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DDC142JU-7-F

Bipolar Transistors - Pre-Biased 200MW 0.47K10K

器件类别:半导体    分立半导体   

厂商名称:Diodes

厂商官网:http://www.diodes.com/

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器件参数
参数名称
属性值
产品种类
Product Category
Bipolar Transistors - Pre-Biased
制造商
Manufacturer
Diodes
RoHS
Details
Configuration
Dual
Transistor Polarity
NPN
Typical Input Resistor
470 Ohms
Typical Resistor Ratio
0.047
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-363-6
DC Collector/Base Gain hfe Min
56
Collector- Emitter Voltage VCEO Max
40 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
系列
Packaging
MouseReel
系列
Packaging
Reel
系列
Packaging
Cut Tape
高度
Height
1 mm
长度
Length
2.2 mm
工厂包装数量
Factory Pack Quantity
3000
宽度
Width
1.35 mm
单位重量
Unit Weight
0.000212 oz
文档预览
DDC (LO-R1) U
NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Types Available (DDA)
Built-In Biasing Resistors
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
A
SOT-363
Dim
A
B C
Min
0.10
1.15
2.00
0.30
1.80
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin Solderable per MIL-STD-
202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe)
Terminal Connections: See Diagram
Marking Information: See Diagrams & Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
H
K
M
J
P/N
DDC122LU
DDC142JU
DDC122TU
DDC142TU
R1 (NOM)
0.22K
0.47K
0.22K
0.47K
R2 (NOM)
10K
10K
OPEN
OPEN
MARKING
N81
N82
N83
N84
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CC
DDC122LU
DDC142JU
DDC122TU
DDC142TU
All
(Note 1)
(Note 2)
V
IN
V
EBO (MAX)
I
C
P
d
R
θ
JA
Value
50
-5 to +6
-5 to +6
5
100
200
625
Unit
V
V
V
mA
mW
°C/W
Characteristic
Supply Voltage (6) to (1) and (3) to (4)
Input Voltage (2) to (1) and (5) to (4)
Input Voltage (1) to (2) and (4) to (5)
Output Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Notes:
1.
2.
3.
4.
5.
150mW per element must not be exceeded.
Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30424 Rev. 6 - 2
1 of 3
www.diodes.com
NXX YM
NXX YM
D
F
B
C
D
F
H
J
K
L
M
0.65 Nominal
L
α
All Dimensions in mm
6
5
R
1
R
2
R
2
R
1
4
6
5
R
1
R
1
4
1
2
R
1
, R
2
3
1
2
R
1
Only
3
SCHEMATIC DIAGRAM
DDC (LO-R1) U
© Diodes Incorporated
Electrical Characteristics
Characteristic
Input Voltage
@T
A
= 25°C unless otherwise specified
Symbol
DDC122LU
DDC142JU
DDC122LU
DDC142JU
DDC122LU
DDC142JU
DDC122LU
DDC142JU
V
l(off)
V
l(on)
V
O(on)
I
l
I
O(off)
G
l
f
T
Min
0.3
0.3
56
56
Typ
200
R1, R2 Types
Max
2.0
2.0
0.3V
28
13
0.5
Unit
V
V
V
mA
μA
Test Condition
V
CC
= 5V, I
O
= 100μA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
I
O
/I
l
= 5mA/0.25mA
V
I
= 5V
V
CC
= 50V, V
I
= 0V
V
O
= 5V, I
O
= 10mA
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*
* Transistor - For Reference Only
MHz V
CE
= 10V, I
E
= 5mA, f = 100MHz
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
* Transistor - For Reference Only
@T
A
= 25°C unless otherwise specified
Symbol
BV
CBO
BV
CEO
DDC122TU
DDC142TU
BV
EBO
I
CBO
DDC122TU
DDC142TU
DDC122TU
DDC142TU
I
EBO
V
CE(sat)
h
FE
f
T
Min
50
40
5
100
100
Typ
250
250
200
R1- Only
Max
0.5
0.5
0.5
0.3
600
600
Unit
V
V
V
μA
μA
V
I
C
= 50μA
I
C
= 1mA
I
E
= 50μA
I
E
= 50μA
V
CB
= 50V
V
EB
= 4V
I
C
= 5mA, I
B
= 0.25mA
I
C
= 1mA, V
CE
= 5V
Test Condition
MHz V
CE
= 10V, I
E
= -5mA, f = 100MHz
250
P
d
, POWER DISSIPATION (mW)
200
150
100
50
0
-50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Power Derating Curve
(150mW per element must not be exceeded).
DS30424 Rev. 6 - 2
2 of 3
www.diodes.com
DDC (LO-R1) U
© Diodes Incorporated
Ordering Information
(Note 6)
Device
DDC122LU-7-F
DDC142JU-7-F
DDC122TU-7-F
DDC142TU-7-F
Notes:
Packaging
SOT-363
SOT-363
SOT-363
SOT-363
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
NXX YM
NXX = Product Type Marking Code
See Page 1 Diagrams
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
2002
N
Jan
1
2003
P
Feb
2
Mar
3
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30424 Rev. 6 - 2
NXX YM
2004
R
2005
S
Apr
4
2006
T
May
5
Jun
6
2007
U
Jul
7
2008
V
Aug
8
2009
W
Sep
9
2010
X
Oct
O
2011
Y
Nov
N
2012
Z
Dec
D
3 of 3
www.diodes.com
DDC (LO-R1) U
© Diodes Incorporated
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