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DEI1041-SES

Line Receiver, 1 Func, 1 Rcvr, BICMOS, PDSO8, PLASTIC, MS-012AC, SOIC-8

器件类别:模拟混合信号IC    驱动程序和接口   

厂商名称:Device Engineering Incorporated

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
零件包装代码
SOIC
包装说明
SOP,
针数
8
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
ALSO OPERATES ON 5 VOLT SUPPLY
输入特性
DIFFERENTIAL SCHMITT TRIGGER
接口集成电路类型
LINE RECEIVER
接口标准
ARINC 429
JESD-30 代码
R-PDSO-G8
JESD-609代码
e0
长度
4.9022 mm
湿度敏感等级
1
功能数量
1
端子数量
8
最高工作温度
85 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
240
认证状态
Not Qualified
最大接收延迟
1000 ns
接收器位数
1
座面最大高度
1.7526 mm
最大供电电压
3.63 V
最小供电电压
2.97 V
标称供电电压
3.3 V
表面贴装
YES
技术
BICMOS
温度等级
OTHER
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
宽度
3.9116 mm
Base Number Matches
1
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Device
Engineering
Incorporated
385 East Alamo Drive
Chandler, AZ 85225
Phone: (480) 303-0822
Fax: (480) 303-0824
E-mail: admin@deiaz.com
DEI1041
ARINC 429 LINE RECEIVER
FEATURES
ARINC 429 to TTL/CMOS logic line receiver
Operates from single +5V ± 10% or 3.3V ± 10% power supply
ARINC inputs internally protected to lightning requirements of DO-160D Level A3
Operates in high noise environment
o
Input Common Voltage Range: ± 20V
o
2V minimum Input hysteresis
Logic level TEST inputs bypass analog inputs.
8 Lead SOIC.
Replacement for HI-8588 and HI-8588-10
TERMINAL DESCRIPTION
Table 1 Terminal Description
NAME
INA
DESCRIPTION
429 INPUT.
ARINC 429 format serial digital data
“A” input.
429 INPUT.
ARINC 429 format serial digital data
“B” input.
LOGIC INPUT.
Test input A.
LOGIC INPUT.
Test input B.
LOGIC OUTPUT.
CMOS/TTL format serial digital
data “A” output.
LOGIC OUTPUT.
CMOS/TTL format serial digital
data “B” output.
POWER INPUT.
5 VDC OR 3.3VDC.
POWER INPUT.
Ground.
INB
TESTA
TESTB
OUTA
OUTB
VDD
GND
©2009 Device Engineering Inc.
Page 1 of 8
DS-MW-01041-01 Rev H
10/28/2008
FUNCTIONAL DESCRIPTION
The DEI1041 is a BICMOS device which contains one ARINC 429 differential line receiver. It translates incoming ARINC
429 data bus signals (tri-level RZ bipolar differential modulation) to a pair of TTL/CMOS logic outputs. It meets the
requirements of the ARINC 429 Digital Information Transfer Standard. Refer to Figure 1 “ DEI1041 Block Diagram and
Truth Table”.
The device is designed to operate in a high noise environment. Inputs are accepted over a +/- 20V common mode voltage
range and the receivers provide over 2 Volts of hysteresis. Circuit speed is optimized to reject high frequency transients.
All ARINC input pins are designed with internal protection from damage due to transients meeting the lightning induced
transient requirements of DO-160D Level A3. The ARINC inputs may optionally be connected to ARINC bus through
external 10k ohm series resistors. These resistors may be added in combination with transient voltage suppressors to achieve
lighting protection beyond the Level A3 limits due to high input impedance.
The DEI1041 device provides logic level TEST inputs for built in system test. They force the receiver outputs to the specified
ZERO, ONE or NULL state. The ARINC inputs are ignored when the device is in test mode.
DEI1041 Block Diagram
Typical Channel
DEI1041 Truth Table
INPUTS
TEST INPUTS
(TTL/CMOS)
ARINC
INPUTS
OUTPUTS
TTL/CMOS
INA
OUTA
RESISTOR
NETWORK
AND
LIGHTNING
PROTECTION
TEST A TEST B A
IN
– B
IN
V
OUTPUT
AND
TEST
LOGIC
Comparators
OUT A OUT B Logic
1
0
0
0
1
0
0
1
0
1
0
0
ONE
ZERO
NULL
ZERO
ONE
NULL
INB
0
OUTB
0
0
0
1
0
1
>6.5v
<-6.5V
-2.5 to +2.5
X
X
X
0
0
0
1
1
TESTA
IINPUT
BUFFERS
TESTB
Figure 1 DEI1041 Block Diagram and Truth Table
ELECTRICAL DESCRIPTION
Table 2 Recommended Operating Conditions
PARAMETER
Supply Voltage
Logic Input Levels
Operating Temperature
-SES
-SMS
SYMBOL
Vdd
V
TESTA,B
Ta
CONDITIONS
+5V ± 10%
+3.3V ± 10%
0 to Vdd
-55 to +85°C
-55 to +125°C
©2009 Device Engineering Inc.
