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DF2S62CTL3F

ESD Suppressors / TVS Diodes TVS AVAL DIODE SMT

器件类别:电路保护   

厂商名称:Toshiba(东芝)

厂商官网:http://toshiba-semicon-storage.com/

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器件参数
参数名称
属性值
产品种类
Product Category
ESD Suppressors / TVS Diodes
制造商
Manufacturer
Toshiba(东芝)
RoHS
Details
封装 / 箱体
Package / Case
CST-2
系列
Packaging
Cut Tape
系列
Packaging
Reel
工厂包装数量
Factory Pack Quantity
10000
文档预览
DF2S6.2CT
ESD Protection Diodes
Silicon Epitaxial Planar
DF2S6.2CT
1. Applications
ESD Protection
This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
Note:
2. Packaging and Internal Circuit
1: Cathode
2: Anode
CST2
25
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
Junction temperature
Storage temperature
Symbol
V
ESD
T
j
T
stg
Rating
±30
150
-55 to 150
Unit
kV
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1
2004-08
2014-04-15
Rev.4.0
DF2S6.2CT
4. Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
25
V
RWM
: Working peak reverse
voltage
V
BR
: Reverse breakdown voltage
I
BR
: Reverse breakdown current
I
R
: Reverse current
V
C
: Clamp voltage
I
PP
: Peak pulse current
R
DYN
: Dynamic resistance
Fig. 4.1 Definitions of Electrical Characteristics
Characteristics
Zener voltage
Dynamic impedance
Reverse current
Total capacitance
Symbol
V
Z
Z
Z
I
R
C
t
Note
I
Z
= 5 mA
I
Z
= 5 mA
V
R
= 5 V
Test Condition
Min
5.8
Typ.
6.2
32
Max
6.6
30
2.5
Unit
V
µA
pF
V
R
= 0 V, f = 1 MHz
5. Guaranteed ESD Protection (Note)
Test Condition
IEC61000-4-2 (Contact discharge)
ESD Protection
±30
kV
Note:
Criterion: No damage to devices.
2
2014-04-15
Rev.4.0
DF2S6.2CT
6. Marking
Fig. 6.1 Marking
Marking Code
YD
Part Number
DF2S6.2CT
7. Land Pattern Dimensions (for reference only)
Fig. 7.1 Land Pattern Dimensions (Unit: mm)
3
2014-04-15
Rev.4.0
DF2S6.2CT
8. Characteristics Curves (Note)
Fig. 8.1 I
Z
- V
Z
Fig. 8.2 I
R
- V
R
Fig. 8.3 C
t
- V
R
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
4
2014-04-15
Rev.4.0
DF2S6.2CT
Package Dimensions
Unit: mm
Weight: 0.7 mg (typ.)
Package Name(s)
TOSHIBA: 1-1P1S
Nickname: CST2
5
2014-04-15
Rev.4.0
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