DDA (xxxx) K
PNP PRE-BIASED SMALL SIGNAL SOT-26
DUAL SURFACE MOUNT TRANSISTOR
Features
NEW PRODUCT
Available in Lead Free/RoHS Compliant Version (Note 3)
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-26
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Copper leadframe). Please see Ordering
Information, Note 5, on Page 2
Marking: Date Code and Marking Code (See Diagrams &
Page 2)
Ordering Information (See Page 2)
Weight: 0.015 grams (approximate)
P/N
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
DDA143TK
DDA114TK
R1
22KW
47KW
10KW
2.2KW
10KW
4.7KW
10KW
R2
22KW
47KW
47KW
47KW
10KW
-
-
MARKING
P17
P20
P14
P06
P13
P07
P12
K
J
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Symbol
V
CC
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
DDA143TK
DDA114TK
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
DDA143TK
DDA114TK
All
Value
50
+10 to -40
+10 to -40
+6 to -40
+5 to -12
+10 to -40
+5 Vmax
+5 Vmax
-30
-30
-70
-100
-50
-100
-100
-100
300
416.7
-55 to +150
Unit
V
Characteristic
Supply Voltage, (1) to (6) and (4) to (3)
Input Voltage, (2) to (1) and (5) to (4)
Output Current
Output Current
Power Dissipation (Total)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Note:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. 200mW per element must not be exceeded.
3. No purposefully added lead.
DS30349 Rev. 5 - 2
1 of 6
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PXX YM
PXX YM
G
H
D
·
·
·
·
Epitaxial Planar Die Construction
Complementary NPN Types Available (DDC)
Built-In Biasing Resistors
A
SOT-26
Dim
B C
Min
0.35
1.50
2.70
Max
0.50
1.70
3.00
0.95
1.90
Typ
0.38
1.60
2.80
A
B
C
D
G
M
H
J
K
L
M
a
2.90
1.00
0.35
0.10
0°
3.10
1.30
0.55
0.20
8°
3.00
0.05
1.10
0.40
0.15
¾
0.013 0.10
L
All Dimensions in mm
6
5
R
1
R
2
R
2
R
1
4
6
5
R
1
R
1
4
1
2
R
1
, R
2
3
1
2
R
1
Only
3
SCHEMATIC DIAGRAM
V
IN
V
I
O
mA
I
C
(Max)
P
d
R
qJA
T
j
, T
STG
mA
mW
°C/W
°C
DDA (xxxx) K
ã
Diodes Incorporated
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
DR
1
f
T
Min
-50
-50
-5
¾
¾
¾
100
-30
¾
Typ
¾
¾
¾
¾
¾
¾
250
¾
250
Max
¾
¾
¾
-0.5
-0.5
-0.3
600
+30
¾
Unit
V
V
V
mA
mA
V
--
%
MHz
Test Condition
I
C
= -50mA
I
C
= -1mA
I
E
= -50mA
V
CB
= -50V
V
EB
= -4V
I
C
/I
B
= -2.5mA /- 0.25mA
I
C
/I
B
= -1mA /- 0.1mA
¾
V
CE
= -10V, I
E
= 5mA, f = 100MHz
DDA143TK
DDA114TK
NEW PRODUCT
Characteristic (DDA143TK & DDA114TK only)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Input Resistor (R
1
) Tolerance
Gain-Bandwidth Product*
I
C
= -1mA, V
CE
= -5V
Characteristic
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
Symbol
Min
-0.5
-0.5
-0.3
-0.5
-0.5
¾
Typ
-1.1
-1.1
¾
¾
-1.1
-1.9
-1.9
¾
¾
-1.9
Max
¾
Unit
Test Condition
V
l(off)
V
CC
= -5V, I
O
= -100mA
V
Input Voltage
V
l(on)
-3.0
-3.0
-1.4
-1.1
-3.0
V
O
= -0.3, I
O
= -5mA
V
O
= -0.3, I
O
= -2mA
V
O
= -0.3, I
O
= -1mA
V
O
= -0.3, I
O
= -5mA
V
O
= -0.3, I
O
= -10mA
I
O
/I
l
= -10mA /- 0.5mA
I
O
/I
l
= -10mA /- 0.5mA
I
O
/I
l
= -5mA / -0.25mA
I
O
/I
l
= -5mA / -0.25mA
I
O
/I
l
= -10mA / -0.5mA
Output Voltage
V
O(on)
¾
-0.1
-0.3
V
Input Current
I
l
¾
¾
56
68
68
80
30
-30
-20
¾
¾
¾
¾
¾
¾
250
-0.36
-0.18
-0.88
-3.6
-0.88
-0.5
¾
mA
mA
¾
V
I
= -5V
Output Current
I
O(off)
V
CC
= 50V, V
I
= 0V
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -5mA
¾
¾
V
CE
= -10V, I
E
= -5mA,
f = 100MHz
DC Current Gain
G
l
DR
1
R
2
/R
1
f
T
Input Resistor (R
1
) Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product*
* Transistor - For Reference Only
+30
+20
¾
%
%
MHz
Ordering Information
(Note 4)
Device
DDA124EK-7
DDA144EK-7
DDA114YK-7
DDA123JK-7
DDA114EK-7
DDA143TK-7
DDA114TK-7
Notes:
Packaging
SOT-26
SOT-26
SOT-26
SOT-26
SOT-26
SOT-26
SOT-26
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: DDA114TK-7-F.