Page 2 of 8
DS-MW-01041-01 Rev H
10/28/2008
Table 3 Absolute Maximum Rating
PARAMETER
Supply Voltage (with respect to V
SS
)
Storage Temperature
Input Voltage, continuous (ARINC Inputs)
Input Voltage (Test Inputs)
Power Dissipation @ 85 °C
Junction Temperature:
MIN
-0.3
-65
-40
V
SS
– 0.3
MAX
7.0
+150
+40
V
DD
+0.3
500
145
UNITS
V
°C
V
V
mW
°C
o
Tjmax, (limited by molding compound Tg)
Peak Body Temperature,
Non-G Package
- G Package
Lightning Protection (ARINC 429 Channel Inputs and TESTA/TESTB Inputs)
Waveform 3*
Waveform 4 and 5*
*Per DO160D level 3A. See Figures 4-6.
-
-600
-300
240
260
+600
+300
C
V
V
ESD per
JEDEC A114-A Human Body Model
Stresses above these limits can cause permanent damage.
2000
V
Table 4 Electrical Characteristics
Conditions
: Temperature: -55°C to +85°C (SES) : -55°C to +125°C (SMS); V
DD
= +5V ± 10% or 3.3V ± 10%
PARAMETER
TEST CONDITION
SYMBOL
MIN
NOM
MAX
UNITS
ARINC INPUTS
V
A
– V
B
= Logic +1
V
A
– V
B
= Logic -1
V
A
– V
B
= Logic Null
Input Hysteresis
V
A
– V
B
= Null to +1 transition
V
A
– V
B
= +1 to Null transition
V
A
– V
B
= Null to -1 transition
V
A
– V
B
= -1 to Null transition
Input Common Mode
Voltage Range
Input Resistance
IN
A
to IN
B
Input Resistance
IN
A
or IN
B
to V
SS
Input Capacitance
IN
A
to IN
B
Input Capacitance
IN
A
or IN
B
to V
SS
OUTA = 1
OUTB = 1
OUTA = 0
OUTB = 0
V
+1
V
-1
V
NULL
V
HY
6.5
-6.5
-2.5
2.0
5.5
2.5
-6.5
-3.5
-20
140k
140k
10
-10
0
13
-13
2.5
V
V
V
V
V
V
V
V
V
4.0
6.5
3.5
-5.5
-2.5
OUTA = 0→1
OUTA = 1→0
OUTB = 0→1
OUTB = 1→0
Logic +1, Null, Logic -1
V
DD
open,
Shorted to V
SS
or +5V
V
DD
open,
Shorted to V
SS
or +5V
V
DD
open,
Shorted to V
SS
or +5V (1)
V
DD
open,
Shorted to V
SS
or +5V (1)
V
T+1+
V
T+1-
V
T-1+
V
T-1-
V
CM
R
IN
R
S
C
IN
C
S
+20
390K
390K
10
10
pF
pF
©2009 Device Engineering Inc.
Page 3 of 8
DS-MW-01041-01 Rev H
10/28/2008
Conditions
: Temperature: -55°C to +85°C (SES) : -55°C to +125°C (SMS); V
DD
= +5V ± 10% or 3.3V ± 10%
PARAMETER
TEST CONDITION
SYMBOL
MIN
NOM
MAX
UNITS
TEST INPUTS
Logic 0 Voltage
Logic 1 Voltage
Logic 0 Current
Logic 1 Current
V
IL
= 0.8
V
IL
V
IH
I
IL
V
IH
= 2.0
I
IH
LOGIC OUTPUTS
I
OH
= 5mA (5V Vdd)
V
OH
I
OH
= 1.5mA (3.3V Vdd)
TTL Compatible
I
OL
= 5mA (5V Vdd)
V
OL
I
OL
= 1.5mA (3.3V Vdd)
TTL Compatible
I
OH
= 100µA
V
OH
CMOS Compatible
I
OL
= 100µA
V
OH
CMOS Compatible
SUPPLY CURRENT
Data Rate = 0MHz,
A/BIN =open,
I
DD
A/BOUT=open,
Vdd = 5.5V or 3.63V
2.0
0.8
20
20
V
V
µA
µA
OUT A or OUT B
2.4
0.5
0.4
V
DD
50mV
V
SS
+
50mV
V
OUT A or OUT B
OUT A or OUT B
OUT A or OUT B
V
V
V
V
DD
Current
2.5
5
mA
Notes:
1. Guaranteed by design, not production tested.
2. Current flowing into device is positive. Current flowing out of device is negative. All voltages are with respect to
Ground unless otherwise noted.
