
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
Parameter
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Conditions
At V
RRM
/V
DRM
, T
case
= 125
o
C
To 67% V
DRM
T
j
= 125
o
C. Gate open circuit.
From 67% V
DRM
to 1500A
Gate source 1.5A
t
r
= 0.5µs, T
j
= 125
o
C
At T
vj
= 125
o
C
At T
vj
= 125
o
C
V
D
= 67% V
DRM
, Gate source 30V, 15Ω
t
r
= 0.5µs, T
j
= 25
o
C
Repetitive 50Hz
Non-repetitive
Typ.
-
-
-
-
-
-
-
Max.
50
1000
300
500
0.91
0.65
1.5
Units
mA
V/µs
A/µs
A/µs
V
mΩ
µs
dI/dt
Rate of rise of on-state current
V
T(TO)
r
T
t
gd
Threshold voltage
On-state slope resistance
Delay time
I
T
= 500A, t
p
= 1ms, T
j
= 125˚C,
t
q
Turn-off time
V
R
= 50V, dI
RR
/dt = 20A/µs,
V
DR
= 67% V
DRM
, dV
DR
/dt = 20V/µs linear
T
j
= 25
o
C, V
D
= 5V
T
j
= 25
o
C, V
D
= 5V
300
500
µs
I
L
I
H
Latching current
Holding current
550
60
1000
100
mA
mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Anode positive with respect to cathode
See table, gate characteristics curve
Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
Max.
3.5
200
0.25
30
0.25
5
10
150
10
Units
V
mA
V
V
V
V
A
W
W
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DCR806SG
CURVES
2500
Measured under pulse
conditions
3000
1: T
j
= 125˚C Min
2: T
j
= 125˚C Max
1
2
2500
Instantaneous on-state current, I
T
- (A)
2000
2000
Power loss - (W)
1500
1500
1000
1000
500
500
D.C.
Half wave
3 Phase
6 Phase
500
1000
1500
Mean current, I
T(AV)
- (A)
2000
0
0.5
1.0
1.5
2.0
Instantaneous on-state voltage, V
T
- (V)
2.5
0
0
Fig.2 Maximum (limit) on-state characteristics
V
TM
Equation:-
V
TM
= A + Bln (I
T
) + C.I
T
+D.√I
T
Where A = 0.6102629
B = 0.08049203
C = 7.189037 x 10
–4
D = –0.01028328
these values are valid for T
j
= 125˚C for I
T
500A to 2500A
Fig.3 Dissipation curves
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