DS30349 Rev. 5 - 2
2 of 6
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DDA (xxxx) K
Marking Information
NEW PRODUCT
PXX YM
Date Code Key
Year
Code
Month
Code
Jan
1
2006
T
Feb
2
2007
U
Mar
3
Apr
4
2008
V
May
5
PXX = Product Type Marking Code
See Sheet 1 Diagrams
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
2009
W
Jun
6
Jul
7
2010
X
Aug
8
Sep
9
2011
Y
Oct
O
Nov
N
2012
Z
Dec
D
DS30349 Rev. 5 - 2
PXX YM
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DDA (xxxx) K
NEW PRODUCT
TYPICAL CURVES - DDA123JK
ONE SECTION
V
CE(SAT)
, COLLECTOR EMITTER VOLTAGE (V)
250
1
I
C
/I
B
= 10
P
D
, POWER DISSIPATION (mW)
200
0.1
25
°
C
75
°
C
-25
°
C
150
100
0.01
50
0
-50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Derating Curve
1000
V
CE
= 10V
0.001
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 V
CE(SAT)
vs. I
C
12
f = 1MHz
10
h
FE
, DC CURRENT GAIN
75
°
C
C
OB
, CAPACITANCE (pF)
8
6
4
2
0
-25
°
C
25
°
C
100
10
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
75°C
V
O
= 5V
25°C
0
100
5
10
15
20
25
30
V
R
, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
10
V
O
= 0.2V
100
I
C
, COLLECTOR CURRENT (mA)
10
-25°C
V
in
, INPUT VOLTAGE (V)
-25°C
1
1
75
°
C
0.1
25°C
0.01
0.001
0
1
2
3
4
5
6
7
8
9
10
V
in
, INPUT VOLTAGE (V)
Fig. 5 Collector Current Vs. Input Voltage
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Input Voltage vs. Collector Current
DS30349 Rev. 5 - 2
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DDA (xxxx) K
NEW PRODUCT
TYPICAL CURVES - DDA114TK
ONE SECTION
V
CE(SAT)
, COLLECTOR EMITTER VOLTAGE (V)
250
1
I
C
/I
B
= 10
P
D
, POWER DISSIPATION (mW)
200
0.1
75
°
C
25
°
C
-25
°
C
150
100
0.01
50
0
-50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Derating Curve
1000
75
°
C
V
CE
= 10V
0.001
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 V
CE(SAT)
vs. I
C
12
f = 1MHz
10
25
°
C
-25
°
C
C
OB
, CAPACITANCE (pF)
h
FE
, DC CURRENT GAIN
100
8
6
4
2
0
10
1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
75°C
0
100
5
10
15
20
25
30
V
R
, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
10
V
O
= 0.2V
100
I
C
, COLLECTOR CURRENT (mA)
25°C
10
V
in
, INPUT VOLTAGE (V)
-25°C
1
-25°C
1
75
°
C
25°C
0.1
0.01
0.001
0
1
2
3
4
5
6
7
8
9
10
1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Input Voltage vs. Collector Current
V
in
, INPUT VOLTAGE (V)
Fig. 5 Collector Current Vs. Input Voltage
DS30349 Rev. 5 - 2
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DDA (xxxx) K
嵌入式系统