Table 5 Switching Characteristics
PARAMETER
TEST CONDITION
SYMBOL
MAX
MAX
UNITS
Vdd 3.3V Vdd 5V
INA/B to OUT A/B Prop Delay
INA/B to OUT A/B Prop Delay
Matching of t
LH
and t
HL
OUT A/B rise time
OUT A/B fall time
TESTA/B to OUTA/B Prop
delay
TESTA/B to OUTA/B Prop
delay
10% to 90%, C
L
= 50pF
10% to 90%, C
L
= 50pF
C
L
= 50pF
C
L
= 50pF
TESTA = TESTB = 0
C
L
= 50pF
TESTA = TESTB = 0
C
L
= 50pF
t
LH
t
HL
Dtp
t
r
t
f
t
TOH
t
TOL
1000
1000
500
50
50
100
100
900
900
500
25
25
60
60
ns
ns
ns
ns
ns
ns
ns
©2009 Device Engineering Inc.
Page 4 of 8
DS-MW-01041-01 Rev H
10/28/2008
INA
Vdif = 6.5V
Vdif = 2.5V
V/I
Largest
Peak
25% to 75%
of Largest Peak
50%
INB
t
HL
t
LH
0
t
OUTA
OUTB
1.5V
1.5V
Figure 2 ARINC 429 Input to Logic Output Switching
Waveform
Figure 4 DO160D Lightning Induced Transient
Voltage Waveform #3.
Voc = 600V, Isc = 24A, Frequency =1MHz +-20%
V
Peak
TESTA OR B
1.5V
t
TOH
T1 = 6.4 us +-20%
T2 = 70us +-20%
t
TOL
50%
OUTA OR B
1.5V
0
T1
T2
t
Figure 3 TEST Input to Logic Output Switching
Waveform
Figure 5 DO160D Lightning Induced Transient
Voltage Waveform #4.
Voc = 300V, Isc = 60A
V/I
LIGHTNING TRANSIENT NOTES:
1. Voc = Peak Open Circuit Voltage available at the
calibration point.
2. Isc = Peak Short Circuit Current available at the
calibration point.
3. Amplitude tolerances: +10%, -0%.
4. The ratio of Voc to Isc is the generator source
impedance to be used for generating the
waveforms.
Peak
5A: T1 = 40us +-20%
T2 = 120us +-20%
5B: T1 = 50us +-20%
T2 = 500us +-20%
50%
0
Figure 6 DO160D Lightning Induced Transient
t
Voltage Waveform #5.
T1
T2
Voc = 300V, Isc = 300A
©2009 Device Engineering Inc.
Page 5 of 8
DS-MW-01041-01 Rev H
10/28/2008
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参数对比
与DEI1041-SES相近的元器件有:DEI1041-SMB、DEI1041-SMS。描述及对比如下:
型号 DEI1041-SES DEI1041-SMB DEI1041-SMS
描述 Line Receiver, 1 Func, 1 Rcvr, BICMOS, PDSO8, PLASTIC, MS-012AC, SOIC-8 Line Receiver, 1 Func, 1 Rcvr, BICMOS, PDSO8, PLASTIC, MS-012AC, SOIC-8 Line Receiver, 1 Func, 1 Rcvr, BICMOS, PDSO8, PLASTIC, MS-012AC, SOIC-8
是否无铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合
零件包装代码 SOIC SOIC SOIC
包装说明 SOP, SOP, SOP,
针数 8 8 8
Reach Compliance Code compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99
其他特性 ALSO OPERATES ON 5 VOLT SUPPLY ALSO OPERATES ON 5 VOLT SUPPLY ALSO OPERATES ON 5 VOLT SUPPLY
输入特性 DIFFERENTIAL SCHMITT TRIGGER DIFFERENTIAL SCHMITT TRIGGER DIFFERENTIAL SCHMITT TRIGGER
接口集成电路类型 LINE RECEIVER LINE RECEIVER LINE RECEIVER
接口标准 ARINC 429 ARINC 429 ARINC 429
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
JESD-609代码 e0 e0 e0
长度 4.9022 mm 4.9022 mm 4.9022 mm
湿度敏感等级 1 1 1
功能数量 1 1 1
端子数量 8 8 8
最高工作温度 85 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP SOP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 240 240 240
认证状态 Not Qualified Not Qualified Not Qualified
最大接收延迟 1000 ns 1000 ns 1000 ns
接收器位数 1 1 1
座面最大高度 1.7526 mm 1.7526 mm 1.7526 mm
最大供电电压 3.63 V 3.63 V 3.63 V
最小供电电压 2.97 V 2.97 V 2.97 V
标称供电电压 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES
技术 BICMOS BICMOS BICMOS
温度等级 OTHER MILITARY MILITARY
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING GULL WING GULL WING
端子节距 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 30 30
宽度 3.9116 mm 3.9116 mm 3.9116 mm
Base Number Matches 1 1 1
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